K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Revision History Draft Date Remark - Initial Document Dec. 2001 Advance - Absolute maximum ratings are changed VDD : 2.815 - > 3.13 VDDQ : 2.815 - > 2.4 VTERM : 2.815 - > VDDQ+0.5 (2.4V MAX) Oct. 2002 Advance Rev. No. History Rev. 0.0 Rev. 0.1 - Recommended DC operating conditions are changed VREF / VCM-CLK : 0.68 - > 0.6, 0.95 - > 0.9 - DC characteristics is changed ISBZZ : 150 - > 128 - AC Characteristics are changed TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.5 / 0.5 - > 0.3 / 0.3 / 0.3 TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.5 / 0.5 - > 0.5 / 0.6 / 0.6 Rev. 0.2 - Recommended DC operating condition is changed Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6 Jan. 2003 Advance Rev. 0.3 - Correct typo VDD -> VDDQ: in MODE CONTROL at page4 Sep. 2003 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters. -1- Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM 512Kx36 & 1Mx18 Synchronous Pipelined SRAM FEATURES • 512Kx36 or 1Mx18 Organizations. • 2.5V Core/1.5V Output Power Supply (1.9V max VDDQ). • HSTL Input and Output Levels. • Differential, HSTL Clock Inputs K, K. • Synchronous Read and Write Operation • Registered Input and Registered Output • Internal Pipeline Latches to Support Late Write. • Byte Write Capability(four byte write selects, one for each 9bits) • Synchronous or Asynchronous Output Enable. • Power Down Mode via ZZ Signal. • Programmable Impedance Output Drivers. • JTAG 1149.1 Compatible Test Access port. • 119(7x17)Pin Ball Grid Array Package(14mmx22mm). Organization 512Kx36 1Mx18 Part Number Maximum Frequency Access Time K7P163666A-HC33 333MHz 1.5 K7P163666A-HC30 300MHz 1.6 K7P163666A-HC25 250MHz 2.0 K7P161866A-HC33 333MHz 1.5 K7P161866A-HC30 300MHz 1.6 K7P161866A-HC25 250MHz 2.0 Read Address Register SA[0:18] or SA[0:19] 1 Write Address Register CK Latch SS SW SW Register SW Register SWx Register SWx Register SS Register SS Register 0 Row Decoder FUNCTIONAL BLOCK DIAGRAM Column Decoder Write/Read Circuit Latch SWx (x=a, b, c, d) or (x=a, b) 512Kx36 or 1Mx18 Array 0 1 Data In Register Data Out Register G ZZ K DQx[1:9] (x=a, b, c, d) or (x=a, b) CK K PIN DESCRIPTION Pin Name Pin Description Pin Name Pin Description K, K Differential Clocks SAn Synchronous Address Input DQn Bi-directional Data Bus G Asynchronous Output Enable SW Synchronous Global Write Enable SS Synchronous Select SWa Synchronous Byte a Write Enable TCK JTAG Test Clock SWb Synchronous Byte b Write Enable TMS JTAG Test Mode Select VREF M 1 , M2 HSTL Input Reference Voltage Read Protocol Mode Pins ( M1=VSS, M2=VDDQ ) SWc Synchronous Byte c Write Enable TDI JTAG Test Data Input SWd Synchronous Byte d Write Enable TDO JTAG Test Data Output ZZ Asynchronous Power Down ZQ Output Driver Impedance Control VDD Core Power Supply VSS GND VDDQ Output Power Supply NC No Connection -2- Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM PACKAGE PIN CONFIGURATIONS(TOP VIEW) K7P163666A(512Kx36) 1 2 3 4 5 6 7 A VDDQ SA13 SA10 NC SA7 SA4 VDDQ B NC SA18 SA9 NC SA8 SA17 NC C NC SA12 SA11 VDD SA6 SA5 NC D DQc8 DQc9 VSS ZQ VSS DQb9 DQb8 E DQc6 DQc7 VSS SS VSS DQb7 DQb6 F VDDQ DQc5 VSS G VSS DQb5 VDDQ G DQc3 