SANYO SS1003EJ

SS1003EJ
Ordering number : EN8157A
SANYO Semiconductors
DATA SHEET
SS1003EJ
Schottky Barrier Diode
30V, 1A Rectifier
Applications
•
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
Low switching noise.
Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).
Ultraminiature (1608 size) and thin (0.6mm) leadless package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Symbol
Conditions
Ratings
Unit
VRRM
VRSM
30
V
35
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
5
A
Nonrepetitive Peak Reverse Surge Voltage
50Hz sine wave, 1 cycle
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Symbol
VR
VF1
IR=500µA
IF=500mA
VF2
IF=1A
Reverse Current
IR
Interterminal Capacitance
C
Reverse Recovery Time
Thermal Resistance
Conditions
trr
Rth(j-a)
Ratings
min
typ
max
30
VR=15V
VR=10V, f=1MHz
V
0.39
V
0.45
V
360
µA
27
IF=IR=10mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2✕0.8mm)
Unit
pF
10
165
ns
°C / W
Marking : DH
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806 SY IM TC-00000252 / N3004 TS IM TB-00000946 No.8157-1/3
SS1003EJ
Package Dimensions
unit : mm (typ)
7033A-001
Top View
0.8
3
1
2
1.6
4
0.025
0.6
Polarity Discriminating Mark
0.5
0.2
2
1.2
0.3
1
3
SANYO : ECSP1608-4
Bottom View
Type No. Indication (Top view)
Electrical Connection (Top view) trr Test Circuit
Cathode mark (Top)
DH
Anode
Cathode
50Ω
100Ω
10Ω
10µs
*Electrodes : on the bottom
1mA
10mA
Duty≤10%
10mA
4
1 : Cathode
2 : Cathode
3 : Anode
4 : Anode
--5V
trr
Cathode mark (Top)
Anode
Cathode
IF -- VF
Reverse Current, IR -- µA
50
°
°C
75
°C
--2
5°C
C
°C 10
0°
0.001
0
0.1
°C
Ta=125
10000
7
5
3
2
25
0.01
7
5
3
2
25
0.1
7
5
3
2
IR -- VR
3
2
C
1.0
7
5
3
2
Ta
=1
Forward Current, IF -- A
10
7
5
3
2
0.2
0.3
Forward Voltage, VF -- V
0.4
0.5
IT07939
100°C
75°C
1000
7
5
3
2
50°C
25°C
100
7
5
3
2
--25°C
10
7
5
3
2
1.0
0
10
20
Reverse Voltage, VR -- V
30
40
IT07940
No.8157-2/3
0.6
0.5
PF(AV) -- IO
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(1)
(2) (4) (3)
Rectangular
wave
θ
0.2
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
120
0.4
0.3
Tc -- IO
140
Case Temperature, Tc -- °C
Average Forward Power Dissipation, PF(AV) -- W
SS1003EJ
360°
Sine wave
0.1
100
80
60
40
20
360°
1.0
0
0
0.2
0.4
0.6
0.8
Average Output Current, IO -- A
(2) (4) (3)
(1)
180°
0
1.2
IT08214
0
0.2
0.4
0.6
0.8
1.0
Average Output Current, IO -- A
1.2
IT08215
C -- VR
3
f=1MHz
Interterminal Capacitance, C -- pF
2
100
7
5
3
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
Reverse Voltage, VR -- V
2
3
5 7 100
IT07943
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of October, 2006. Specifications and information herein are subject
to change without notice.
PS No.8157-3/3