SBR200-16JS Ordering number : ENA0525 SANYO Semiconductors DATA SHEET SBR200-16JS Schottky Barrier Diode (Twin Type · Cathode Common) 160V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • • Tj=150°C. Low forward voltage (VF max=0.85V). Small reverse current (IR typ=10µA). Short reverse recovery time. Low switching noise. High reliability due to planar structure. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Symbol Conditions Ratings VRRM VRSM Average Output Current IO Surge Forward Current IFSM 50Hz resistive load, sine wave Tc=66°C 50Hz sine wave, 1 cycle Unit 160 V 165 V 20 A 120 A Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Reverse Voltage VR Forward Voltage VF Reverse Current IR Rth(j-c) Thermal Resistance Conditions IR=3mA, Tj=25°C* IF=10A, Tj=25°C* VR=160V, Tj=25°C* Junction-Case : Smoothed DC Ratings min typ max 160 Unit V 0.80 0.85 V 10 200 µA 3.5 °C / W Note) * : Value per element Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1806SD SY IM TC-00000238 No. A0525-1/3 SBR200-16JS Package Dimensions Electrical Connection unit : mm (typ) 7525-001 Anode 10.0 Anode 4.5 3.2 16.0 7.2 3.5 2.8 3.6 Cathode 1.6 14.0 1.2 0.75 1 2 3 0.7 2.4 1 : Anode 2 : Cathode 3 : Anode 2.55 2.55 SANYO : TO-220ML(LS) IF -- VF 5 3 Reverse Current, IR -- mA 25° C 2 typ yp Ct 150 ° 3 1.0 7 5 3 Tj=15 2 10 7 5 125°C typ 3 2 100°C typ 1.0 7 5 p 75°C ty 3 2 p 0°C ty 3 10 7 5 Tj= Forward Current, IF -- A 2 2 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage, VF -- V PF(AV) -- IO 28 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 26 24 22 (3) (4) (2) 20 18 (1) 16 Rectangular wave 14 12 θ 10 360° 8 Sine wave 6 4 180° 2 0 360° 0 2 4 6 8 10 12 14 16 18 0 1.4 20 40 60 20 Average Forward Current, IO -- A 22 24 26 IT11551 80 100 120 140 Reverse Voltage, VR -- V IT11549 Average Reverse Power Dissipation, PR(AV) -- W 0 Average Forward Power Dissipation, PF(AV) -- W IR -- VR 100 7 5 6 5 4 PR(AV) -- VRM (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (1) (2) Rectangular wave (3) θ 3 360° Sine wave VR (4) 180° 1 180 IT11550 VR 2 160 360° 0 0 20 40 60 80 100 120 140 Peak Reverse Voltage, VRM -- V 160 180 IT11552 No. A0525-2/3 SBR200-16JS Tc -- IO 170 130 f=100kHz 5 Interterminal Capacitance, C -- pF Case Temperature, Tc -- °C 150 Rectangular wave 110 θ 360° 90 70 Sine wave 50 180° 0 10 5 (3) (4) 15 20 25 Average Output Current, IO -- A Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 120 IS 20ms t 100 80 60 40 20 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 100 7 5 3 2 2 3 ID01081 3 5 7 2 10 3 5 Reverse Voltage, VR -- V IT11553 IFSM -- t 140 3 2 1.0 30 Transient Thermal Resistance, Rth(j-c) -- °C / W 30 (2) (1) 360° C -- VR 7 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 7 100 IT11554 Rth(j-c) -- t 10 7 5 3 2 1.0 7 5 3 2 0.1 0.001 0.01 0.1 1.0 10 100 1000 Time, t -- s 10000 IT06967 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0525-3/3