PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package PowerSO-10RF (formed lead) Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55035’s superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-10RF (straight lead) Pin connection Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes May 2006 Part number Package Packing PD55035-E PowerSO-10RF (formed lead) Tube PD55035S-E PowerSO-10RF (straight lead) Tube PD55035TR-E PowerSO-10RF (formed lead) Tape and reel PD55035STR-E PowerSO-10RF (straight lead) Tape and reel Rev 1 1/22 www.st.com 22 Contents PD55035-E, PD55035S-E Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Typical performance 175MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7.1 PD55035S (VDS = 12.5V IDS = 500mA) . . . . . . . . . . . . . . . . . . . . . . . . . 12 7.2 PD55035S (VDS = 12.5V IDS = 1A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7.3 PD55035S (VDS = 12.5V IDS = 2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.4 PD55035S (VDS = 13.8V IDS = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 PD55035-E, PD55035S-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25°C) Symbol Value Unit V(BR)DSS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V Drain current 7 A Power dissipation (@ TC = 70°C) 95 W Max. operating junction temperature 165 °C -65 to +150 °C Value Unit 1.0 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance 3/22 Electrical Characteristics 2 PD55035-E, PD55035S-E Electrical Characteristics TCASE = +25 oC 2.1 Static Table 3. Static Symbol 2.2 Test conditions Min. Max. Unit IDSS VGS = 0V VDS = 28V 1 µA IGSS VGS = 20V VDS = 0V 1 µA VGS(Q) VDS = 28V ID = 100mA 5.0 V VDS(ON) VGS = 10V ID = 3A 0.95 V GFS VDS = 10V ID = 3A CISS VGS = 0V VDS = 12.5V f = 1MHz 92 pF COSS VGS = 0V VDS = 12.5V f = 1MHz 73 pF CRSS VGS = 0V VDS = 12.5V f = 1MHz 6.1 pF 2.0 0.8 2.5 mho Dynamic Table 4. Symbol POUT Dynamic Test conditions VDD = 12.5V, IDQ = 200mA Min. f = 500MHz GP VDD = 12.5V, IDQ = 200mA, POUT = 35W, f = 500MHz nD VDD = 12.5V, IDQ = 200mA, POUT = 35W, f = 500MHz Load VDD = 15.5V, IDQ = 200mA, POUT = 35W, f = 500MHz mismatch All phase angles 4/22 Typ. Typ. 35 13 20:1 Max. Unit W 16.9 dB 62 % VSWR PD55035-E, PD55035S-E 3 Impedance Impedance Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) ZIN (Ω) ZDL(Ω) 175 3.34 - j 5.84 1.67 + j 1.45 480 0.53 - j 1.08 0.86 + j 0.25 500 0.45 - j 1.21 1.05 + j 0.03 520 0.42 - j 1.20 1.04 + j 0.15 5/22 Typical performance PD55035-E, PD55035S-E 4 Typical performance Figure 2. Capacitance vs supply voltage Figure 3. 1000 Drain current vs gate source voltage 8 Vds = 10 V 7 6 Ciss 100 5 Id (A) C (pF) Coss 4 3 10 2 Crss f = 1 MHz 1 0 1 0 4 8 12 16 20 24 1 28 2 3 Figure 4. 4 5 6 Vgs (V) Vdd (V) Gate-source voltage vs case temperature Figure 5. 1.02 Output power vs input power 45 ID = 6 A 40 35 ID = 5 A 30 ID = 4 A 25 1 Pout (W) Vgs (normalized) 1.01 52 0 MHz 20 4 80 , 5 00 MHz 0.99 ID = 3 A 15 10 0.98 Vdd =1 2.5 V Idq = 20 0 mA 5 ID = 2 A 0.97 0 -25 0 25 50 Tc (°C ) 6/22 75 100 0 0.25 0 .5 0 .7 5 Pin (W ) 1 1 .25 1.5 PD55035-E, PD55035S-E Figure 6. Typical performance Power gain vs output power Figure 7. 