74H1G66 SINGLE BILATERAL SWITCH ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28% VCC (MIN.) LOW "ON" RESISTANCE: RON = 50Ω (TYP.) AT VCC = 9V II/O = 100µA SINE WAVE DISTORTION: 0.042% AT VCC = 4V f = 1KHz WIDE OPERATING RANGE: VCC (OPR) = 2V TO 12V DESCRIPTION The 74H1G66 is a CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed performance combined with true CMOS low power consumption. The C input is provided to control the switch and it’s compatible with standard CMOS output; the switch is ON (port I/O is connected to Port O/I) when the C input is held high and OFF (high SOT23-5L ORDER CODES PACKAGE T&R SOT23-5L 74H1G66STR impedance state exists between the two ports) when C is held low. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/10 74H1G66 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1 2 3 I/O O/I GND 4 C Independent Input/Output Independent Output/Input Ground (0V) Enable Input (Active HIGH) 5 VCC Positive Supply Voltage TRUTH TABLE C SWITCH FUNCTION H L ON OFF * * High Impedance State ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCC Supply Voltage VI/O DC Input/Output Voltage Value Unit -0.5 to +13.0 V -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 V VIC DC Control Input Voltage IIOK DC Input/Output Diode Current ± 20 mA IIK DC Control Input Diode Current ± 20 mA IO DC Output Source Sink Current per Output Pin ± 25 mA ± 50 mA ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) V 500 (*) mW -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Unit 2 to 12 V VI Control Input Voltage 0 to VCC V VI/O Input/Output Voltage 0 to VCC V Top Operating Temperature Input Rise and Fall Time on control pin tr, tf 2/10 Value -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns VCC = 10.0V 0 to 250 ns 74H1G66 DC SPECIFICATIONS Test Condition Symbol VIH VIL RON RON Parameter High Level Input Voltage Low Level Input Voltage ON Resistance ON Resistance IOFF Input/Output Leakage Current (SWITCH OFF) IIZ Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) Control Input Leakage Current Quiescent Supply Current IIN ICC TA = 25°C VCC (V) 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 4.5 9.0 12.0 4.5 9.0 12.0 12.0 Value Min. Typ. Max. 1.5 3.15 6.3 8.4 VIC = VIH VI/O = VCC to GND II/O ≤ 1mA VIC = VIH VI/O = VCC or GND II/O ≤ 1mA VOS = VCC to GND VIS = VCC to GND VIC = VIL -40 to 85°C -55 to 125°C Min. Min. Max. 1.5 3.15 6.3 8.4 96 55 45 70 50 45 Unit Max. 1.5 3.15 6.3 8.4 V 0.5 1.35 2.7 3.6 170 85 80 100 75 70 ±0.1 0.5 1.35 2.7 3.6 200 100 90 130 95 90 ±1 0.5 1.35 2.7 3.6 250 150 120 160 115 110 ±2 µA V Ω Ω 12.0 VOS = VCC to GND VIC = VIH ±0.1 ±1 ±2 µA 6.0 VIC = 5.5V or GND ± 0.1 ± 1.0 ± 1.0 µA 6.0 9.0 12.0 VI = VCC or GND 1 4 8 10 40 80 20 80 160 µA 3/10 74H1G66 AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns) Test Condition Symbol ΦI/O Parameter Phase Difference Between Input and Output tPLZ tPHZ Output Disable Time tPZL tPZH Output Enable Time Maximum Control Input Frequency Value TA = 25°C VCC (V) Min. 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 RL = 500 Ω RL = 1 KΩ RL = 1 KΩ CL = 15pF VO = 1/2VCC Typ. Max. 10 4 3 3 18 8 6 6 20 10 8 8 30 30 30 30 50 10 8 7 100 20 12 12 115 23 20 18 -40 to 85°C -55 to 125°C Min. Min. Max. 65 15 13 10 125 25 22 18 145 29 25 22 Unit Max. 75 18 16 12 150 30 27 25 175 35 30 27 ns ns ns MHz CAPACITIVE CHARACTERISTICS Test Condition Symbol Value TA = 25°C Parameter Min. CIN Input Capacitance CI/O Switch Terminal Capacitance Feed through Capacitance Power Dissipation Capacitance (note 1) CIOS CPD Typ. Max. 5 10 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF 10 pF 0.5 pF 15 pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC 4/10 74H1G66 ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C) Test Condition Symbol Parameter Sine Wave Distortion (THD) fMAX Frequency Response (Switch ON) VCC (V) VIN (Vp-p) 4.5 9.0 4.5 9.0 4 8 Value Unit Typ. fIN = 1 KHz RL = 10 KΩ, CL = 50 pF Adjust fIN voltage to obtain 0 dBm at VOS. Increase fIN Frequency until dB meter reads -3dB RL = 50Ω, CL = 10 pF 0.04 0.04 150 180 MHz % Feed through Attenuation (Switch OFF) 4.5 9.0 VIN is centered at VCC/2 Adjust fIN Voltage to obtained 0dBm at VIS RL = 600Ω, CL = 50 pF, fIN = 1KHz sine wave -60 -60 dB Crosstalk (Control Input to Signal Output) 4.5 9.0 RL = 600Ω, CL = 50 pF, fIN = 1KHz square wave tr = tf = 6ns 60 60 mV 5/10 74H1G66 SWITCHING CARACTERISTICS TEST CIRCUIT CROSSTALK (control to output BANDWIDTH AND FEEDTHROUGH ATTENUATION MAXIMUM CONTROL FREQUENCY 6/10 74H1G66 CHANNEL RESISTANCE (RON) ICC (Opr.) 7/10 74H1G66 SOT23-5L MECHANICAL DATA mm. mils DIM. MIN. MAX. MIN. TYP. MAX. A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 e 0.95 37.4 e1 1.9 74.8 L 8/10 TYP 0.35 0.55 13.7 21.6 74H1G66 Tape & Reel SOT23-xL MECHANICAL DATA mm. inch DIM. MIN. TYP A MAX. MIN. TYP. 180 13.0 7.086 C 12.8 D 20.2 0.795 N 60 2.362 T 13.2 MAX. 0.504 0.512 14.4 0.519 0.567 Ao 3.13 3.23 3.33 0.123 0.127 0.131 Bo 3.07 3.17 3.27 0.120 0.124 0.128 Ko 1.27 1.37 1.47 0.050 0.054 0.0.58 Po 3.9 4.0 4.1 0.153 0.157 0.161 P 3.9 4.0 4.1 0.153 0.157 0.161 9/10 74H1G66 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 10/10