SANYO SBE813

SBE813
Ordering number : EN8967
SANYO Semiconductors
DATA SHEET
SBE813
Low IR Schottky Barrier Diode
30V, 3.0A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Symbol
Conditions
Ratings
Unit
VRRM
VRSM
30
V
35
V
Average Output Current
IO
3.0
A
Surge Forward Current
IFSM
20
A
Nonrepetitive Peak Reverse Surge Voltage
50Hz sine wave, 1 cycle
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VR
VF1
IR=0.5mA
IF=2.0A
VF2
IF=3.0A
VR=15V
VR=10V, f=1MHz
IR
Interterminal Capacitance
C
Reverse Recovery Time
trr
Thermal Resistance
Rth(j-a)
Ratings
Conditions
min
typ
Unit
max
30
V
0.435
0.485
0.47
0.52
V
42
µA
90
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (1200mm2✕0.8mm)
V
pF
20
50
ns
°C / W
Marking : SE
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406SB MS IM TB-00002132 No.8967-1/3
SBE813
Electrical Connection
0.3
8
7
8
7
6
5
1
2
3
4
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
0.15
6 5
1
0.25
2.8
2.3
0.25
Package Dimensions
unit : mm
7012-001
2
3
4
Top view
0.65
0.75
2.9
0.07
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : VEC8
IF -- VF
10
7
5
Reverse Current, IR -- µA
2
1.0
7
5
3
2
0.1
7
5
25°
100 C
°C
75°
C
50°C
25°C
0°C
--25°
C
Forward Current, IF -- A
Ta=125°C
100°C
1000
3
2
75°C
100
50°C
10
25°C
1.0
0°C
0.1
--25°C
0.01
Ta=
1
3
0.001
0.01
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage, VF -- V
Rectangular
wave
1.8
(1)
(2) (4) (3)
θ
1.6
360°
1.4
Sine wave
1.2
180°
1.0
360°
0.8
0.6
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.4
0.2
0
0
0.5
1.0
1.5
2.0
5
10
2.5
Average Output Current, IO -- A
3.0
3.5
IT09870
15
20
25
30
Reverse Voltage, VR -- V
IT09868
PF(AV) -- IO
2.0
0
0.7
Average Reverse Power Dissipation, PR(AV) -- W
0
Average Forward Power Dissipation, PF(AV) -- W
IR -- VR
10000
35
IT09869
PR(AV) -- VR
4.00E--04
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
3.50E--04
3.00E--04
(2)
360°
θ
Rectangular
wave
V
2.50E--04
(1)
R
(3)
2.00E--04
Sine wave
360°
180°
1.50E--04
VR
1.00E--04
(4)
5.00E--05
0.00E+00
0
5
10
15
20
25
Peak Reverse Voltage, VR -- V
30
35
IT10631
No.8967-2/3
SBE813
Tc -- IO
140
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
100
5
Interterminal Capacitance, C -- pF
Case Temperature, Tc -- °C
120
*When mounted in reliability
operaion board, Rth(J-a)=50°C/W
80
60
Rectangular
wave
θ
40
360°
20
Sine
wave
(1)
(2) (4)
C -- VR
7
(3)
180°
3
2
100
7
5
360°
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Average Output Current, IO -- A
IT10632
IFSM -- t
24
Surge Forward Current, IFSM(Peak) -- A
3.5
3
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Reverse Voltage, VR -- V
3
5
IT09871
Current waveform 50Hz sine wave
IS
20
20ms
t
16
12
8
4
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00523
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the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
PS No.8967-3/3