DQc4 SWc NC SWb DQb4 DQb3 H DQc1 DQc2 VSS NC VSS DQb2 DQb1 J VDDQ VDD VREF VDD VREF VDD VDDQ K DQd1 DQd2 VSS K VSS DQa2 DQa1 L DQd3 DQd4 SWd K SWa DQa4 DQa3 M VDDQ DQd5 VSS SW VSS DQa5 VDDQ N DQd6 DQd7 VSS SA0 VSS DQa7 DQa6 P DQd8 DQd9 VSS SA1 VSS DQa9 DQa8 R NC SA15 M1 VDD M2 SA2 NC T NC NC SA14 SA16 SA3 NC ZZ U VDDQ TMS TDI TCK TDO NC VDDQ 1 2 3 4 5 6 7 A VDDQ SA13 SA10 NC SA7 SA4 VDDQ B NC SA19 SA9 NC SA8 SA17 NC C NC SA12 SA11 VDD SA6 SA5 NC D DQb1 NC VSS ZQ VSS DQa9 NC E NC DQb2 VSS SS VSS NC DQa8 F VDDQ NC VSS G VSS DQa7 VDDQ G NC DQb3 SWb NC NC NC DQa6 H DQb4 NC VSS NC VSS DQa5 NC K7P161866A(1Mx18) J VDDQ VDD VREF VDD VREF VDD VDDQ K NC DQb5 VSS K VSS NC DQa4 L DQb6 NC NC K SWa DQa3 NC M VDDQ DQb7 VSS SW VSS NC VDDQ N DQb8 NC VSS SA0 VSS DQa2 NC P NC DQb9 VSS SA1 VSS NC DQa1 R NC SA15 M1 VDD M2 SA2 NC T NC SA18 SA14 NC SA3 SA16 ZZ U VDDQ TMS TDI TCK TDO NC VDDQ -3- Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM FUNCTION DESCRIPTION The K7P163666A and K7P161866A are 18,874,368 bit Synchronous Pipeline Mode SRAM. It is organized as 524,288 words of 36 bits(or 1,048,576 words of 18 bits)and is implemented in SAMSUNGs advanced CMOS technology. Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed. At the updated from output registers edge of the next rising edge of the K clock. An internal write data buffer allows write data to follow one cycle after addresses and controls. The package is 119(7x17) Ball Grid Array with balls on a 1.27mm pitch. Read Operation During reads, the address is registered during the frist clock edge, the internal array is read between this first edge and the second edge, and data is captured in the output register and driven to the CPU during the second clock edge. SS is driven low during this cycle, signaling that the SRAM should drive out the data. During consecutive read cycles where the address is the same, the data output must be held constant without any glitches. This characteristic is because the SRAM will be read by devices that will operate slower than the SRAM frequency and will require multiple SRAM cycles to perform a single read operation. Write (Stire) Operation All addresses and SW are sampled on the clock rising edge. SW is low on the rising clock. Write data is sampled on the rising clock, one cycle after write address and SW have been sampled by the SRAM. SS will be driven low during the same cycle that the Address, SW and SW[a:d] are valid to signal that a valid operation is on the Address and Control Input. Pipelined write are supported. This is done by using write data buffers on the SRAM that capture the write addresses on one write cycle, and write the array on the next write cycle. The "next write cycle" can actually be many cycles away, broken by a series of read cycles. Byte writes are supported. The byte write signals SW[a:d] signal which 9-bit bytes will be writen. Timing of SW[a:d] is the same as the SW signal. Bypass Read Operation Since write data is not fully written into the array on first write cycle, there is a need to sense the address in case a future read is to be done from the location that has not been written yet. For this case, the address comparator check to see if the new