STMICROELECTRONICS 2STL1360

2STX1360
2STL1360
Low voltage fast-switching NPN power bipolar transistors
Features
■
Very low collector-emitter saturation voltage
■
High current gain characteristic
■
Fast-switching speed
Applications
■
Emergency lighting
■
Led
■
CCFL drivers (back lighting)
■
Voltage regulation
■
Relay driver
TO-92
Figure 1.
Description
TO-92L
Internal schematic diagram
The devices are NPN transistors manufactured
using new “PB-HCD” (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
2STX1360
2STL1360
X1360
L1360
TO-92
TO-92L
Bulk
Bulk
July 2007
Rev 2
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www.st.com
10
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
Value
Unit
2STX1360 2STL1360
Unit
VCBO
Collector-base voltage (IE = 0)
80
V
VCEO
Collector-emitter voltage (IB = 0)
60
V
VEBO
Emitter-base voltage (IC = 0)
6
V
Collector current
3
A
ICM
Collector peak current (tP < 5ms)
5
A
Ptot
Total dissipation at T amb = 25°C
Tstg
Storage temperature
IC
TJ
Table 3.
Symbol
Rthj-amb
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2STX1360 2STL1360
1
1.2
W
-65 to 150
°C
150
°C
Value
Unit
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-ambient
__max
TO-92
TO-92L
Unit
125
104.2
°C/W
2STX1360 2STL1360
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = 80V
100
nA
IEBO
Emitter cut-off current
(IC =0)
VEB = 6V
100
nA
VBE
Base-emitter voltage
VCE = 2V
IC = 100mA
670
730
mV
Collector-emitter
saturation voltage
IC = 2A
IB = 100mA
150
300
mV
mV
V
VCE(sat) (1)
VBE(sat) (1)
hFE (1)
Base-emitter saturation
voltage
DC current gain
630
IC = 3A
IB = 150mA
210
500
IC = 2A
IB = 100mA
0.89
1.2
IC = 0.1A
VCE = 2V
80
IC = 1A
VCE = 2V
160
280
400
IC = 3A
17
20
ns
RESISTIVE LOAD
td
Delay time
VCC = 10V
tr
Rise time
IB1 = -IB2 = 300mA
81
100
ns
ts
Storage time
(see figure 9)
620
720
ns
tf
Fall time
54
65
ns
fT
Transition frequency
IC = 0.1A
VCE = 10V
130
MHz
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain
Figure 3.
DC current gain
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Electrical characteristics
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2STX1360 2STL1360
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Figure 6.
Resistive load switching time Figure 7.
Figure 8.
Reverse biased safe
operating area
Base-emitter saturation
voltage
Resistive load switching time
2STX1360 2STL1360
2.2
Electrical characteristics
Test circuit
Figure 9.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data
3
2STX1360 2STL1360
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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2STX1360 2STL1360
Package mechanical data
TO-92 BULK SHIPMENT MECHANICAL DATA
DIM.
mm.
MIN.
TYP
MAX.
A
4.32
4.95
b
0.36
0.51
D
4.45
4.95
E
3.30
3.94
e
2.41
2.67
e1
1.14
1.40
L
12.70
15.49
R
2.16
2.41
S1
0.92
1.52
W
0.41
0.56
V
5O
0102782 C
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Package mechanical data
2STX1360 2STL1360
TO-92L MECHANICAL DATA
DIM.
mm.
MIN.
TYP
MAX.
A
7.80
8.20
b
0.35
0.45
D
4.70
5.10
D1
4
E
3.70
4.10
e
2.44
2.64
e1
1.27
L
13.30
14.30
S1
1.28
1.58
W
0.35
0.55
7854933 A
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2STX1360 2STL1360
4
Revision history
Revision history
Table 5.
Revision history
Date
Revision
Changes
20-Oct-2006
1
Initial release
16-Jul-2007
2
Figure 2, 3,4,5,6,7 and figure 8 added.
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2STX1360 2STL1360
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