FDD4685_F085 ® P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Features Applications Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.4A Inverter Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A Power Supplies Typ Qg(TOT) = 19nC at VGS = -5V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 ©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev. C 1 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET December 2010 Symbol VDSS Drain to Source Voltage VGS ID Parameter Ratings -40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC<90oC, VGS = 10V) -32 Pulsed EAS PD A See Figure 4 Single Pulse Avalanche Energe (Note 1) 121 mJ Power Dissipation 83 W Dreate above 25oC 0.56 W/oC -55 to +175 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Maximum Thermal Resistance Junction to Case 2 Maximum Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 1.8 o C/W 40 o C/W Package Marking and Ordering Information Device Marking FDD4685 Device FDD4685_F085 Package TO252 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units -40 - - V - mV/°C Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = -250μA, VGS = 0V ΔBVDSS ΔTJ ID = -250μA, referenced to 25°C - -33 IDSS Zero Gate Voltage Drain Current VDS = -32V, - - -1 μA IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA -1 -1.6 -3 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250μA, referenced to 25°C - 4.9 - mV/°C rDS(on) gFS Drain to Source On Resistance Forward Transconductance ID = -8.4A, VGS= -10V - 23 27 ID = -7A, VGS= -4.5V - 30 35 ID = -8.4A, VGS= -10V, TJ = 150oC - 38 45 ID = –8.4A, VDS = –5V, - 23 - VDS = -20V, VGS = 0V, f = 1MHz - 1790 2380 pF - 260 345 pF pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDD4685_F085 Rev. C f = 1MHz VDD = -20V, VGS = -5V ID = -8.4A 2 - 140 205 - 4 - Ω - 19 27 nC - 5.6 - nC - 6.1 - nC www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units - 8 16 ns - 15 27 ns - 34 55 ns - 14 26 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = -20V, ID = -8.4A VGS = -10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = -8.4A, VGS=0V ISD = -8.4A, dISD/dt = 100A/μs - -0.85 -1.2 V - 30 45 ns - 31 47 nC Notes: 1: Starting TJ= 25°C, L = 3mH, IAS= 9A, VGS= 10V, VDD= 40V during the inductor charging time and 0V during the time in avalanche. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD4685_F085 Rev. C 3 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 50 1.2 1.0 0.8 0.6 0.4 0.2 CURRENT LIMITED BY PACKAGE 40 30 VGS = -10V 20 VGS = -4.5V 10 o RθJC = 1.8 C/W 0.0 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 25 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 0.01 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V TC = 25oC -IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD4685_F085 Rev. C 4 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 200 -IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 1000 100 100us 10 SINGLE PULSE TJ = MAX RATED TC = 25oC 1ms 1 10ms DC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 90 1 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 VDD = -5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 100 Figure 6. Unclamped Inductive Switching Capability TJ = -55oC 60 TJ = 25oC 40 TJ = 175oC 20 0 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics ID = -8.4A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 100 80 60 TJ = 175oC 40 20 TJ = 25oC 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD4685_F085 Rev. C VGS = -10V 60 VGS = -6V VGS = -4.5V 40 VGS = -4V 20 VGS = -3V 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 120 80 0 6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = -8.4A VGS = -10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 1.3 1.15 NORMALIZED GATE THRESHOLD VOLTAGE 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = -250μA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature -VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1000 Coss Crss f = 1MHz VGS = 0V 10 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 13. Capacitance vs Drain to Source Voltage FDD4685_F085 Rev. C 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 100 ID = -250uA 10 VDD = -10V 8 VDD = -20V 6 VDD = -30V 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET Typical Characteristics *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 FDD4685_F085 Rev. C 7 www.fairchildsemi.com FDD4685_F085 P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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