2N5886 ® HIGH CURRENT SILICON NPN POWER TRANSISTOR ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 25 A Collector Peak Current 50 A IC I CM IB Base Current 7.5 A P tot Total Dissipation at T c ≤ 25 o C 200 W T stg Storage Temperature Tj Max. Operating Junction Temperature January 2000 -65 to 200 o C 200 o C 1/4 2N5886 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.875 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 10 mA mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 80 V V CE = 80 V I CBO Collector Cut-off Current (I E = 0) V CB = 80 V 1 mA I CEO Collector Cut-off Current (I B = 0) V CE = 40 V 2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) T c = 150 o C I C = 200 mA 80 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 15 A I C = 25 A I B = 1.5 A I B = 6.25 A 1 4 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 25 A I B = 6.25 A 2.5 V V BE ∗ Base-Emitter Voltage I C = 10 A V CE = 4 V 1.5 V h FE ∗ DC Current Gain IC = 3 A I C = 10 A I C = 25 A V CE = 4 V V CE = 4 V V CE = 4 V hfe Small Signal Current Gain IC = 3 A V CE = 4 V f = 1KHz 20 fT Transition frequency IC = 1 A V CE = 10 V f =1 MHz 4 Collector Base Capacitance IE = 0 V CB = 10 V f = 1MHz RESISTIVE LOAD Rise Time Storage Time Fall Time I C = 10 A VCC = 30 V I B1 = -IB2 = 1A C CBO tr ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 35 20 4 100 MHz 500 pF 0.7 1 0.8 µs µs µs 2N5886 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 2N5886 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4