read address is the same as the contents of the stored write address Latch. If the contents match, the read data must be supplied from the stored write data latch with standard read timing. If there is no match, the read data comes from the SRAM array. The bypassing of the SRAM array occurs on a byte by byte basis. If one byte is written and the other bytes are not, read data from the last written will have new byte data from the write data buffer and the other bytes from the SRAM array. Programmable Impedance Output Buffer Operation This HSTL Late Write SRAM has been designed with programmable impedance output buffers. The SRAMs output buffer impedance can be adjusted to match the system data bus impedance, by connecting a external resistor (RQ) between the ZQ pin of the SRAM and VSS. The value of RQ must be five times the value of the intended line impedance driven by the SRAM. For example, a 250Ω resistor will give an output buffer impedance of 50Ω. The allowable range of RQ is from 175Ω to 350Ω. Internal circuits evaluate and periodically adjust the output buffer impedance, as the impedance is affected by drifts in supply voltage and temperature. One evaluation occurs every 32 clock cycles, with each evaluation moving the output buffer impedance level only one step at a time toward the optimum level. Impedance updates occur when the SRAM is in High-Z state, and thus are triggered by write and deselect operations. Updates will also be triggered with G HIGH initiated High-Z state, providing the specified G setup and hold times are met. Impedance match is not instantaneous upon power-up. In order to guarantee optimum output driver impedance, the SRAM requires a minimum number of non-read cycles (1,024) after power-up. The output buffers can also be programmed in a minimum impedance configuration by connecting ZQ to VSS or VDD. Mode Control There are two mode control select pins (M1 and M2) used to set the proper read protocol. This SRAM supports single clock pipelined operating mode. For proper specified device operation, M1 must be connected to VSS and M2 must be connected to VDDQ. These mode pins must be set at power-up and must not change during device operation. Power-Up/Power-Down Supply Voltage Sequencing The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-down. Sleep Mode Sleep mode is a low power mode initiated by bringing the asynchronous ZZ pin high. During sleep mode, all other inputs are ignored and outputs are brought to a High-Impedance state. Sleep mode current and output High-Z are guaranteed after the specified sleep mode enable time. During sleep mode the memory array data content is preserved. Sleep mode must not be initiated until after all pending operations have completed, as any pending operation is not guaranteed to properly complete after sleep mode is initiated. Normal operations can be resumed by bringing the ZZ pin low, but only after the specified sleep mode recovery time. -4- Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM FUNCTION DESCRIPTION The K7P163666A and K7P161866A are 18,874,368 bit Dual Mode (supports both Register Register and Late Select Mode) SRAM devices. They are organized as 524,288 words by 36 bits for