BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120(3.04) • RDS(ON), [email protected],IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition 0.056(1.40) • Specially Designed for Battery Operated Systems, Solid-State Relays 0.047(1.20) Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) 0.044(1.10) 0.004(0.10)MAX. 0.035(0.90) • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 0.020(0.50) 0.013(0.35) • Marking : 138 • Apporx. Weight: 0.0003 ounce, 0.0084 gram Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l L i mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 50 V Ga te - S o ur c e Vo lta g e V GS +20 V ID 300 mA ID M 2000 mA PD 350 210 mW T J ,T S TG - 5 5 to + 1 5 0 R θJ A 357 C o nti nuo us D r a i n C ur r e nt P uls e d D r a i n C ur r e nt 1) TA = 2 5 OC TA = 7 5 OC Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e M a xi m um P o we r D i s s i p a ti o n Junction-to Ambient Thermal Resistance(PCB mounted)2 O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE October 26,2010-REV.00 PAGE . 1 BSS138 ELECTRICALCHARACTERISTICS P a r a m e te r S ym b o l Te s t C o nd i ti o n M i n. Typ . M a x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V , ID =1 0 μ A 50 - - V G a te Thr e s ho ld Vo lta g e V GS ( th) V D S =V GS , ID = 2 5 0 μ A 0 .8 - 1 .5 V R D S ( o n) VGS=2.5V , I D=100mA - 2 .8 6 .0 R D S ( o n) VGS=4.5V , I D=200mA - 1 .8 4 .0 R D S ( o n) VGS=10V , I D=500mA - 1.6 3.0 ID S S VDS=50V , VGS=0V - - 1 μA Gate Body Leakage IGS S V GS =+ 2 0 V , V D S =0 V - - +1 0 μA Forward Transconductance g fS V D S =1 0 V , ID =2 5 0 m A 100 - - mS To ta l Ga te C ha r g e Qg V D S =2 5 V, ID =2 5 0 m A VGS=4.5V - - 1 .0 nC Tur n- On Ti m e ton - - 40 Tur n- Off Ti m e t o ff - - 150 Inp ut C a p a c i ta nc e C i ss - - 50 O utp ut C a p a c i ta nc e C oss - - 10 Re ve r s e Tra ns fe r C a p a c i ta nc e C rss - - 5 S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze r o Ga te Vo lta g e D ra i n C ur re nt Ω Dynamic VDD=30V , RL=100Ω ID=300mA , VGEN=10V RG=6Ω V D S =2 5 V , V GS =0 V f=1 .0 M H Z ns pF S o urc e - D r a i n D i o d e D i o d e F o rwa r d Vo lta g e C o nti nuo us D i o d e F o r wa r d C ur re nt P uls e D i o d e F o rwa r d C ur re nt Switching Test Circuit V SD IS=250mA , VGS=0V - 0.82 1.2 V IS - - - 300 mA IS M - - - 2000 mA Gate Charge Test Circuit VDD VIN RL VDD VGS RL VOUT RG 1mA RG October 26,2010-REV.00 PAGE . 2 BSS138 O Typical Characteristics Curves (TA=25 C,unless otherwise noted) 1 I D-Drain-to-Source Current (A) 1.2 I D-Drain-to-Source Current (A) V GS=10V~4.0V 1.0 0.8 3.0V 0.6 0.4 0.2 0 0 1 2 3 4 VDS =10V 0.8 0.6 0.4 o TJ = 25 C 0.2 0 0 5 V DS- Drain-to-Source Voltage (V) 3 4 5 6 FIG.2- Transfer Characteristic 5 5 R DS(ON) - On Resistance ( W ) R DS(ON) - On Resistance ( W ) 2 V GS- Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 4 3 V GS=4.5V 2 V GS=10V 1 4 3 I D =200mA 2 I D =500mA 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) I D - Drain Current (A) FIG.3- On Resistance vs Drain Current R DS(ON) -On-Resistance(Normalized) 1 FIG.4- On Resistance vs Gate to Source Voltage 1.8 1.6 VGS =10 V ID =500mA 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 O T J - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature October 26,2010-REV.00 PAGE . 3 10 1 V GS= 0V I D =250mA 8 I S - Source Current (A) V GS - Gate-to-Source Voltage(V) BSS138 6 4 2 0 T J = 125 OC 0.1 T J =-55 OC 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0.2 Fig.6 - Gate Charge Waveform I D = 250 m A 1.1 1.0 0.9 0.8 -25 0 25 50 75 100 125 150 O T J - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature October 26,2010-REV.00 0.6 0.8 1 1.2 1.4 Fig.7 Source-Drain Diode Forward Voltage BV DSS - Breakdown Voltage(Normlized) 1.2 0.7 -50 0.4 V SD - Source-to-Drain Voltage (V) Q g - Gate Charge (nC) V th - G-S Threshold Voltage(Normalized) T J =25 OC 1.2 I D = 250 m A 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 150 T J - Junction Temperature ( OC) Fig.9 - Breakdown Voltage vs Junction Temperature PAGE . 4 BSS138 MOUNTING PAD LAYOUT SOT-23 ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. October 26,2010-REV.00 PAGE . 5