ONSEMI NLAS325US

NLAS325
Dual SPST Analog Switch,
Low Voltage, Single Supply
The NLAS325 is a dual SPST (Single Pole, Single Throw) switch,
similar to 1/2 a standard 4066. The device permits the independent
selection of 2 analog/digital signals. Available in the Ultra–Small 8
package.
The use of advanced 0.6 µ CMOS process, improves the RON
resistance considerably compared to older higher voltage
technologies.
•
•
•
•
•
•
•
•
•
•
•
On Resistance is 20 Ω Typical at 5.0 V
Matching is < 1 Ω Between Sections
2 – 6 V Operating Range
Ultra Low < 5 pC Charge Injection
Ultra Low Leakage < 1 nA at 5.0 V, 25 C
Wide Bandwidth > 200 MHz, –3 dB
CMOS/TTL Compatible
2000 V ESD (HBM)
Ron Flatness +/– 6 Ω at 5.0 V
US8 Package
Independent Enables; One Positive, One Negative
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MARKING
DIAGRAM
8
8
1
L7
US8
US SUFFIX
CASE 493
D
1
L7 = Device Code
D = Date Code
PIN ASSIGNMENT
1
NO1
COM1
1
8
2
7
VCC
IN1
IN2
3
6
COM2
GND
4
5
NC2
NO1
2
COM1
3
IN2
4
GND
5
NC2
6
COM2
7
IN1
8
VCC
FUNCTION TABLE
Figure 1. Pinout
On/Off
Enable Input
Analog
Switch 1
Analog
Switch 2
L
H
Off
On
On
Off
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
 Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 2
1
Publication Order Number:
NLAS325/D
NLAS325
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
0.5 to 7.0
V
VI
DC Input Voltage
0.5 to 7.0
V
VO
DC Output Voltage
0.5 to 7.0
V
IIK
DC Input Diode Current
VI < GND
50
mA
IOK
DC Output Diode Current
VO < GND
50
mA
IO
DC Output Sink Current
50
mA
ICC
DC Supply Current per Supply Pin
100
mA
IGND
DC Ground Current per Ground Pin
100
mA
TSTG
Storage Temperature Range
65 to 150
C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
TJ
Junction Temperature under Bias
JA
Thermal Resistance
PD
Power Dissipation in Still Air at 85C
MSL
Moisture Sensitivity
FR
Flammability Rating
VESD
ESD Withstand Voltage
(Note 1)
260
C
150
C
250
C/W
250
mW
Level 1
Oxygen Index: 28 to 34
UL 94 V–0 @ 0.125 in
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
2.0
5.5
V
VCC
DC Supply Voltage
VIN
Digital Select Input Voltage
GND
5.5
V
VIS
Analog Input Voltage (NC, NO, COM)
GND
VCC
V
TA
Operating Temperature Range
55
125
C
tr, tf
Input Rise or Fall Time, SELECT
0
0
100
20
ns/V
VCC = 3.3 V 0.3 V
VCC = 5.0 V 0.5 V
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80C
117.8
419,300
TJ = 90C
1,032,200
90
TJ = 100C
80
TJ = 110C
Time, Years
TJ = 120C
Time, Hours
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 130C
Junction
Temperature °C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 2. Failure Rate vs. Time Junction Temperature
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2
NLAS325
DC CHARACTERISTICS – Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol
VIH
VIL
Parameter
Condition
Minimum High–Level Input
Voltage, Select Inputs
Maximum Low–Level Input
Voltage, Select Inputs
IIN
Maximum Input Leakage
Current, Select Inputs
VIN = 5.5 V or GND
ICC
Maximum Quiescent Supply
Current
Select and VIS = VCC or GND
VCC
55C to 25C
85C
125C
Unit
2.0
1.5
1.5
1.5
V
2.5
1.9
1.9
1.9
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
5.5
3.85
3.85
3.85
2.0
0.5
0.5
0.5
2.5
0.6
0.6
0.6
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
