SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • Small switching noise. Low leakage current and high reliability due to planar structure. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Symbol Conditions Ratings VRRM VRSM IO IFSM 50Hz sine wave, 1 cycle Unit 15 V 17 V 1 A 10 A Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time IR=0.1mA IF=0.5A VF2 IF=1A VR=6V VR=10V, f=1MHz C trr Rth(j-a) Ratings Conditions VR VF1 IR Interterminal Capacitance Thermal Resistance Symbol min typ Unit max 15 V 0.43 0.48 0.49 0.54 V 3.0 µA 20 IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2✕0.8mm) V pF 10 185 ns °C / W Marking : SE Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0106SB SY IM TC-00000264 No. A0451-1/3 SBE808 Package Dimensions Electrical Connection 5 2.0 5 4 1 : Anode 2 : No Contact 3 : Anode 4 : Cathode 5 : Cathode 0.15 4 0 to 0.02 2.1 1.6 0.25 unit : mm (typ) 7021A-001 1 0.25 1 2 2 3 Top view 3 0.65 0.07 0.85 0.3 1 2 5 1 : Anode 2 : No Contact 3 : Anode 4 : Cathode 5 : Cathode 3 SANYO : MCPH5 4 trr Test Circuit 50Ω 100Ω 10Ω 10µs 10mA 100mA 100mA Duty≤10% --5V trr IF -- VF Ta=150°C Reverse Current, IR -- µA 1000 1.0 7 5 3 2 50° 12 C 5° 100 C °C 25° C 50° C 25° C 0°C --25 °C 0.1 7 5 3 2 0.01 7 5 3 2 125°C 100°C 100 75°C 10 50°C 1.0 25°C 0.1 0°C 0.01 --25°C 0.001 0.001 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage, VF -- V 0.7 PF(AV) -- IO 0.7 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.6 (1) 0 1.2E--05 (2) (4) (3) 0.5 8.0E--06 0.4 Rectangular wave θ 0.2 360° Sine wave 180° 360° 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A 1.0 6 8 10 12 14 16 IT11244 PR(AV) -- VRM (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (1) (2) Rectangular wave VR 6.0E--06 θ 4.0E--06 Sine wave (3) 360° (4) VR 180° 2.0E--06 0.1 0 4 Reverse Voltage, VR -- V 1.0E--05 0.3 2 IT11243 Average Reverse Power Dissipation, PR(AV) -- W 0 Average Forward Power Dissipation, PF(AV) -- W IR -- VR 10000 Ta= 1 Forward Current, IF -- A 10 7 5 3 2 360° 0.0E+00 1.2 IT11245 0 2 4 6 8 10 12 14 Peak Reverse Voltage, VRM -- V 16 IT11246 No. A0451-2/3 SBE808 C -- VR 100 Surge Forward Current, IFSM(Peak) -- A Interterminal Capacitance, C -- pF 7 5 3 2 10 0.1 IFSM -- t 12 f=1MHz Current waveform 50Hz sine wave 10 IS 20ms t 8 6 4 2 0 2 3 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 IT07885 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Time, t -- s 2 3 IT00626 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0451-3/3