K7P163666A and 1,048,576 words by 18 bits for K7P161866A, fabricated using Samsung's advanced CMOS technology. Late Write/Pipelined Read(RR) for x36/x18 organizations and Late Write/Late Select Read(LS) for x36 organization are supported. The chip is operated with a single +2.5V power supply and is compatible wtih HSTL input and output. The package is 119(7x17) Plastic Ball Grid Array with balls on a 1.27mm pitch. Read Operation for Register Register Mode(x36 and x18) During read operations, addresses and controls are registered during the first rising edge of K clock and then the internal array is read between first and second edges of K clock. Data outputs are updated from output registers off the second rising edge of K clock. Read Operation for Late Select Mode(x36) During read operations, addresses(SA) and controls except the Way Select Address(SAS) are registered during the first rising edge of K clock. The internal array(x72 bit data) is read between the first edge and the second edge, and as the Way Select Address(SAS) is registered at the second clock edge, x36 bit data is mux selected before the output register. Write Operation(Late Write) During write operations, addresses including the Way Select Address(SAS) and controls are registered at the first rising edge of K clock and data inputs are registered at the following rising edge of K clock. Write addresses and data inputs are stored in the data in registers until the next write operation, and only at the next write opeation are data inputs fully written into SRAM array. Byte write operation is supported using SW[a:d] and the timing of SW[a:d] is the same as the SW signal. Bypass Read Operation Since write data is not fully written into the array on first write cycle, there is a need to sense the address in case a future read is to be done from the location that has not been written yet. For this case, the address comparator check to see if the new read address is the same as the contents of the stored write address Latch. If the contents match, the read data must be supplied from the stored write data latch with standard read timing. If there is no match, the read data comes from the SRAM array. The bypassing of the SRAM array occurs on a byte by byte basis. If one byte is written and the other bytes are not, read data from the last written will have new byte data from the write data buffer and the other bytes from the SRAM array. Programmable Impedance Output Buffer Operation This HSTL Late Write SRAM has been designed with programmable impedance output buffers. The SRAMs output buffer impedance can be adjusted to match the system data bus impedance, by connecting a external resistor (RQ) between the ZQ pin of the SRAM and VSS. The value of RQ must be five times the value of the intended line impedance driven by the SRAM. For example, a 250Ω resistor will give an output buffer impedance of 50Ω. The allowable range of RQ is from 175Ω to 350Ω. Internal circuits evaluate and periodically adjust the output buffer impedance, as the impedance is affected by drifts in supply voltage and temperature. One evaluation occurs every 32 clock cycles, with each evaluation moving the output buffer impedance