V
5.5
1.65
1.65
1.65
0 V to 5.5 V
0.2
2.0
2.0
A
5.5
4.0
4.0
8.0
A
DC ELECTRICAL CHARACTERISTICS – Analog Section
Guaranteed Limit
Symbol
RON
Parameter
Maximum “ON” Resistance
(Figures 16 – 22)
Condition
VIN = VIL or VIH
VIS = GND to VCC
IINI 10.0 mA
VCC
55C to 25C
85C
125C
Unit
2.5
85
95
105
3.0
45
50
55
4.5
30
35
40
5.5
25
30
35
RFLAT (ON)
ON Resistance Flatness
(Figures 16 – 22)
VIN = VIL or VIH
IINI 10.0 mA
VIS = 1 V, 2 V, 3.5 V
4.5
4
4
5
INC(OFF)
INO(OFF)
NO or NC Off Leakage
Current (Figure 8)
VIN = VIL or VIH
VNO or VNC = 1.0 VCOM 4.5 V
5.5
1
10
100
nA
ICOM(ON)
COM ON Leakage Current
(Figure 8)
VIN = VIL or VIH
VNO 1.0 V or 4.5 V with VNC
floating or
VNO 1.0 V or 4.5 V with VNO
floating
VCOM = 1.0 V or 4.5 V
5.5
1
10
100
nA
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3
NLAS325
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Maximum Limit
Symbol
tON
tOFF
tBBM
Turn–On Time
(Figures 11 and 12)
Turn–Off Time
(Figures 11 and 12)
Minimum Break–Before–Make
Time
55C to 25C
85C
125C
VCC
VIS
Test Conditions
(V)
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
RL = 300 CL = 35 pF
(Figures 4 and 5)
2.5
2.0
5
23
35
5
38
5
41
ns
3.0
2.0
5
16
24
5
27
5
30
4.5
3.0
2
11
16
2
19
2
22
5.5
3.0
2
9
14
2
17
2
20
2.5
2.0
1
7
12
1
15
1
18
3.0
2.0
1
5
10
1
13
1
16
4.5
3.0
1
4
6
1
9
1
12
5.5
3.0
1
3
5
1
8
1
11
2.5
2.0
1
12
1
1
3.0
2.0
1
11
1
1
4.5
3.0
1
6
1
1
5.5
3.0
1
5
1
1
Parameter
RL = 300 CL = 35 pF
(Figures 4 and 5)
VIS = 3.0 V (Figure 3)
RL = 300 CL = 35 pF
ns
ns
*Typical Characteristics are at 25C.
Typical @ 25, VCC = 5.0 V
CIN
CNO or CNC
CCOM
C(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8
pF
10
10
20
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
BW
VONL
VISO
Q
THD
VCT
Parameter
Condition
VCC
Typical
V
25°C
Unit
MHz
Maximum On–Channel –3dB
Bandwidth or Minimum Frequency
Response (Figure 10)
VIN = 0 dBm
VIN centered between VCC and GND
(Figure 6)
3.0
145
4.5
170
5.5
175
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND
(Figure 6)
3.0
2
4.5
2
5.5
2
f = 100 kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 6)
3.0
93
4.5
93
5.5
93
3.0
1.5
5.5
3.0
5.5
0.1
5.5
90
3.0
90
Off–Channel Isolation (Figure 9)
Charge Injection Select Input to
Common I/O (Figure 14)
VIN = VCC to GND, FIS = 20 kHz
tr = tf = 3 ns
RIS = 0 , CL = 1000 pF
Q = CL * VOUT
(Figure 7)
Total Harmonic Distortion THD +
Noise (Figure 13)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF
VIS = 5.0 VPP sine wave
Channel–to–Channel Crosstalk
f = 100 kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 6)
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4
dB
dB
pC
%
dB
NLAS325
VCC
DUT
VCC
Input
Output
GND
VOUT
0.1 F
300 Ω
tBMM
35 pF
90% of VOH
90%
Output
Switch Select Pin
GND
Figure 3. tBBM (Time Break–Before–Make)
VCC
DUT
VCC
0.1 F
50%
Input
Output
VOUT
Open
50%
0V
300 Ω
VOH
90%
35 pF
90%
Output
VOL
Input
tON
tOFF
Figure 4. tON/tOFF
VCC
VCC
50%
Input
DUT
Output
0V
300 Ω
VOUT
Open
50%
VOH
35 pF
Output
Input
tOFF
Figure 5. tON/tOFF
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5
10%
10%
VOL
tON
NLAS325
50 Ω
DUT
Reference
Transmitted
Input
Output
50 Ω Generator
50 Ω
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction.
