SPANSION S71WS512PD0HF3SR2

S71WS-P based MCP Products
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode
Flash Memory with CellularRAM
Data Sheet (Advance Information)
S71WS-P based MCP Products Cover Sheet
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S71WS-P_00
Revision A
Amendment 2
Issue Date August 21, 2006
Da ta
Sh eet
( A dvan ce
In fo r mat io n)
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of
product information or intended specifications throughout the product life cycle, including development,
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify
that they have the latest information before finalizing their design. The following descriptions of Spansion data
sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific
products, but has not committed any design to production. Information presented in a document with this
designation is likely to change, and in some cases, development on the product may discontinue. Spansion
Inc. therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion Inc.
The information is intended to help you evaluate this product. Do not design in this product without
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this
proposed product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment
to production has taken place. This designation covers several aspects of the product life cycle, including
product qualification, initial production, and the subsequent phases in the manufacturing process that occur
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places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s)
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Combination
Some data sheets contain a combination of products with different designations (Advance Information,
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Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
page refers the reader to the notice on this page.
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When a product has been in production for a period of time such that no changes or only nominal changes
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include
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description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following
conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. Spansion Inc. deems the products to have been in sufficient production volume such
that subsequent versions of this document are not expected to change. However, typographical or
specification corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local AMD or Fujitsu sales office.
ii
S71WS-P based MCP Products
S71WS-P_00_A2 August 21, 2006
S71WS-P based MCP Products
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode
Flash Memory with CellularRAM
Data Sheet (Advance Information)
Features
„ Power supply voltage of 1.7 to 1.95V
„ pSRAM burst frequency: 66 MHz, 80 MHz, 104 MHz
„ Flash access time: 80 ns, 25 ns
„ Package:
„ Flash burst frequencies: 66 MHz, 80 MHz, 108 MHz
– 8.0 x 11.6 mm MCP
„ Operating Temperature
„ pSRAM Access time: 70 ns, 20 ns
– –25°C to +85°C (wireless)
The S71WS series is a product line of stacked packages and consists of:
„ One or two S29WS-P NOR flash memory die
„ CellularRAM die
The products covered by this document are listed in the table below.
CellularRAM Density (Mb)
Device
64 Mb
128 Mb
S29WS512P
S71WS512PC0
S71WS512PD0
Note:
For a full list of OPNs, please contact the local sales representative or refer to the Ordering Information valid combinations tables.
For detailed specifications, please refer to the individual data sheets.
Document
Publication Identification Number (PID)
S29WS-P
S29WS-P_00
128 M CellularRAM Type 2
Cellram_04
64 M CellularRAM Type 2
Cellram_07
Publication Number S71WS-P_00
Revision A
Amendment 2
Issue Date August 21, 2006
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design
in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
Da ta
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Product Selector Guide
Device
Model
Number
S71WS512PD0HF3
HR
S71WS512PC0HF3
SV
S71WS512PD0HF3
HL
Flash
Density (Mb)
CellularRAM Flash Speed
Density (Mb)
(MHz)
128
80
64
66
128
108
CellularRAM
Speed (MHz)
CellularRAM
Supplier
104
512
Type 2
Package
MCP
8 x 11.6 mm
104
2. MCP Block Diagram
A0-Amax
A0-Amax
AFlash
AFlash
RDY
RDY
CLK
AVD#
F-CE#
OE#
F-RST#
F-ACC
F-WP#
F-WE#
CLK
AVD#
CE#
OE#
RESET#
ACC
WP#
WE#
WS-P
Flash
Memory
DQ0-DQ15
DQ0-DQ15
VSS
VSS
VCC
VCCQ
F-VCC
F-VCCQ
A0-Amax
DQ0-DQ15
WAIT#
R-CE#
R-LB#
R-UB#
R-CRE
CLK
AVD#
CE#
OE#
LB#
UB#
WE#
CRE
pSRAM
Memory
VSS
VCC
VCCQ
2
S71WS-P based MCP Products
R-VCC
R-VCCQ
S71WS-P_00_A2 August 21, 2006
Da t a
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2
5
3. Connection Diagrams
1
3
4
6
7
8
9
10
A
DNU
DNU
B
AVD#
VSS
CLK
RFU
F-VCC
RFU
RFU
RFU
Legend
C
F-WP#
A7
R-LB#
F-ACC
WE#
A8
A11
RFU
Reserved for
Future Use
D
A3
A6
R-UB#
F-RST#
RFU
A19
A12
A15
A2
A5
A18
RDY
A20
A9
A13
A21
A1
A4
A17
RFU
A23
A10
A14
A22
A0
VSS
DQ1
RFU
RFU
DQ6
A24
A16
Flash & pSRAM
Shared Only
F-CE#
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
R-CRE
Do Not Use
R-CE#
DQ0
DQ10
F-VCC
R-VCC
DQ12
DQ7
VSS
RFU
DQ8
DQ2
DQ11
RFU
DQ5
DQ14
RFU
RFU
RFU
VSS
F-VCC
RFU
RFU
F-VCCQ
DNU
NOR Flash Only
E
F
pSRAM Only
G
H
J
K
L
M
DNU
3.1
DNU
MCP
Flash-only Addresses
Shared Addresses
S71WS512PD0
A24-A23
A22-A0
S71WS512PC0
A24-A22
A21-A0
Special Handling Instructions For FBGA Package
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The
package and/or data integrity may be compromised if the package body is exposed to temperatures above
150×C for prolonged periods of time.
