FAIRCHILD FDW2520C_08

FDW2520C
July 2008
FDW2520C
Complementary PowerTrench MOSFET
General Description
Features
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
•
Q1: N-Channel
RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 28 mΩ @ VGS = 2.5 V
6 A, 20 V.
•
Applications
Q2: P-Channel
–4.4A, 20 V.
• DC/DC conversion
• Power management
RDS(ON) = 35 mΩ @ VGS = –4.5 V
RDS(ON) = 57 mΩ @ VGS = –2.5 V
•
High performance trench technology for extremely
low RDS(ON)
•
Low profile TSSOP-8 package
• Load switch
G2
S2
S2
D2
Q1
G1
S1
S1
D1
TSSOP-8
Q2
1
8
2
7
3
6
4
5
Pin 1
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
- Continuous
- Pulsed
Power Dissipation
PD
TJ, TSTG
(Note 1a)
Q1
Q2
Units
20
–20
±12
6
30
±12
–4.4
–30
V
V
(Note 1a)
1.0
(Note 1b)
0.6
Operating and Storage Junction Temperature Range
A
W
–55 to +150
°C
(Note 1a)
125
°C/W
(Note 1b)
208
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
2520C
2008 Fairchild Semiconductor Corporation
Device
FDW2520C
Reel Size
Tape width
Quantity
13’’
12mm
2500 units
FDW2520C Rev C1(W)
TA = 25°C unless otherwise noted
Symbol
Test Conditions
Parameter
Type Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
===∆TJ
IDSS
IGSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
On Characteristics
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
VGS = +12 V, VDS = 0 V
VGS = +12 V, VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 6 A
VGS = 2.5 V, ID = 5 A
VGS = 4.5 V, ID = 6 A, TJ = 125°C
VGS = –4.5 V, ID = –4.4 A
VGS = –2.5 V, ID = –3.3 A
VGS = –4.5 V, ID = –4.4 A, TJ = 125°C
VGS = 4.5 V, VDS = 5 V
VGS = –4.5 V, VDS = –5 V
VDS = 5 V, ID = 6 A
VDS = –5 V, ID = –4.4 A
Q1
Q2
Q1
Q2
Q1
0.4
–0.4
Q1
Q2
Q1
Q2
Q1:
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Q2:
VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
V
14
–17
mV/°C
1
–1
+100
+100
µA
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
===∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
Q2
30
–30
1.0
–1.0
–3.3
3.1
14
19
19
28
43
39
1.5
–1.5
18
28
29
35
57
56
V
mV/°C
mΩ
mΩ
A
30
17
S
1325
1330
358
552
168
153
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q1:
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6 Ω
Q2:
VDD = –10 V, ID = –1 A,
VGS = –4.5V, RGEN = 6 Ω
Q1:
VDS = 10 V, ID = 6 A,
VGS = 4.5 V
Q2:
VDS = –5 V, ID = –4.4 A,
VGS = –4.5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6
12
11
19
32
60
19
37
14
14
2.6
3.0
3.7
3.9
20
25
40
40
60
100
34
70
20
20
ns
ns
ns
ns
nC
nC
nC
FDW2520C Rev C1(W)
FDW2520C
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 0.83 A (Note 2)
VGS = 0 V, IS = –0.83 A (Note 2)
Q1
Q2
Q1
Q2
0.5
–0.7
0.83
–0.83
1.2
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2520C Rev C1(W)
FDW2520C
Electrical Characteristics (continued)
FDW2520C
Typical Characteristics: Q1
VGS = 4.5V
3.0V
25
ID, DRAIN CURRENT (A)
2.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
30
2.0V
20
15
10
1.5V
5
1.8
VGS = 2.0V
1.6
1.4
2.5V
3.0V
1.2
3.5V
1
0
0.5
1
1.5
2
2.5
0
3
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
1.6
ID = 6A
VGS = 4.5V
ID = 3 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
0
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
0
150
1
o
2
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
VDS = 5V
TA = -55oC
IS, REVERSE DRAIN CURRENT (A)
100
30
o
25 C
25
ID, DRAIN CURRENT (A)
4.0V
125oC
20
15
10
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2520C Rev C1(W)
FDW2520C
Typical Characteristics: Q1
2000
ID = 6A
VDS = 5V
1750
4
10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
15V
3
2
1
1500
1250
1000
750
COSS
500
250
0
CRSS
0
0
2
4
6
8
10
12
14
0
16
4
Figure 7. Gate Charge Characteristics.
16
80
P(pk), PEAK TRANSIENT POWER (W)
1ms
RDS(ON) LIMIT
10ms
10
100ms
10s
1
1s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 208 oC/W
o
TA = 25 C
0.01
0.01
12
0.1
1
10
20
Figure 8. Capacitance Characteristics.
100
0.1
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
CISS
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
RθJA = 208 °C/W
TA = 25°C
60
40
20
0
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDW2520C Rev C1(W)
FDW2520C
Typical Characteristics: Q2
2
VGS = -4.5V
-3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
– ID, DRAIN CURRENT (A)
30
-3.0V
-4.0V
20
-2.5V
10
-2.0V
1.8
VGS = -2.5V
1.6
-3.0V
1.4
-3.5V
1.2
-4.0V
1
-4.5V
0.8
0
0
1
2
0
3
5
10
Figure 11. On-Region Characteristics.
1.2
1
0.8
0.6
0
25
50
75
100
125
0.1
0.08
0.06
TA = 125oC
0.04
TA = 25oC
0.02
0
150
1
TJ, JUNCTION TEMPERATURE (oC)
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = - 5V
25oC
-IS, REVERSE DRAIN CURRENT (A)
30
-ID, DRAIN CURRENT (A)
30
ID = -4.4 A
1.4
-25
25
0.12
ID = -4.4A
VGS = - 4.5V
-50
20
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
15
-ID, DRAIN CURRENT (A)
– VDS, DRAIN-SOURCE VOLTAGE (V)
25
125o
20
15
10
5
10
TA = 125oC
VGS = 0V
1
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0
1
2
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2520C Rev C1(W)
FDW2520C
Typical Characteristics: Q2
2100
VDS = - 5V
ID = - 4.4A
f = 1MHz
VGS = 0 V
1800
4
-10V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
–15V
3
2
1
CISS
1500
1200
900
COSS
600
300
0
CRSS
0
0
3
6
9
12
0
15
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
50
RDS(ON) LIMIT
1ms
10ms
10
1s
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
40
100ms
30
10s
1
0.1
20
DC
VGS = 4.5V
SINGLE PULSE
10
o
RθJA = 208 C/W
o
TA = 25 C
0.01
0
0.1
1
10
100
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA =208 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2520C Rev C1(W)
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not intended to be an exhaustive list of all such trademarks.
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EZSWITCH™ *
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FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
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ISOPLANAR™
MegaBuck™
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MicroFET™
MicroPak™
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Motion-SPM™
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OPTOPLANAR®
™
®
tm
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FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
SMART START™
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STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
SyncFET™
®
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tm
TinyBoost™
TinyBuck™
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TINYOPTO™
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35