tm FDS4675_F085 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). • –11 A, –40 V RDS(ON) = 0.013 Ω @ V GS = –10 V RDS(ON) = 0.017 Ω @ V GS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • Power management • High power and current handling capability • Load switch • Qualified to AEC Q101 • Battery protection • RoHS Compliant D D D D SO-8 S Pin 1 S S Absolute Maximum Ratings Symbol 4 6 3 7 2 8 1 G TA=25oC unless otherwise noted Parameter V DSS Drain-Source Voltage V GSS ID Gate-Source Voltage Drain Current – Continuous PD Power Dissipation for Single Operation (Note 1a) – Pulsed TJ , TSTG 5 Ratings –40 Units ±20 V A V –11 –50 (Note 1a) 2.4 (steady state) (Note 1b) 1.4 (Note 1c) 1.2 -55 to +175 °C Operating and Storage Junction Temperature Range W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 (steady state), 50 (10 sec) °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size FDS4675 FDS4675_F085 13’’ ©2010 Fairchild Semiconductor Corporation FDS4675_F085 Rev. A 1 Tape width 12mm Quantity 2500 units www.fairchildsemi.com FDS4675_F085 P-Channel PowerTrench® MOSFET February 2010 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –32 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –20 V V DS = 0 V –100 nA –3 V On Characteristics –40 ID = –250 µA, Referenced to 25°C V –34 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –10 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –11 A 44 S V DS = –20 V, f = 1.0 MHz V GS = 0 V, 4350 pF 622 pF 290 pF –1 –1.4 4.6 V GS = –10 V, ID = –11 A V GS = –4.5 V, ID = –9.5 A V GS =–10 V, ID =–11 A, TJ =125°C 10 13 15 mV/°C 13 17 21 –25 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –20 V, V GS = –4.5 V, 20 36 ns 29 46 ns Turn–Off Delay Time 95 152 ns tf Turn–Off Fall Time 60 96 ns Qg Total Gate Charge 40 56 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –20 V, V GS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –11 A, 11 nC 13 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –2.1 A Voltage (Note 2) –0.7 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS4675_F085 Rev. A 2 www.fairchildsemi.com FDS4675_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics VGS = -10V 40 2.2 -3.5V -6.0V -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 50 -3.0V 30 20 -2.5V 10 0 0 0.5 1 1.5 2 2.5 2 1.8 VGS = -3.0V 1.6 -3.5V 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0.8 3 0 10 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 -25 0 25 50 75 100 125 ID = -5.5A 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 150 2 2.5 o TJ , JUNCTION TEMPERATURE ( C) o TA = -55 C VDS = -5.0V 4 4.5 5 100 o 25 C 125 C o 40 3.5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. -I S, REVERSE DRAIN CURRENT (A) 50 3 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. -I D, DRAIN CURRENT (A) 50 0.05 ID = -11A VGS = -10V -50 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 30 -ID , DIRAIN CURRENT (A) 30 20 10 0 VGS = 0V 10 o T A = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 1 1.5 2 2.5 3 3.5 0 -V GS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. FDS4675_F085 Rev. A 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 www.fairchildsemi.com FDS4675_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 6000 VDS = -10V ID = -11A -20V 4 f = 1 MHz VGS = 0 V 5000 -30V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 CISS 4000 3000 2000 1000 0 0 10 20 30 40 C OSS C RSS 0 50 0 10 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 1ms 10ms 100ms 10s 1 1s DC VGS = -4.5V SINGLE PULSE o Rθ JA = 125 C/W 0.1 o T A = 25 C 0.01 0.1 1 10 SINGLE PULSE Rθ JA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 -VD S, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 40 50 100µs 10 30 Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) -I D, DRAIN CURRENT (A) 100 20 -VD S, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA (t) = r(t) + RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 SINGLE PULSE 0.001 0.0001 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4675_F085 Rev. A 4 www.fairchildsemi.com FDS4675_F085 P-Channel PowerTrench® MOSFET Typical Characteristics tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FDS4675_F085 Rev. A 5 www.fairchildsemi.com FDS4675_F085 P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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