SB1003M Ordering number : ENN8369 SB1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • Low Switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting SB1003M applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Repetitive Peak Reverse Voltage Conditions Ratings Unit VRRM VRSM 30 V 35 V Average Output Current IO 1 A Surge Forward Current IFSM 10 A Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Reverse Voltage VR Forward Voltage VF IR=200µA IF=1A Reverse Current IR VR=15V C VR=10V, f=1MHz Interterminal Capacitance Reverse Recovery Time Thermal Resistance trr Rth(j-a) Ratings min typ max 30 V 0.55 V 15 µA 27 IF=IR=100mA, See specified Test Circuit. pF 10 Mounted on a ceramic board (600mm2✕0.8mm) Unit 138 ns °C / W Marking : SB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 63005SB MS IM TB-00001440 No.8369-1/3 SB1003M Package Dimensions unit : mm 7022-005 trr Test Circuit 0.25 0.3 4 5 50Ω 0.15 100Ω 10Ω 6 1.6 2.1 10µs 10mA Bottom View 100mA 100mA Duty≤10% --5V 0.25 3 2 0.65 1 0.07 trr 6 5 4 0.85 2.0 1 : Cathode 2 : Cathode 3 : No Contact 4 : Anode 5 : Cathode 6 : Cathode 1 2 3 Top View IF -- VF °C 50 °C 1.0 7 5 3 2 °C --25 Ta= 1 0.01 7 5 3 2 25° C 25° 10 0 °C C 75 0.1 7 5 3 2 0.001 0 0.2 0.1 0.3 0.4 0.5 0.6 Ta=125°C 100°C 0.7 75°C 50°C 25°C --25°C 0 20 10 PF(AV) -- IO (1) (2) (4) (3) (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 120 θ 360° 0.5 Sine wave 0.4 180° 360° 0.3 0.2 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.1 0 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A 1.0 40 IT07935 Tc -- IO 140 Rectangular wave 0.6 30 Reverse Voltage, VR -- V IT07934 Case Temperature, Tc -- °C Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V 0.7 IR -- VR 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 Reverse Current, IR -- µA 10 7 5 3 2 Forward Current, IF -- A SANYO : MCPH6 100 80 60 40 (1) (2) (4) (3) 20 0 1.2 IT08184 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A 1.0 1.2 IT08185 No.8369-2/3 SB1003M C -- VR f=1MHz 2 100 7 5 3 2 10 0.1 IFSM -- t 14 Surge Forward Current, IFSM(Peak) -- A Interterminal Capacitance, C -- pF 3 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 7 100 IT07938 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Time, t -- s 2 3 ID00435 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8369-3/3