BUL742CFP High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully insulated power package U.L. compliant 3 1 Applications 2 TO-220FP ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Table 1. Device summary Order code Marking Package Packaging BUL742CFP BUL742CFP TO-220FP Tube August 2007 Rev 1 1/11 www.st.com 11 Contents BUL742CFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 BUL742CFP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1050 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms) V(BR)EBO V Collector current 4 A Collector peak current (tP < 5ms) 8 A Base current 2 A IBM Base peak current (tP < 5ms) 4 A Ptot Total dissipation at Tc = 25°C 30 W VISO Insulation withstand voltage (RMS) from all three leads to external heatsink 1500 V Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 4.17 °C/W IC ICM IB TJ Table 3. Symbol Max. operating junction temperature Thermal data Parameter Rthj-case Thermal resistance junction - case 3/11 Electrical characteristics 2 BUL742CFP Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE =1050 V 0.2 10 µA ICEO Collector cut-off current (IB = 0) VCE =400 V 10 250 µA V(BR)EBO Emitter base breakdown voltage (IC = 0) IE = 1 mA 15 19 24 V IC =10 mA 400 450 Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) IC = 1 A 0.5 1.5 V V IC = 3.5 A IB = 1 A 1.1 1.5 V IC = 0.1 A IC = 0.8 A _ VCE = 5 V _ _ VCE = 3 V 75 35 100 50 2.4 350 3.5 500 IC = 3.5 A VBE(sat) (1) Base-emitter saturation voltage DC current gain ts tf Ear Repetitive avalanche energy IB = 0.2 A 0.15 0.6 Collector-emitter saturation voltage Resistive load Storage time Fall time _ V IB = 1 A VCE(sat) (1) hFE (1) _ _ IC = 2 A 48 25 VCC = 125 V IB1 = -IB2 = 400 mA tp = 300 µs L = 2 mH VBE(off) = -5 V 1. Pulsed duration = 300 ms, duty cycle £1.5% 4/11 Min. VBE(off) = -5 V µs ns C = 1.8 nF 6 mJ BUL742CFP 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. Output characteristics Figure 5. DC current gain Figure 6. DC current gain Figure 7. Collector - emitter saturation voltage 5/11 Electrical characteristics Figure 8. 6/11 Base-emitter saturation voltage BUL742CFP Figure 9. Resistive load switching on times (hFE = 5) Figure 10. Resistive load switching off times (hFE = 5) Figure 11. Resistive load switching on times (hFE = 10) Figure 12. Resistive load switching off times (hFE = 10) Figure 13. Reverse biased SOA BUL742CFP 3 Test circuit Test circuit Figure 14. Energy rating test circuit Figure 15. Resistive load switching test circuit 7/11 Package mechanical data 4 BUL742CFP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 BUL742CFP Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/11 Revision history 5 BUL742CFP Revision history Table 5. 10/11 Document revision history Date Revision 10-Aug-2007 1 Changes First release. BUL742CFP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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