FDC642P_F085 ® P-Channel PowerTrench MOSFET -20V, -4A, 100mΩ Features Applications Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Load switch Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A Battery protection Fast switching speed Power management Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). RoHS Compliant Qualified to AEC Q101 D D S SuperSOT TM-6 ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A D D G 1 S 4 3 G D 5 2 D D 6 1 D www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET June 2009 Symbol VDSS Drain to Source Voltage VGS ID Parameter Ratings -20 Units V Gate to Source Voltage ±8 V Drain Current Continuous (VGS = 4.5V) -4 Pulsed -20 A EAS Single Pulse Avalanche Energy 72 PD Power Dissipation 1.2 W -55 to +150 oC TJ, TSTG Operating and Storage Temperature mJ Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case o 30 Thermal Resistance Junction to Ambient SSOT-6, 1in2 copper pad area C/W oC/W 103 Package Marking and Ordering Information Device Marking FDC642P Device FDC642P_F085 Package SSOT-6 Reel Size 7” Tape Width 8mm Quantity 3000 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -20 - - V IDSS Zero Gate Voltage Drain Current VDS = -16V, - - -1 µA IGSS Gate to Source Leakage Current VGS = ±8V, - - ±100 nA V On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA -0.4 -0.7 -1.5 ID = -4A, VGS = -4.5V - 52.5 65 ID = -3.2A, VGS = -2.5V - 75.3 100 ID = -4A, VGS = -4.5V, TJ = 125oC - 72.7 105 ID = -4A, VDD = -5V - 10 - VDS = -10V, VGS = 0V, f = 1MHz - 630 - pF - 160 - pF pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg(TOT) Total Gate Charge at -4.5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDC642P_F085 Rev. A f = 1MHz VDD = -10V, ID = -4A VGS = -4.5V 2 - 65 - - 4.4 - Ω - 6.9 9.0 nC - 1.2 - nC - 1.8 - nC www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 23 ns td(on) Turn-On Delay Time - 7.3 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6Ω - 5.5 - ns - 23.2 - ns Fall Time - 9.6 - ns Turn-Off Time - - 53 ns Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = -1.3A IF = -1.3A, dSD/dt = 100A/µs - -0.7 -1.2 V - 17 22 ns - 5.6 7.3 nC Notes: 1: Starting TJ = 25oC, L = 14.1mH, IAS = -3.2A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDC642P_F085 Rev. A 3 www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25oC unless otherwise noted 1.0 -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 4 1.2 0.8 0.6 0.4 0.2 3 VGS = -4.5V 2 VGS = -2.5V 1 o Max RθJA = 103 C/W 0 0.0 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 25 150 50 75 100 125 TA, CASE TEMPERATURE (oC) 150 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o Max RθJA = 103 C/W 0.01 -3 10 -2 10 -1 2 10 1 10 t, RECTANGULAR PULSE DURATION (s) 3 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 100 -IDM, PEAK CURRENT (A) TA = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = -4.5V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - TA I = I25 125 10 SINGLE PULSE o Max RθJA = 103 C/W 1 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION(s) 2 10 3 10 Figure 4. Peak Current Capability FDC642P_F085 Rev. A 4 www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 10 -IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 100 10 1ms 1 10ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.01 SINGLE PULSE TJ = MAX RATED o TA = 25 C 100ms 1s DC 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 5 STARTING TJ = 25oC STARTING TJ = 150oC 1 0.01 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 5. Forward Bias Safe Operating Area 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = -4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20 16 VDD = -5V TJ = -55oC TJ = 150oC 12 TJ = 25oC 8 4 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) VGS = -2.5V 8 VGS = -2V 4 VGS = -1.5V 1 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 Figure 8. Saturation Characteristics PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 800 ID = -4A 600 400 o TJ = 150 C 200 o TJ = 25 C 0 4 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDC642P_F085 Rev. A VGS = -3V 12 0 1000 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) VGS = -3.5V 0 4 Figure 7. Transfer Characteristics 1 16 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 ID = -4A 0.6 -75 VGS = -4.5V -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET Typical Characteristics 1.10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 VGS = VDS ID = -250µA 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Coss 100 Crss f = 1MHz VGS = 0V 40 Figure 13. Capacitance vs Drain to Source Voltage FDC642P_F085 Rev. A 0.95 0.90 -80 -VGS, GATE TO SOURCE VOLTAGE (V) CAPACITANCE (pF) Ciss 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.00 -40 0 40 80 120 160 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 4000 10 0.1 1.05 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = -250µA 4.5 ID = -4A 3.6 VDD = -10V 2.7 VDD = -5V VDD = -15V 1.8 0.9 0.0 0 2 4 6 Qg, GATE CHARGE (nC) 8 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET Typical Characteristics *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDC642P_F085 Rev. A 7 www.fairchildsemi.com FDC642P_F085 P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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