VVOUT
for VIN at 100 kHz
IN
VOUT
for VIN at 100 kHz to 50 MHz
VONL = On Channel Loss = 20 Log VIN
VISO = Off Channel Isolation = 20 Log
Bandwidth (BW) = the frequency 3 dB below VONL
VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
VCC
VIN
Output
Open
GND
CL
Output
Off
On
VIN
Figure 7. Charge Injection: (Q)
100
LEAKAGE (nA)
10
1
ICOM(ON)
0.1
ICOM(OFF)
0.01
VCC = 5.0 V
INO(OFF)
0.001
–55
–20
25
70
85
TEMPERATURE (°C)
Figure 8. Switch Leakage vs. Temperature
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6
125
Off
∆VOUT
NLAS325
+15
0
1.0
2.0
–20
+10
Bandwidth
(ON–RESPONSE)
+5
3.0
0
PHASE SHIFT
4.0
–40
(dB)
(dB)
Off Isolation
–60
VCC = 5.0 V
TA = 25C
–80
–100
0.01
0.1
–10
6.0
–15
7.0
–20
8.0
–25
9.0
10.0
0.01
100 200
1
10
FREQUENCY (MHz)
–5
5.0
PHASE (°)
0
VCC = 5.0 V
TA = 25°C
–30
0.1
1
–35
100 300
10
FREQUENCY (MHz)
Figure 9. Off–Channel Isolation
Figure 10. Typical Bandwidth and Phase Shift
30
30
25
25
20
20
TIME (ns)
TIME (ns)
VCC = 4.5 V
15
tON (ns)
10
tOFF (ns)
5
0
2.5
3
3.5
4
4.5
10
tON
5
tOFF
0
–55
5
–40
85
25
125
VCC (VOLTS)
Temperature (°C)
Figure 11. tON and tOFF vs. VCC at 25C
Figure 12. tON and tOFF vs. Temp
1
3.0
VINpp = 3.0 V
VCC = 3.6 V
2.5
2.0
Q (pC)
THD + NOISE (%)
15
0.1
VINpp = 5.0 V
VCC = 5.5 V
VCC = 5 V
1.5
1.0
0.5
VCC = 3 V
0
–0.5
0.01
1
10
100
0
1
2
3
4
FREQUENCY (kHz)
VCOM (V)
Figure 13. Total Harmonic Distortion
Plus Noise vs. Frequency
Figure 14. Charge Injection vs. COM Voltage
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7
5
NLAS325
100
100
VCC = 2.0 V
10
80
RON (Ω)
ICC (nA)
1
0.1
0.01
60
VCC = 2.5 V
40
VCC = 3.0 V
0.001
VCC = 3.0 V
VCC = 4.0 V
20
0.0001
VCC = 5.0 V
0.00001
–40
–20
0
20
60
VCC = 5.5 V
80
100
0
0.0
120
3.0
4.0
5.0
VIS (VDC)
Figure 15. ICC vs. Temp, VCC = 3 V & 5 V
Figure 16. RON vs. VCC, Temp = 25C
90
90
80
80
70
70
60
60
RON (Ω)
100
RON (Ω)
2.0
Temperature (°C)
100
50
40
125°C
30
20
40
25°C
–55°C
10
85°C
0.5
50
20
–55°C
10
6.0
30
25°C
0
0.0
1.0
1.0
1.5
2.0
0
0.0
2.5
85°C
125°C
0.5
1.0
1.5
VIS (VDC)
2.0
2.5
3.0
VIS (VDC)
Figure 17. RON vs Temp, VCC = 2.0 V
Figure 18. RON vs. Temp, VCC = 2.5 V
50
30
45
25
40
20
30
RON (Ω)
RON (Ω)
35
25
20
125°C
10
15
0
0.0
25°C
85°C
10
5
15
5
25°C
85°C
125°C
–55°C
–55°C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VIS (VDC)
VIS (VDC)
Figure 20. RON vs. Temp, VCC = 4.5 V
Figure 19. RON vs. Temp, VCC = 3.0 V
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8
4.5
NLAS325
25
25
125°C
20
20
RON (Ω)
RON (Ω)
125°C
15
25°C
10
–55°C
85°C
25°C
10
–55°C
85°C
5
0
0.0
15