level only one step at a time toward the optimum level. Impedance updates occur when the SRAM is in High-Z state, and thus are triggered by write and deselect operations. Updates will also be triggered with G HIGH initiated High-Z state, providing the specified G setup and hold times are met. Impedance match is not instantaneous upon power-up. In order to guarantee optimum output driver impedance, the SRAM requires a minimum number of non-read cycles (1,024) after power-up. The output buffers can also be programmed in a minimum impedance configuration by connecting ZQ to VSS or VDD. Mode Control There are two mode control select pins (M1 and M2) used to set the proper read protocol. This SRAM supports single clock pipelined operating mode. For proper specified device operation, M1 must be connected to VSS and M2 must be connected to VDD. These mode pins must be set at power-up and must not change during device operation. Power-Up/Power-Down Supply Voltage Sequencing The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-down. Sleep Mode Sleep mode is a low power mode initiated by bringing the asynchronous ZZ pin high. During sleep mode, all other inputs are ignored and outputs are brought to a High-Impedance state. Sleep mode current and output High-Z are guaranteed after the specified sleep mode enable time. During sleep mode the memory array data content is preserved. Sleep mode must not be initiated until after all pending operations have completed, as any pending operation is not guaranteed to properly complete after sleep mode is initiated. Normal operations can be resumed by bringing the ZZ pin low, but only after the specified sleep mode recovery time. -5- Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM TRUTH TABLE K ZZ G SS SW SWa SWb SWc SWd DQa DQb DQc DQd Operation X H X X X X X X X Hi-Z Hi-Z Hi-Z Hi-Z Power Down Mode. No Operation X L H X X X X X X Hi-Z Hi-Z Hi-Z Hi-Z Output Disabled. ↑ L L H X X X X X Hi-Z Hi-Z Hi-Z Hi-Z Output Disabled. No Operation ↑ L L L H X X X X DOUT DOUT DOUT DOUT Read Cycle ↑ L X L L H H H H Hi-Z Hi-Z Hi-Z Hi-Z No Bytes Written ↑ L X L L L H H H DIN Hi-Z Hi-Z Hi-Z Write first byte ↑ L X L L H L H H Hi-Z DIN Hi-Z Hi-Z Write second byte ↑ L X L L H H L H Hi-Z Hi-Z DIN Hi-Z Write third byte ↑ L X L L H H H L Hi-Z Hi-Z Hi-Z DIN Write fourth byte ↑ L X L L L L L L DIN DIN DIN DIN Write all bytes NOTE : K & K are complementary ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Core Supply Voltage Relative to VSS VDD -0.5 to 3.13 V Output Supply Voltage Relative to VSS VDDQ -0.5 to 2.4 V Voltage on any I/O pin Relative to VSS VTERM -0.5 to VDDQ+0.5 (2.4V MAX) V Output Short-Circuit Current IOUT 25 mA Operating Temperature TOPR 0 to 70 °C Storage Temperature TSTG -55 to 125 °C Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS Symbol Min Typ Max Unit Core Power Supply Voltage Parameter VDD 2.37 2.5 2.63 V Output Power Supply Voltage VDDQ 1.4 1.5 1.9 V VIH VREF+0.1 - VDDQ+0.3 V Input High Level VIL -0.3 - VREF-0.1 V VREF 0.6 0.75 0.9 V Clock Input Signal Voltage VIN-CLK -0.3 - VDDQ+0.3 V Clock Input Differential Voltage VDIF-CLK 0.1 - VDDQ+0.6 V Clock Input Common Mode Voltage VCM-CLK 0.6 0.75 0.9 V Input Low Level Input Reference Voltage -6- Note Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM PIN CAPACITANCE Parameter Input Capacitance Data Output Capacitance Symbol Test Condition Min Max Unit CIN VIN=0V - 4 pF COUT VOUT=0V - 5 pF NOTE : Periodically sampled and not 100% tested.