BC141-16 ® GENERAL PURPOSE TRANSISTOR DESCRIPTION The BC141-16 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A. The complementary PNP type is the BC161-16. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC Collector Current IB Base Current P tot T stg Tj Total Dissipation at T amb ≤ 25 o C at T C ≤ 25 o C Storage Temperature Max. Operating Junction Temperature January 2003 Value Unit 100 V 60 V 7 V 1 A 0.1 A 0.65 3.7 W W -55 to 175 o C 175 o C 1/5 BC141-16 THERMAL DATA R thj-case R thj-amb o 35 200 Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient o C/W C/W Max ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0) Test Conditions V CE = 60 V V CE = 60 V Min. Typ. T C = 150 o C Max. Unit 100 100 nA µA V (BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 100 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 30 mA 60 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA 7 V V CE(sat) ∗ I C = 100 mA I C = 500 mA IC = 1 A IB = 10 mA IB = 50 mA I B = 100 mA 0.1 0.35 0.6 1 V V V 1.25 1.8 V 90 160 30 250 Collector-Emitter Saturation Voltage V BE(on) ∗ Base-Emitter On Voltage IC = 1 A V CE = 1 V h FE ∗ DC Current Gain I C = 100 µA I C = 100 mA IC = 1 A V CE = 1 V V CE = 1 V V CE = 1 V 100 V CE = 10 V 50 fT Transition Frequency I C = 50 mA Collector-Base Capacitance IE = 0 t on Turn-on Time I C = 100 mA t off Turn-off Time I C = 100 mA C CBO ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 V CB = 5 V f = 1MHz I B1 = 5 mA I B1 = I B2 = 5 mA MHz 12 25 pF 250 ns 850 ns BC141-16 Collector-emitter Saturation Voltage. Base-emitter Voltage. DC Curent Gain. Transiition Frequency. 3/5 BC141-16 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 4/5 BC141-16 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5