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
5.0
VIS (VDC)
VIS (VDC)
Figure 21. RON vs. Temp, VCC = 5.0 V
Figure 22. RON vs. Temp, VCC = 5.5 V
DEVICE ORDERING INFORMATION
Device Nomenclature
Device
Order Number
Circuit
Indicator
Technology
Device
Function
Package
Suffix
Package Type
Tape and
Reel Size
NL
AS
325
US
US8
178 mm (7″)
3000 Unit
NLAS325US
CAVITY
TAPE
TOP TAPE
TAPE TRAILER
(Connected to Reel Hub)
NO COMPONENTS
160 mm MIN
COMPONENTS
TAPE LEADER
NO COMPONENTS
400 mm MIN
DIRECTION OF FEED
Figure 23. Tape Ends for Finished Goods
TAPE DIMENSIONS mm
4.00
1.50 TYP
4.00
2.00
1.75
3.50 0.25
0.30
8.00 +
– 0.10
1
1.00 ± 0.25 TYP
DIRECTION OF FEED
Figure 24. US8 Reel Configuration/Orientation
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9
NLAS325
t MAX
1.5 mm MIN
(0.06 in)
A
13.0 mm 0.2 mm
(0.512 in 0.008 in)
50 mm MIN
(1.969 in)
20.2 mm MIN
(0.795 in)
FULL RADIUS
G
Figure 25. Reel Dimensions
REEL DIMENSIONS
Tape Size
T and R Suffix
A Max
G
t Max
8 mm
US
178 mm
(7 in)
8.4 mm, + 1.5 mm, –0.0
(0.33 in + 0.059 in, –0.00)
14.4 mm
(0.56 in)
DIRECTION OF FEED
BARCODE LABEL
POCKET
Figure 26. Reel Winding Direction
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10
HOLE
NLAS325
PACKAGE DIMENSIONS
US8
US SUFFIX
CASE 493–01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION A" DOES NOT INCLUDE MOLD
FLASH, PROTRUSION OR GATE BURR. MOLD
FLASH. PROTRUSION AND GATE BURR SHALL
NOT EXCEED 0.140 MM (0.0055") PER SIDE.
4. DIMENSION B" DOES NOT INCLUDE
INTER-LEAD FLASH OR PROTRUSION.
INTER-LEAD FLASH AND PROTRUSION SHALL
NOT E3XCEED 0.140 (0.0055") PER SIDE.
5. LEAD FINISH IS SOLDER PLATING WITH
THICKNESS OF 0.0076-0. 0203 MM. (300-800
INCH).
6. ALL TOLERANCE UNLESS OTHERWISE
SPECIFIED ±0.0508 (0.0002").
–X–
A
8
J
–Y–
5
DETAIL E
B
L
1
4
R
S
G
P
U
C
–T–
SEATING
PLANE
H
0.10 (0.004) T
K
D
N
0.10 (0.004)
M
T X Y
R 0.10 TYP
V
M
F
DETAIL E
3.8
0.5 TYP
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
1.8 TYP
1.0
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11
0.3 TYP
(mm)
DIM
A
B
C
D
F
G
H
J
K
L
M
N
P
R
S
U
V
MILLIMETERS
MIN
MAX
1.90
2.10
2.20
2.40
0.60
0.90
0.17
0.25
0.20
0.35
0.50 BSC
0.40 REF
0.10
0.18
0.00
0.10
3.00
3.20
0
6
5
10 0.28
0.44
0.23
0.33
0.37
0.47
0.60
0.80
0.12 BSC
INCHES
MIN
MAX
0.075
0.083
0.087
0.094
0.024
0.035
0.007
0.010
0.008
0.014
0.020 BSC
0.016 REF
0.004
0.007
0.000
0.004
0.118
0.126
0
6
5
10 0.011
0.017
0.009
0.013
0.015
0.019
0.024
0.031
0.005 BSC
NLAS325
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
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NLAS325/D