Photomicrosensor EE-SG3/EE-SG3-B (Transmissive) Dimensions Note: Features All units are in millimeters unless otherwise indicated. • Dust-proof model with a 3.6 mm wide slot. • Solder terminal model (EE-SG3). • PCB terminal model (EE-SG3-B). 13 19±0.1 25.4±0.2 Two, 3.2 dia. holes Absolute Maximum Ratings (Ta = 25°C) 3.6±0.2 Item Symbol Rated value Optical axis Emitter 1.2 Four, 0.5 Four, 0.25 7.62±0.3 2.54±0.3 0.8 Four, 1.5 2.54 0.6 Cross section AA Detector Cross section AA IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector--Emitter voltage VCEO 30 V Emitter--Collector voltage VECO --- Collector current IC Internal Circuit K C A E Terminal No. A K C E Forward current Name Anode Cathode Collector Emitter Dimensions Collector dissipation PC 100 mW (see note 1) Operating Topr --25°C to 85°C Storage Tstg --30°C to 100°C Soldering temperature Tsol 260°C (see note 3) Ambient temperature Unless otherwise specified, the tolerances are as shown below. Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 20 mA Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Ordering Information Description Part number Photomicrosensor (Transmissive ( ) EE-SG3 EE-SG3-B Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 µA typ., 10 µA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 2 mA min., 40 mA max. IF = 15 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 ℓx Leakage current ILEAK --- --- Collector--Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 30 mA, IL = 1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Emitter Detector EE-SG3/EE-SG3-B EE-SG3/EE-SG3-B Engineering Data Ta = 25°C VCE = 10 V Ambient temperature Ta (°C) Light Current vs. Collector--Emitter Voltage Characteristics (Typical) IF = 15 mA IF = 10 mA IF = 5 mA Collector--Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 ℓx IF = 20 mA VCE = 5 V Sensing Position Characteristics (Typical) Relative light current I L (%) Response time tr, tf (µ s) Ta = 70°C Ambient temperature Ta (°C) Ambient temperature Ta (°C) Vcc = 5 V Ta = 25°C Load resistance RL (kΩ) Ta = 25°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current I L (%) Light current I L (mA) IF = 20 mA Ta = --30°C Forward voltage VF (V) Ta = 25°C IF = 25 mA Light current I L (mA) Pc Light Current vs. Forward Current Characteristics (Typical) Dark current I D (nA) Collector dissipation Pc (mW) Forward current I F (mA) IF Forward Current vs. Forward Voltage Characteristics (Typical) Forward current I F (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Response Time Measurement Circuit Input Output 90 % 10 % Input Output Distance d (mm) NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4. R OMRON ELECTRONICS LLC OMRON CANADA, INC. OMRON ON–LINE One East Commerce Drive Schaumburg, IL 60173 885 Milner Avenue Toronto, Ontario M1B 5V8 847–882–2288 416-286-6465 Global – http://www.omron.com USA – http://www.omron.com/oei Canada – http://www.omron.com/oci Cat. No. GC NAPMS–1 02/03 Specifications subject to change without notice. Printed in U.S.A.