(TA=25°C, f=1MHz) DC CHARACTERISTICS Symbol Min Max Unit Note Average Power Supply Operating Current-x36 (VIN=VIH or VIL, ZZ & SS=VIL) IDD33 IDD30 IDD25 - 700 620 550 mA 1, 2 Average Power Supply Operating Current-x18 (VIN=VIH or VIL, ZZ & SS=VIL) IDD33 IDD30 IDD25 - 650 570 500 mA 1, 2 Power Supply Standby Current (VIN=VIH or VIL, ZZ=VIH) ISBZZ - 128 mA 1 Active Standby Power Supply Current (VIN=VIH or VIL, SS=VIH, ZZ=VIL) ISBSS - 200 mA 1 Input Leakage Current (VIN=VSS or VDDQ) ILI -1 1 µA Output Leakage Current (VOUT=VSS or VDDQ, DQ in High-Z) ILO -1 1 µA Output High Voltage(Programmable Impedance Mode) VOH1 VDDQ/2 VDDQ V 3,5 Output Low Voltage(Programmable Impedance Mode) VOL1 VSS VDDQ/2 V 4,5 Output High Voltage(IOH=-0.1mA) VOH2 VDDQ-0.2 VDDQ V 6 Output Low Voltage(IOL=0.1mA) VOL2 VSS 0.2 V 6 Output High Voltage(IOH=-6mA) VOH3 VDDQ-0.4 VDDQ V 6 Output Low Voltage(IOL=6mA) VOL3 VSS 0.4 V 6 Parameter NOTE :1. Minimum cycle. IOUT=0mA. 2. 50% read cycles. 3. |IOH|=(VDDQ/2)/(RQ/5)±15% @VOH=VDDQ/2 for 175Ω ≤ RQ ≤ 350Ω. 4. |IOL|=(VDDQ/2)/(RQ/5)±15% @VOL=VDDQ/2 for 175Ω ≤ RQ ≤ 350Ω. 5. Programmable Impedance Output Buffer Mode. The ZQ pin is connected to VSS through RQ. 6. Minimum Impedance Output Buffer Mode. The ZQ pin is connected to VSS or VDD. -7- Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM AC TEST CONDITIONS (TA=0 to 70°C, VDD=2.37 -2.63V, VDDQ=1.5V) Parameter Symbol Value Unit VDD 2.37~2.63 V Core Power Supply Voltage Output Power Supply Voltage Input High/Low Level VDDQ 1.5 V VIH/VIL 1.25/0.25 V Input Reference Level VREF 0.75 V Input Rise/Fall Time TR/TF 0.5/0.5 ns 0.75 V Cross Point V Input and Out Timing Reference Level Clock Input Timing Reference Level NOTE : Parameters are tested with RQ=250Ω and VDDQ=1.5V. AC TEST OUTPUT LOAD 50Ω 50Ω VDDQ/2 5pF 25Ω DQ VDDQ/2 50Ω 50Ω VDDQ/2 5pF AC CHARACTERISTICS Parameter Symbol -33 -30 -25 Min Max Min Max Min Max Unit Clock Cycle Time tKHKH 3.0 - 3.3 - 4.0 - ns Clock High Pulse Width tKHKL 1.2 - 1.3 - 1.6 - ns Clock Low Pulse Width tKLKH 1.2 - 1.3 - 1.6 - ns Clock High to Output Valid tKHQV - 1.5 - 1.6 - 2.0 ns Clock High to Output Hold tKHQX 0.5 - 0.5 - 0.5 - ns Address Setup Time tAVKH 0.3 - 0.3 - 0.3 - ns Address Hold Time tKHAX 0.5 - 0.6 - 0.6 - ns Write Data Setup Time tDVKH 0.3 - 0.3 - 0.3 - ns Write Data Hold Time tKHDX 0.5 - 0.6 - 0.6 - ns SW, SW[a:d] Setup Time tWVKH 0.3 - 0.3 - 0.3 - ns SW, SW[a:d] Hold Time tKHWX 0.5 - 0.6 - 0.6 - ns SS Setup Time tSVKH 0.3 - 0.3 - 0.3 - ns SS Hold Time tKHSX 0.5 - 0.6 - 0.6 - ns Clock High to Output Hi-Z tKHQZ - 1.5 - 1.6 - 2.0 ns Clock High to Output Low-Z tKHQX1 0.5 - 0.5 - 0.5 - ns G High to Output High-Z tGHQZ - 1.5 - 1.6 - 2.0 ns G Low to Output Low-Z tGLQX 0.5 - 0.5 - 0.5 - ns G Low to Output Valid tGLQV - 1.5 - 1.6 - 2.0 ns ZZ High to Power Down(Sleep Time) tZZE - 15 - 15 - 15 ns ZZ Low to Recovery(Wake-up Time) tZZR - 20 - 20 - 20 ns -8- Note Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (SS Controlled, G=Low) 1 2 3 4 5 6 7 8 K tKHKH tAVKH SAn A1 tKHAX tKHKL tKLKH A2 A3 A4 A5 A4 A6 A7 tKHSX tSVKH SS tWVKH tKHWX tWVKH tKHWX tKHWX tWVKH SW SWx tKHQZ tKHQV Q2 Q1 DQn tKHDX tDVKH tKHDX tKHQX tKHQX1 D4 D3 Q5 Q4 NOTE 1. D3 is the input data written in memory location A3. 