PJD15N06L 60V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), [email protected],[email protected]=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 15N06L Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 60 V G a t e - S o ur c e Vo l t a g e V GS +20 V ID 15 A ID M 60 A PD 38 22 W T J , T S TG -5 5 to + 1 5 0 Avalanche Energy with Single Pulse ID=21A, VDD=30V, L=0.5mH E AS 120 Junction-to-Case Thermal Resistance RθJC 3 .3 O C /W Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 50 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T A = 2 5 OC T A = 7 5 OC O C mJ Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJD15N06L ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 2 5 0 u A 60 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, ID=8.0A - 36 50 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, ID=10A - 32 40 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=60V, VGS=0V - - 1 uA Gate Body Leakage IG S S V GS = + 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 0 V , ID = 1 0 A 20 - - S V D S = 3 0 V , ID = 1 0 A , V G S = 5 V - 1 7 .2 0 - - 3 2 .5 - - 3 .6 - S ta ti c mΩ D ynami c To t a l G a t e C h a r g e Qg nC V D S = 3 0 V , ID = 1 0 A V GS = 1 0 V G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd - 5 .4 - Tu r n - O n D e l a y Ti m e T d ( o n) - 13.2 16.5 - 5.8 7.6 - 42 55 Tu r n - O n R i s e Ti m e t rr Tu r n - O f f D e l a y Ti m e VDD=30V , RL=30Ω ID=1A , VGEN=10V RG=3.6Ω t d (o ff) ns Tu r n - O f f F a l l Ti m e tf - 6 .2 7 .8 In p u t C a p a c i t a n c e C iss - 1750 - O ut p ut C a p a c i t a nc e C oss - 130 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - 80 - V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 10 A V SD IS = 1 0 A , V G S = 0 V - 0 .9 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJD15N06L O 50 50 VGS=10V, 6.0V, 5.0V, 4.5V, 4.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves (TA=25 C,unless otherwise noted) 40 3.5V 30 3.0V 20 10 2.5V V DS=10V 40 30 20 T J=125 OC 0 T J=25 OC 0 0 1 2 3 4 5 1.5 Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) 3 3.5 4 4.5 5 5.5 120 70 60 50 V GS=4.5V 40 V GS=10V 30 20 10 ID =10A 100 80 o O T J125 =125 C C 60 40 TJJ =25 =25oOCC T 20 0 0 10 20 30 40 50 ID - Drain Current (A) FIG.3- On Resistance vs Drain Current RDS(ON) - On-Resistance(Normalized) 2.5 FIG.2- Transfer Characteristic 80 1.7 2 V GS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 1.9 T J=-55 OC 10 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) FIG.4- On Resistance vs Gate to Source Voltage V GS=10V I D=10A 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature (oC) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 PAGE . 3 VGS - Gate-to-Source Voltage (V) PJD15N06L Vgs Qg Qsw Vgs(th) 10 V DS =30V I D =10A 8 6 4 2 0 0 Qg(th) Qgs 5 I D =250uA 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) IS - Source Current (A) 25 30 35 73 125 150 I D =250uA 71 69 67 65 63 61 59 -50 -25 0 25 50 75 100 o TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature 100 20 Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) Fig.6 - Gate Charge Waveform 1.3 15 Qg - Gate Charge (nC) Qg Qgd 10 Fig.9 - Breakdown Voltage vs Junction Temperature V GS =0V 10 T J =125 OC 1 T J =25 OC T J =-55 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4