2N720A ® EPITAXIAL PLANAR NPN ■ HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) Value Unit 120 V 80 V 7 V Collector Current 500 mA P tot Total Dissipation at T amb ≤ 25 o C at T C ≤ 25 o C 0.5 1.8 W W T stg Storage Temperature IC Tj Max. Operating Junction Temperature December 2002 -55 to 175 o C 175 o C 1/4 2N720A THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 83.3 300 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit 10 nA Collector Cut-off Current (I E = 0) V CB = 90 V Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 120 V I C = 30 mA 80 V Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA 7 V Emitter Cut-off Current (I E = 0) V EB = 5 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 50 mA I C = 150 mA V BE(sat) ∗ Base-Emitter Saturation Voltage DC Current Gain V (BR)CBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO 10 nA I B = 5 mA I B = 15 mA 1.2 5 V V I C = 50 mA I C = 150 mA I B = 5 mA I B = 15 mA 0.9 1.3 V V I C = 100 µA I C = 10 mA I C = 150 mA V CE = 10 V V CE = 10 V V CE = 10 V 20 35 40 Small Signal Current Gain I C = 50 mA f = 20 MHz V CE = 10 V 2.5 C CBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 15 pF C EBO Emitter-Base Capacitance IC = 0 V EB = 0.5 V f = 1 MHz 85 pF I EBO h FE ∗ hfe ∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/4 120 2N720A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D G A I E F H B L C 0016043 3/4 2N720A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4