2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the last write cycle address. TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (G Controlled, SS=Low) 1 2 3 4 5 6 7 8 K tKHKH SAn A1 A3 A2 A4 A5 A4 A6 A7 G SW SWx tGHQZ tGLQV tGLQX DQn Q1 Q2 D3 D4 Q5 Q4 NOTE 1. D3 is the input data written in memory location A3. 2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the last write cycle address. -9- Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM TIMING WAVEFORMS OF STANDBY CYCLES 1 2 3 4 5 6 7 8 K tKHKH SAn A1 A2 A1 A2 A3 SS SW SWx tZZR tZZE ZZ tKHQV tKHQV DQn Q1 Q2 Q1 - 10 Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG The SRAM provides a limited set of IEEE standard 1149.1 JTAG functions. This is to test the connectivity during manufacturing between SRAM, printed circuit board and other components. Internal data is not driven out of SRAM under JTAG control. In conformance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP controller has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM, TCK must be tied to VSS to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the application of a logic 1, and therefore can be left unconnected. But they may also be tied to VDD through a resistor. TDO should be left unconnected. JTAG Instruction Coding JTAG Block Diagram IR2 IR1 IR0 Instruction SRAM CORE M1 M2 TDI BYPASS Reg. TDO Identification Reg. Instruction Reg. Notes 0 0 SAMPLE-Z Boundary Scan Register 0 0 1 IDCODE 0 1 0 SAMPLE-Z Boundary Scan Register Identification Register 1 2 1 0 1 1 BYPASS Bypass Register 3 1 0 0 SAMPLE Boundary Scan Register 4 1 0 1 BYPASS Bypass Register 3 1 1 0 BYPASS Bypass Register 3 1 1 1 BYPASS Bypass Register 3 NOTE : 1. Places DQs in Hi-Z in order to sample all input data regardless of other SRAM inputs. 2. TDI is sampled as an input to the first ID register to allow for the serial shift of the external TDI data. 3. Bypass register is initiated to VSS when BYPASS instruction is invoked. The Bypass Register also holds serially loaded TDI when exiting the Shift DR states. 4. SAMPLE instruction does not places DQs in Hi-Z. Control Signals TMS TCK TDO Output 0 TAP Controller TAP Controller State Diagram 1 Test Logic Reset 0 0 Run Test Idle 1 Select DR 0 1 1 Exit2 DR 1 Update DR 0 - 11 1 Capture IR 0 0 1 Exit1 DR 0 Pause DR 1 Select IR 0 1 Capture DR 0 Shift DR 1 1 1 0 0 Shift IR 1 0 Exit1 IR 0 Pause IR 1 Exit2 IR 1 Update IR 1 0 0 0 Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM SCAN REGISTER DEFINITION Part Instruction Register Bypass Register ID Register Boundary Scan 512Kx36 3 bits 1 bits 32 bits 70 bits 1Mx18 3 bits 1 bits 32 bits 51 bits ID REGISTER DEFINITION Part Revision Number (31:28) Part Configuration (27:18) Vendor Definition (17:12) Samsung JEDEC Code (11: 1) Start Bit(0) 512Kx36 0000 00111 00100 XXXXXX 00001001110 1 1Mx18 0000 01000 00011 XXXXXX 00001001110 1 BOUNDARY SCAN EXIT ORDER(x36) BOUNDARY