FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ Features General Description RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability RoHS Compliant Applications DC/DC converters D D D D SO-8 S ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 S S G 1 5 4 6 3 7 2 8 1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET January 2010 TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Continuous (TA = 25oC, VGS = 10V, RθJA = 85oC/W) 9 A Continuous (TA = 25 C, VGS = 4.5V, RθJA = 85 C/W) 8.2 A Pulsed 48 A 79 mJ Drain Current ID o o EAS Single Pulse Avalanche Energy (Note 1) PD Power dissipation TJ, TSTG Operating and Storage Temperature 1.47 W o -55 to 150 C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 o C/W RθJA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 o C/W Package Marking and Ordering Information Device Marking FDS6692A Device FDS6692A Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 30 - - V - 21 - mV/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temp. Coefficient ID = 250µA, Referenced to 25oC IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current VDS = 24V VGS = 0V TJ = 150oC VGS = ±20V - - 1 - - 250 - - ±100 nA µA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V ∆VGS(TH) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC - -5 - mV/oC ID = 9A, VGS = 10V - 8.2 11.5 Drain to Source On Resistance ID = 8.2A, VGS = 4.5V - 11 14.5 ID = 9A, VGS = 10V, TJ = 150oC - 13 19 VDS = 15V, VGS = 0V, f = 1MHz - 1210 1610 pF - 330 440 pF pF RDS(ON) mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance - 138 210 RG Gate Resistance f = 1MHz - 2.0 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 22 29 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau - 2.1 - nC Qgd Gate to Drain “Miller” Charge - 4.8 - nC FDS6692A Rev. A2 2 VDD = 15V ID = 9A Ig = 1.0mA - 12 16 - 0.93 1.2 nC - 3 - nC www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings tON Turn-On Time - - 60 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 32 - ns td(OFF) Turn-Off Delay Time - 33 - ns tf Fall Time - 13 - ns tOFF Turn-Off Time - - 69 ns ISD = 9A - - 1.25 V ISD = 2.1A - - 1.0 V VDD = 15V, ID = 9A VGS = 10V, RGS = 6.2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 9A, dISD/dt=100A/µs - - 27 ns QRR Reverse Recovered Charge ISD = 9A, dISD/dt=100A/µs - - 17 nC Notes: 1: Starting TJ = 25°C, L = 0.3mH, IAS = 23A, VDD = 27V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board FDS6692A Rev. A2 3 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET Switching Characteristics (VGS = 10V) 24 2.8 21 RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 18 15 WAVEFORMS IN DESCENDING ORDER: 12 10V 9 5.0V 4.0V 6 3.5V 3 3.0V 0 0.1 0 0.3 0.2 0.4 2.6 2.4 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3.0V 2.2 4.5V 2 1.8 3.5V 1.6 4.0V 1.4 1.2 5.0V 1 10V 0.8 0.5 0 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 ID =9A 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = 9A VGS =10V 1.2 1.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.8 0.018 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.016 TJ =150oC 0.014 0.012 TJ =25oC 0.01 0.008 0.006 0.6 - 80 - 40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 2 4 8 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 24 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 21 18 VDS = 6V 15 TJ = 25oC 12 9 10 IS = 9A IS, REVERSE CURRENT (A) RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 ID, DRAIN CURRENT (A) 24 20 12 6 TJ = 150oC 6 TJ = -55oC 10 TJ = 150oC 1 0.1 TJ = 25oC TJ = - 55oC 0.01 3 0 0 1 2 3 0.001 4 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDS6692A Rev. A2 0.2 0.6 0.8 1.0 0.4 VSD, BODY DIODE FORWARD VOLTAGE 1.2 Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 4 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 10 CISS VGS, GATE- SOURCE VOLTAGE VDD =15V 8 1000 COSS CAPACITANCE (pF) 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 9A ID = 1A 2 0 0 10 5 15 20 CRSS f = 1MHz VGS = 0V 100 25 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.03 Qg, GATE CHARGE (nC) Figure 8. Capacitance Characteristics 20 100 10 10 ID, DRAIN TCURRENT (A) IAS, AVALANCHE CURRENT (A) Figure 7. Gate Charge Characteristics TJ = 25 oC TJ = 100 oC TJ = 150 oC 1 0.01 0.1 1 10 100 1000 100µs 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.1 DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 Figure 9. Unclamped Inductive Switching Capability 100 Figure 10. Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 2000 10 CURRENT LIMITED BY PACKAGE 9 ID, DRAIN TCURRENT (A) 1ms 10ms SINGLE PULSE TJ = MAX RATED TA = 25oC 0.01 tAV, TIME IN AVALANCHE (ms) 1000 8 7 VGS = 10V 6 5 VGS = 4.5V 4 3 2 RθJA = 85oC/W 1 0 30 0 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) o TA = 25 C 100 10 1 -5 10 -4 10 -3 10 -2 10 -1 10 0 1 10 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature FDS6692A Rev. A2 SINGLE PULSE o RθJA = 85 C/W Figure 12. Single Maximum Power Dissipation 5 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Normalized Thermal impedance ZθJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 1E-3 -5 10 SINGLE PULSE -4 10 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RθJA + TC -2 -1 10 10 0 10 1 10 2 10 3 10 t Rectangular Pulse Duration Figure 13. Transient Thermal Response Curve FDS6692A Rev. A2 6 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET 2 1 tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I46 FDS6692A Rev. A2 7 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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