3.2
Look-ahead Ballout for Future Designs
Please refer to the Design-in Scalable Wireless Solutions with Spansion Products application note
(publication number: Design_Scalable_Wireless_A0_E). Contact your local Spansion sales representative for
more details.
S71WS-P_00_A2 August 21, 2006
S71WS-P based MCP Products
3
Da ta
3.3
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In fo r mat io n)
NOR Flash and pSRAM Input/Output Descriptions
Amax-A0
4
Sh eet
=
NOR Flash Address inputs
DQ15-DQ0
=
Flash Data input/output, shared between NOR and ORNAND Flash. DQ0-DQ7 shared for x8 ORNAND
F-CE#
=
NOR Flash Chip-enable input #1. Asynchronous relative to CLK for Burst Mode.
OE#
=
Output Enable input. Asynchronous relative to CLK for Burst mode.
WE#
=
Write Enable input.
F-VCC
=
NOR Flash device power supply (1.7 V - 1.95V).
F-VCCQ
=
Input/Output Buffer power supply.
Ground
VSS
=
RFU
=
Reserved for Future Use
RDY
=
Flash ready output. Indicates the status of the Burst read. VOL = data valid. The Flash RDY pin is shared
with the WAIT pin of the pSRAM.
CLK
=
NOR Flash Clock, shared with CLK of burst-mode pSRAM.. The first rising edge of CLK in conjunction
with AVD# low latches the address input and activates burst mode operation. After the initial word is
output, subsequent rising edges of CLK increment the internal address counter. CLK should remain low
during asynchronous access.
AVD#
=
NOR Flash Address Valid input. Shared with AVD# of burst-mode pSRAM. Indicates to device that the
valid address is present on the address inputs.
VIL = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be
latched on rising edge of CLK.
VIH= device ignores address inputs
F-RST#
=
NOR Flash hardware reset input. VIL= device resets and returns to reading array data
F-WP#
=
NOR Flash hardware write protect input. VIL = disables program and erase functions in the four
outermost sectors.
F-ACC
=
NOR Flash accelerated input. At VHH, accelerates programming; automatically places device in unlock
bypass mode. At VIL, disables all program and erase functions. Should be at VIH for all other conditions.
Chip-enable input for pSRAM
R-CE#
=
R-CRE
=
Control Register Enable (pSRAM). For CellularRAM only.
R-VCC
=
pSRAM Power Supply
R-UB#
=
Upper Byte Control (pSRAM)
R-LB#
=
Lower Byte Control (pSRAM)
DNU
=
Do Not Use
S71WS-P based MCP Products
S71WS-P_00_A2 August 21, 2006
Da t a
4.
Sh ee t
(A d va nce
I nfo r ma ti on )
Ordering Information
The order number is formed by a valid combinations of the following:
S71WS
512
P
D0
HF
3
H
R
0
PACKING TYPE
0 = Tray
2 = 7” Tape and Reel
3 = 13” Tape and Reel
MODEL NUMBER 2
R = 80 MHz Flash Speed
V = 66 MHz Flash Speed
L = 108 MHz Flash Speed
MODEL NUMBER 1
H = CellularRAM Type 2, DYB=1, PPB = 0
S = CellularRAM Type 2, DYB=1, PPB=1
PACKAGE DESCRIPTOR
Depends on Character 12. For a more detailed description see Table 4.1.
