NUP5120X6 5−Line Transient Voltage Suppressor Array This 5−line voltage transient suppressor array is designed for application requiring transient voltage protection capability. It is intended for use in over−transient voltage and ESD sensitive equipment such as cell phones, portables, computers, printers and other applications. This device features a monolithic common anode design which protects five independent lines in a single SOT−563 package. http://onsemi.com SOT−563 5−LINE TRANSIENT VOLTAGE SUPPRESSOR Features • Protects up to 5 Lines in a Single SOT−563 Package • ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model • • PIN ASSIGNMENT and Class C (Exceeding 400 V) per Machine Model. Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact) This is a Pb−Free Device 1 6 2 5 3 4 Applications • Hand Held Portable Applications • Serial and Parallel Ports • Notebooks, Desktops, Servers PIN 1. 2. 3. 4. 5. 6. CATHODE ANODE CATHODE CATHODE CATHODE CATHODE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK 1 Rating Peak Power Dissipation 8x20 msec double exponential waveform, (Note 1) Value Unit 90 W MARKING DIAGRAM 6 TJ Operating Junction Temperature Range −40 to 125 °C TSTG Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature – Maximum (10 seconds) 260 °C ESD Human Body Model (HBM) Machine Model (MM) IEC 61000−4−2 Air (ESD) IEC 61000−4−2 Contact (ESD) 16000 400 15000 8000 V 54 3 12 SOT−563 CASE 463A STYLE 6 RN MG G RN = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse per Figure 1. Device Package Shipping † NUP5120X6T1G SOT−563 (Pb−Free) 4000/Tape & Reel NUP5120X6T2G SOT−563 (Pb−Free) 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. 4 1 Publication Order Number: NUP5120/D NUP5120X6 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA, (Note 3) Reverse Leakage Current Capacitance Symbol Min VRWM Typ Max Unit − 5.0 V VBR 6.2 6.8 7.2 V VRWM = 3 V IR − 0.01 0.5 mA VR = 0 V, f = 1 MHz (Line to GND) VR = 2.5 V, f = 1 MHz (Line to GND) CJ − 54 70 pF 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. http://onsemi.com 2 NUP5120X6 120 1000 PEAK POWER (W) % OF RATED POWER OR IPP TA = 25 °C 100 80 60 40 100 20 0 0 25 50 75 100 125 10 150 Figure 1. Power Derating vs. Ambient Temperature Figure 2. Peak Power vs. Pulse Duration 60 CT, TYPICAL CAPACITANCE (pF) IPP, PEAK CURRENT (A) TA = 25 °C 10 1 6 8 10 12 14 TA = 25 °C 50 40 30 20 10 0 16 0 1 3 4 5 VR, REVERSE VOLTAGE (V) Figure 3. Peak Current vs. Clamp Voltage Figure 4. Typical Capacitance vs. Reverse Voltage 6 1 TA = 25 °C FORWARD CURRENT (A) TA = 25 °C REVERSE CURRENT (nA) 2 VCL, CLAMP VOLTAGE (V) 1000 100 TJ = 125 °C 10 TJ = 25 °C 1 0.1 0.01 100 10 PULSE DURATION (μS) 100 0.1 1 TA, AMBIENT TEMPERATURE (°C) 1 2 3 4 5 TJ = 125 °C 0.1 TJ = 25 °C 0.01 0.001 0.6 6 0.7 0.8 0.9 1.0 1.1 1.2 REVERSE VOLTAGE (V) FORWARD VOLTAGE (V) Figure 5. Reverse Current vs. Reverse Voltage Figure 6. Typical Forward Current vs. Forward Voltage http://onsemi.com 3 NUP5120X6 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE B A −X− 6 5 1 G 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C K 4 3 B −Y− DIM A B C D G J K S S D 65 PL 0.08 (0.003) J M X Y MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE SOLDERING FOOTPRINT 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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