SK 85 MH 10 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET -## -0## 2 28 ( )* +, ( )* 4/ +5 . 9 . 5 ( 4/ +5 . : Values Units .// 1 )/ 4/ 6/ .)/ 7 7 ! ;/ <<< = .*/ + 4/ 6/ .)/ 7 7 ! ;/ <<< = .*/ + Inverse diode ® SEMITOP 2 MOSFET Module 2> ( ! 2 2>8 ( ! 28 ( )* 4/ +5 9 . 5 ( 4/ +5 : Freewheeling CAL diode 2> ( ! 2 ( + 7 + : , ./ ! ;/ <<< = .)* )6/ + + - 7, . . )*// ? @/// - SK 85 MH 10 T Preliminary Data Features ! " # Typical Applications $ % % &'# Characteristics Symbol Conditions MOSFET -A## -0# 2## 20## A# -0# ( / -, 2 ( *,6 7 -0# ( -#5 2 ( *,6 7 -0# ( / -5 -# ( -##5 : ( )* + -0# ( 1 )/- 5-# ( / 2 ( 4/ 75 -0# ( ./ -5 : ( )* + A# 2 ( 4/ 75 -0# ( ./ -5 8#>E F -0# ( / -5 -# ( )* -5 ( . 8H : ( )* +, min. typ. .// ),* @,@ ( .)* + max. .// .// C,* B7 7 D .@,* D > G,. .,4 > > .,6 > $# F - ( */ -5 -0# ( ./ -5 2 ( */ 7 A0 ( *6 D A:! Units @// .;/ .**/ .*/ 8#>E .,. I?J Inverse diode -# 2> ( */ 75 -0# ( / -5 /,G - 2AA8 K F 2> ( */ 75 %: ( )* +5 A0 ( *6 D ); /,G 7 B -A ( 6* 75 ? ( .// 7?B C/ : ( + Free-wheeling diode -> 2> ( 75 -0# ( - - 2AA8 K F 2> ( 75 %: ( + 7 B - ( 75 ? ( 7?B Mechanical data 8. L ) )/ M MH - T 1 16-02-2007 DIL © by SEMIKRON SK 85 MH 10 T MOSFET,TRANSISTOR Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C Fig. 4 Temperature Sensor Characteristic Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage Fig. 7 Gate charge characteristic, IDp = 80 A Fig. 8 Diode forward characteristic, tp = 80 µs 2 16-02-2007 DIL © by SEMIKRON SK 85 MH 10 T MOSFET,TRANSISTOR Dimensions in mm #&00E# E $E278E EA >A E #$EA '2M# 7M E 8&M 2M0 '2M# 2M E 'F ) 8 ! This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 16-02-2007 DIL © by SEMIKRON