SCAN EXIT ORDER(x18) 36 3B SA9 SA8 5B 35 26 3B SA9 SA8 5B 25 37 2B SA18 SA17 6B 34 27 2B SA19 SA17 6B 24 38 3A SA10 SA7 5A 33 28 3A SA10 SA7 5A 23 39 3C SA11 SA6 5C 32 29 3C SA11 SA6 5C 22 40 2C SA12 SA5 6C 31 30 2C SA12 SA5 6C 21 41 2A SA13 SA4 6A 30 31 2A SA13 SA4 6A 20 42 2D DQc9 DQb9 6D 29 DQa9 6D 19 43 1D DQc8 DQb8 7D 28 32 1D DQb1 44 2E DQc7 DQb7 6E 27 33 2E DQb2 45 1E DQc6 DQb6 7E 26 DQa8 7E 18 46 2F DQc5 DQb5 6F 25 DQa7 6F 17 47 2G DQc4 DQb4 6G 24 48 1G DQc3 DQb3 7G 23 DQa6 7G 16 49 2H DQc2 DQb2 6H 22 DQa5 6H 15 50 1H DQc1 DQb1 7H 21 35 1H DQb4 51 3G SWc SWb 5G 20 36 3G SWb 52 4D ZQ G 4F 19 37 4D ZQ G 4F 14 53 4E SS K 4K 18 38 4E SS K 4K 13 54 4G NC* 12 55 4H NC* 56 4M 1 34 2G DQb3 K 4L 17 39 4G NC K 4L SWa 5L 16 40 4H NC SWa 5L 11 SW DQa1 7K 15 41 4M SW DQa4 7K 10 DQa3 6L 9 1 57 3L SWd DQa2 6K 14 58 1K DQd1 DQa3 7L 13 59 2K DQd2 DQa4 6L 12 42 2K DQb5 60 1L DQd3 DQa5 6M 11 43 1L DQb6 61 2L DQd4 DQa6 7N 10 62 2M DQd5 DQa7 6N 9 44 2M DQb7 DQa2 6N 8 63 1N DQd6 DQa8 7P 8 45 1N DQb8 DQa1 7P 7 64 2N DQd7 DQa9 6P 7 ZZ 7T 6 46 2P DQb9 SA3 5T 5 SA2 6R 4 3 65 1P DQd8 ZZ 7T 6 66 2P DQd9 SA3 5T 5 67 3T SA14 SA2 6R 4 47 3T SA14 68 2R SA15 SA16 4T 3 48 2R SA15 69 4N SA0 SA1 4P 2 70 3R M1 M2 5R 1 49 4N SA0 SA1 4P 50 2T SA18 SA16 6T 2 51 3R M1 M2 5R 1 NOTE :1. Pins 4G and 4H are no connection pin to internal chip. The scanned data are fixed to "0" and "1" respectively. - 12 Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM JTAG DC OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Power Supply Voltage VDD 2.37 Input High Level VIH 1.7 2.5 2.63 V - VDD+0.3 V Input Low Level VIL -0.3 - 0.8 V Output High Voltage(IOH=-2mA) VOH 2.1 - VDD V Output Low Voltage(IOL=2mA) VOL VSS - 0.2 V Note NOTE : 1. The input level of SRAM pin is to follow the SRAM DC specification. JTAG AC TEST CONDITIONS Symbol Min Unit Input High/Low Level Parameter VIH/VIL 2.5/0.0 V Input Rise/Fall Time TR/TF 1.0/1.0 ns 1.25 V Input and Output Timing Reference Level Note 1 NOTE : 1. See SRAM AC test output load on page 7. JTAG AC Characteristics Parameter Symbol Min Max Unit tCHCH 50 - ns TCK High Pulse Width tCHCL 20 - ns TCK Low Pulse Width tCLCH 20 - ns TMS Input Setup Time tMVCH 5 - ns TMS Input Hold Time tCHMX 5 - ns TDI Input Setup Time tDVCH 5 - ns TDI Input Hold Time tCHDX 5 - ns SRAM Input Setup Time tSVCH 5 - ns SRAM Input Hold Time tCHSX 5 - ns Clock Low to Output Valid tCLQV 0 10 ns TCK Cycle Time Note JTAG TIMING DIAGRAM TCK tCHCH tCHCL tMVCH tCHMX tDVCH tCHDX tSVCH tCHSX tCLCH TMS TDI PI (SRAM) tCLQV TDO - 13 Sep. 2003 Rev 0.3 K7P163666A K7P161866A 512Kx36 & 1Mx18 SRAM 119 BGA PACKAGE DIMENSIONS 14.00±0.10 1.27 1.27 22.00±0.10 Indicator of Ball(1A) Location 20.50±0.10 C0.70 C1.00 0.750±0.15 1.50REF 0.60±0.10 NOTE : 1. All Dimensions are in Millimeters. 2. Solder Ball to PCB Offset : 0.10 MAX. 3. PCB to Cavity Offset : 0.10 MAX. 0.60±0.10 12.50±0.10 119 BGA PACKAGE THERMAL CHARACTERISTICS Parameter Symbol Thermal Resistance Unit Note 1W Heating Junction to Ambient(at still air) Theta_JA TBD °C/W Junction to Case Theta_JC TBD °C/W Junction to Board Theta_JB TBD °C/W 2W Heating NOTE : 1. Junction temperature can be calculated by : TJ = TA + PD x Theta_JA. - 14 Sep. 2003 Rev 0.3