FAIRCHILD FDW254PZ_08

FDW254PZ
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
• –9.2 A, –20 V.
RDS(ON) = 12 mΩ @ VGS = –4.5 V
RDS(ON) = 15 mΩ @ VGS = –2.5 V
RDS(ON) = 21.5 mΩ @ VGS = –1.8 V
• Rds ratings for use with 1.8 V logic
Applications
• ESD protection diode
• Load switch
• Low gate charge
• Motor drive
• High performance trench technology for extremely
low RDS(ON)
• DC/DC conversion
• Power management
• Low profile TSSOP-8 package
D
S
S
D
G
S
S
D
TSSOP-8
5
4
6
3
7
2
8
1
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–9.2
A
– Continuous
(Note 1)
– Pulsed
PD
–50
Power Dissipation
TJ, TSTG
(Note 1a)
1.4
(Note 1b)
1
W
–55 to +150
°C
(Note 1a)
96
°C/W
(Note 1b)
208
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
254PZ
FDW254PZ
13’’
12mm
2500 units
2008 Fairchild Semiconductor Corporation
FDW254PZ Rev C1 (W)
FDW254PZ
July 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
–11
mV/°C
Off Characteristics
ID = –250 µA
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±8 V,
VDS = 0 V
±10
µA
ID = –250 µA
On Characteristics
–20
V
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
–0.4
–0.6
2
VGS = –4.5 V,
ID = –9.2 A
VGS = –2.5 V,
ID = –7.9 A
VGS = –1.8 V,
ID = –6.5 A
VGS=–4.5 V, ID =–9.2 A, TJ=125°C
9
11
14
12
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –9.2 A
–1.5
V
mV/°C
12
15
21.5
18
mΩ
–50
A
54
S
5880
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
990
pF
560
pF
Ω
VGS = 15 mV,
f = 1.0 MHz
4.9
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
15
27
ns
15
27
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
210
336
ns
tf
Turn–Off Fall Time
100
160
ns
Qg
Total Gate Charge
60
96
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V,
VGS = –4.5 V
ID = –9.2 A,
7
nC
13
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V,
IS = –1.2 A
(Note 2)
IF = –9.2 A,
diF/dt = 100 A/µs
–0.5
–1.2
A
–1.2
V
35
ns
21
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
RθJA is 96°C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b)
RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < µs, Duty cycle < 2.0%.
FDW254PZ Rev. C1 (W)
FDW254PZ
Electrical Characteristics
FDW254PZ
Typical Characteristics
60
2.8
VGS = -4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-2.5V
-ID, DRAIN CURRENT (A)
50
-3.5V
-3.0V
40
-2.0V
30
-1.8V
20
10
0
2.6
VGS = - 1.8V
2.4
2.2
2
-2.0V
1.8
1.6
-2.5V
1.4
-3.0V
1.2
-3.5V
-4.5V
1
0.8
0
0.5
1
1.5
2
2.5
0
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
50
60
0.035
ID = -9.2A
VGS = - 4.5V
1.4
ID = -4.6A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.3
1.2
1.1
1
0.9
0.8
0.7
0.03
0.025
TA = 125oC
0.02
0.015
TA = 25oC
0.01
0.005
-50
-25
0
25
50
75
100
125
150
1
2
TJ, JUNCTION TEMPERATURE (oC)
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
TA = -55oC
-IS, REVERSE DRAIN CURRENT (A)
60
25oC
50
-ID, DRAIN CURRENT (A)
30
-ID, DRAIN CURRENT (A)
o
125 C
40
30
20
10
0
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW254PZ Rev. C1 (W)
FDW254PZ
Typical Characteristics
8000
ID = -9.2A
VDS = -5V
-10V
-15V
3
2
CISS
6000
5000
4000
3000
2000
1
COSS
1000
CRSS
0
0
0
10
20
30
40
50
60
0
5
Qg, GATE CHARGE (nC)
P(pk), PEAK TRANSIENT POWER (W)
100µs
1ms
10ms
10
100ms
1s
10s
DC
1
VGS = -4.5V
SINGLE PULSE
RθJA = 114oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
20
10
50
SINGLE PULSE
RθJA = 114°C/W
TA = 25°C
40
30
20
10
0
0.01
100
0.1
1
10
100
1000
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
15
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
-ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
7000
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 114 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW254PZ Rev. C1(W)
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™
®
tm
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FastvCore™
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®
tm
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®
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tm
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35