FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). • –9.2 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V RDS(ON) = 15 mΩ @ VGS = –2.5 V RDS(ON) = 21.5 mΩ @ VGS = –1.8 V • Rds ratings for use with 1.8 V logic Applications • ESD protection diode • Load switch • Low gate charge • Motor drive • High performance trench technology for extremely low RDS(ON) • DC/DC conversion • Power management • Low profile TSSOP-8 package D S S D G S S D TSSOP-8 5 4 6 3 7 2 8 1 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –9.2 A – Continuous (Note 1) – Pulsed PD –50 Power Dissipation TJ, TSTG (Note 1a) 1.4 (Note 1b) 1 W –55 to +150 °C (Note 1a) 96 °C/W (Note 1b) 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 254PZ FDW254PZ 13’’ 12mm 2500 units 2008 Fairchild Semiconductor Corporation FDW254PZ Rev C1 (W) FDW254PZ July 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –11 mV/°C Off Characteristics ID = –250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±8 V, VDS = 0 V ±10 µA ID = –250 µA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C –0.4 –0.6 2 VGS = –4.5 V, ID = –9.2 A VGS = –2.5 V, ID = –7.9 A VGS = –1.8 V, ID = –6.5 A VGS=–4.5 V, ID =–9.2 A, TJ=125°C 9 11 14 12 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –9.2 A –1.5 V mV/°C 12 15 21.5 18 mΩ –50 A 54 S 5880 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VDS = –10 V, f = 1.0 MHz V GS = 0 V, 990 pF 560 pF Ω VGS = 15 mV, f = 1.0 MHz 4.9 VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 15 27 ns 15 27 ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 210 336 ns tf Turn–Off Fall Time 100 160 ns Qg Total Gate Charge 60 96 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –9.2 A, 7 nC 13 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = –1.2 A (Note 2) IF = –9.2 A, diF/dt = 100 A/µs –0.5 –1.2 A –1.2 V 35 ns 21 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 96°C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4. b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < µs, Duty cycle < 2.0%. FDW254PZ Rev. C1 (W) FDW254PZ Electrical Characteristics FDW254PZ Typical Characteristics 60 2.8 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.5V -ID, DRAIN CURRENT (A) 50 -3.5V -3.0V 40 -2.0V 30 -1.8V 20 10 0 2.6 VGS = - 1.8V 2.4 2.2 2 -2.0V 1.8 1.6 -2.5V 1.4 -3.0V 1.2 -3.5V -4.5V 1 0.8 0 0.5 1 1.5 2 2.5 0 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 50 60 0.035 ID = -9.2A VGS = - 4.5V 1.4 ID = -4.6A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 0.03 0.025 TA = 125oC 0.02 0.015 TA = 25oC 0.01 0.005 -50 -25 0 25 50 75 100 125 150 1 2 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 60 25oC 50 -ID, DRAIN CURRENT (A) 30 -ID, DRAIN CURRENT (A) o 125 C 40 30 20 10 0 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW254PZ Rev. C1 (W) FDW254PZ Typical Characteristics 8000 ID = -9.2A VDS = -5V -10V -15V 3 2 CISS 6000 5000 4000 3000 2000 1 COSS 1000 CRSS 0 0 0 10 20 30 40 50 60 0 5 Qg, GATE CHARGE (nC) P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms 10 100ms 1s 10s DC 1 VGS = -4.5V SINGLE PULSE RθJA = 114oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 20 10 50 SINGLE PULSE RθJA = 114°C/W TA = 25°C 40 30 20 10 0 0.01 100 0.1 1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 RDS(ON) LIMIT 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V 7000 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 114 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW254PZ Rev. C1(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® tm PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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