PACKAGE TYPE & MATERIAL SET
HF = 1.2mm MCP FBGA, Pb-free
KF = 1.2mm POP FBGA, Pb-free
JF = 1.4mm MCP FBGA, Pb-free
CellularRAM DENSITY
D0 = 128 Mb
C0 = 64 Mb
PROCESS TECHNOLOGY
P = 90 nm, MirrorBitTM Technology
CODE FLASH DENSITY
256 = 256 Mb
512 = 512 Mb
PRODUCT FAMILY
S71WS Stacked Products (MCP/PoP)
1.8 V NOR Flash with pSRAM
Table 4.1 Character Position Descriptions (Sheet 1 of 2)
Character 14 Description
Character 12
Character 14
Package Area
Package Ball Count
0
7x9 mm
56
1
7x9 mm
80
2
8x11.6 mm
64
3
8x11.6 mm
84
4
9x12 mm
84
5
9x12 mm
115
6
9x12 mm
137
7
11x13 mm
84
8
11x13 mm
115
9
11x13 mm
137
H, J, or G
S71WS-P_00_A2 August 21, 2006
Raw Ball Size
0.35 mm
S71WS-P based MCP Products
5
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Table 4.1 Character Position Descriptions (Sheet 2 of 2)
Character 14 Description
Character 12
Character 14
Package Area
Package Ball Count
Raw Ball Size
A
11x11 mm
112
0.45 mm
B
11x11 mm
112
0.50 mm
D
12x12 mm
128
0.45 mm
F
12x12 mm
128
0.50 mm
G
14x14 mm
152
0.45 mm
H
14x14 mm
152
0.50 mm
J
15x15 mm
160
0.45 mm
K
4.1
K
15x15 mm
160
0.50 mm
L
17x17 mm
192
0.45 mm
M
17x17 mm
192
0.50 mm
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local
sales office to confirm availability of specific valid combinations and to check on newly released
combinations.
S71WS-P Valid Combinations
Device
Package &
Material Set
Package
Descriptor
Model
Number
HF
3
HR
Packing Type
HL
NOR Flash
Speed (MHz)
CellularRAM
Speed (MHz)
CellularRAM
Supplier
Package Type
Package
Markings
104
Type 2
8 x 11.6 mm
(Note 2)
108
S71WS512PD0
S71WS512PC0
0, 2, 3 (Note 1)
SV
80
66
Notes:
1. Packing Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading S and packing type designator from ordering part number.
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S71WS-P based MCP Products
S71WS-P_00_A2 August 21, 2006
Da t a
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Physical Dimensions
5.1
TLA084— 84-ball Fine Pitch Ball Grid Array (FBGA) 8x11.6mm Package
D1
A
D
eD
0.15 C
(2X)
10
9
SE 7
8
7
6
E
E1
5
4
eE
3
2
1
M L K J
INDEX MARK
PIN A1
CORNER
B
10
TOP VIEW
H G F
E D C
B A
7
SD
0.15 C
PIN A1
CORNER
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
0.08 C
SIDE VIEW
6
b
84X
0.15
0.08
M C A B
M C
NOTES:
PACKAGE
TLA 084
JEDEC
N/A
DxE
11.60 mm x 8.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.20
A1
0.17
---
---
A2
0.81
---
0.97
NOTE
PROFILE
BODY SIZE
E
8.00 BSC.
BODY SIZE
D1
8.80 BSC.
MATRIX FOOTPRINT
E1
7.20 BSC.
MATRIX FOOTPRINT
MD
12
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
84
0.35
0.40
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
BALL COUNT
0.45
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
eE
0.80 BSC.
BALL PITCH
eD
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
A2,A3,A4,A5,A6,A7,A8,A9
DEPOPULATED SOLDER BALLS
B1,B10,C1,C10,D1,D10,
E1,E10,F1,F10,G1,G10,
H1,H10,J1,J10,K1,K10,L1,L10,
M2,M3,M4,M5,M6,M7,M8,M9
S71WS-P_00_A2 August 21, 2006
2.
BALL HEIGHT
11.60 BSC.
n
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
BODY THICKNESS
D
Øb
1.
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
S71WS-P based MCP Products
3372-2 \ 16-038.22a
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Da ta
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Revision History
6.1
Revision A (February 21, 2006)
Initial release.
6.2
Revision A1 (April 12, 2006)
Added the S71WS512PC0
6.3
Revision A2 (August 21, 2006)
Added the S71WS512PD0 108MHz OPN
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
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S71WS-P based MCP Products
S71WS-P_00_A2 August 21, 2006