STMICROELECTRONICS 2N5886

2N5886
®
HIGH CURRENT SILICON NPN POWER TRANSISTOR
■
■
STMicroelectronics PREFERRED
SALESTYPE
HIGH CURRENT CAPABILITY
APPLICATIONS
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■
DESCRIPTION
The 2N5886 is a silicon Epitaxial-Base NPN
power transistor mounted in Jedec TO-3 metal
case. It is inteded for use in power linear
amplifiers and switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
80
V
V CEO
Collector-Emitter Voltage (I B = 0)
80
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
25
A
Collector Peak Current
50
A
IC
I CM
IB
Base Current
7.5
A
P tot
Total Dissipation at T c ≤ 25 o C
200
W
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
January 2000
-65 to 200
o
C
200
o
C
1/4
2N5886
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
0.875
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
1
10
mA
mA
I CEV
Collector Cut-off
Current (V BE = -1.5V)
V CE = 80 V
V CE = 80 V
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 80 V
1
mA
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 40 V
2
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
T c = 150 o C
I C = 200 mA
80
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 15 A
I C = 25 A
I B = 1.5 A
I B = 6.25 A
1
4
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 25 A
I B = 6.25 A
2.5
V
V BE ∗
Base-Emitter Voltage
I C = 10 A
V CE = 4 V
1.5
V
h FE ∗
DC Current Gain
IC = 3 A
I C = 10 A
I C = 25 A
V CE = 4 V
V CE = 4 V
V CE = 4 V
hfe
Small Signal Current
Gain
IC = 3 A
V CE = 4 V
f = 1KHz
20
fT
Transition frequency
IC = 1 A
V CE = 10 V
f =1 MHz
4
Collector Base
Capacitance
IE = 0
V CB = 10 V
f = 1MHz
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I C = 10 A
VCC = 30 V
I B1 = -IB2 = 1A
C CBO
tr
ts
tf
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
35
20
4
100
MHz
500
pF
0.7
1
0.8
µs
µs
µs
2N5886
TO-3 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
A
P
C
O
N
B
V
E
G
U
D
R
P003F
3/4
2N5886
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4