24 Efficiency vs output power 70 480 MHz 22 520 MHz 500 MHz 60 20 18 50 480, 500 MHz Nd (%) Gp (dB) 520 MHz 16 40 30 14 12 20 Vdd = 12.5 V Idq = 200 m A Vdd = 12.5 V Idq = 200 m A 10 0 10 20 30 40 10 50 0 10 20 Pout (W ) Figure 8. 30 40 50 Pout (W ) Input return loss vs output power Figure 9. 0 Output power vs bias current 38 Vdd =12.5 V Idq = 200 m A 500 MHz -5 37 520 MHz -10 480 MHz Pout (W) RL (dB) 36 -15 35 520 MHz -20 500 MHz -25 34 480 MHz Vdd = 12.5 V Pin = 0.72 W -30 0 10 20 30 Pout (W ) 40 50 33 0 200 400 600 800 1000 Idq (m A) 7/22 Typical performance PD55035-E, PD55035S-E Figure 10. Efficiency vs bias current Figure 11. Output power vs supply voltage 60 80 70 50 500 MHz 60 480, 520 MHz 520 MHz 480 MHz 40 50 Pout (W) Nd (%) 500 MHz 40 30 20 30 Vdd = 12.5 V Pin = 0.72 W 20 Idq = 200 m A Pin = 0.72 W 10 0 10 0 200 400 600 800 6 1000 8 10 12 14 16 18 Vdd (V) Idq (m A) Figure 12. Efficiency vs supply voltage Figure 13. Output power vs gate voltage 80 45 520 MHz 480 MHz 60 480 MHz 35 500 MHz 30 Pout (W) 50 Nd (%) 520 500 40 70 40 25 20 30 15 20 10 Idq = 200 m A Pin = 0.72 W 10 0 0 6 8 10 12 Vdd (V) 8/22 Vdd = 12.5 V Pin = 0.72 W 5 14 16 18 0 0.5 1 1.5 2 Vgs (V) 2.5 3 3.5 4 PD55035-E, PD55035S-E 5 Test circuit Test circuit Figure 14. 500MHz test circuit schematic (engineering) VGG + B1 + C10 C9 R3 C8 VDD B2 R2 C18 C19 C17 C16 L1 C7 R1 RF INPUT Z1 Z3 Z4 DUT Z5 Z6 Z7 C1 C2 Table 6. Z2 C3 C4 C5 C6 Z8 C13 C12 Z9 C15 N2 RF OUTPUT C14 C11 Test circuit component part list Component B1,B2 Description FERRITE BEAD C1,C13 300 pF, 100 mil CHIP CAPACITOR C2,C3,C4,C12,C13,C14 1 to 20 pF TRIMMER CAPACITOR C6 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7, C19 120 pF 100 mil CHIP CAPACITOR C10, C16 10 µF, 50 V ELECTROLYTIC CAPACITOR C9, C17 0.1 mF, 100 mil CHIP CAP C8, C18 1.000 pF 100 mil CHIP CAP C5, C11 33 pF, 100 mil CHIP CAP L1 56 nH, 7 TURN, COILCRAFT N1, N2 TYPE N FLANGE MOUNT R1 15 Ω, 1 W CHIP RESISTOR R2 1 KΩ, 1 W CHIP RESISTOR R3 33 KΩ, 1 W CHIP RESISTOR Z1 0.471” X 0.080” MICROSTRIP Z2 1.082” X 0.080” MICROSTRIP Z3 0.372” X 0.080” MICROSTRIP Z4,Z5 0.260” X 0.223” MICROSTRIP Z6 0.050” X 0.080” MICROSTRIP Z7 0.551” X 0.080” MICROSTRIP Z8 0.825” X 0.080” MICROSTRIP Z9 0.489” X 0.080” MICROSTRIP BOARD ROGER, ULTRA LAM 2000 THK 0.030”, ε r = 2.55 2oz. ED cu 2 SIDES. 9/22 Typical performance 175MHz 6 PD55035-E, PD55035S-E Typical performance 175MHz Figure 15. Output power vs input power Figure 16. Power gain vs output power 45 25 40 20 35 30 Gp (dB) Pout (W) 15 25 20 10 15 10 5 Vdd = 12.5 V Idq = 200 m A f = 175 MHz 5 Vdd = 12.5 V Idq = 200 m A f = 175 MHz 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 10 20 Pin (W ) 30 40 50 Pout (W ) Figure 17. Efficiency vs output power Figure 18. Input return loss vs output power 0 80 Vdd = 12.5 V Idq = 200 m A f = 175 MHz 70 -5 60 -10 RL (dB) Nd (%) 50 40 -15 30 20 -20 Vdd = 12.5 V Idq = 200 m A f = 175 MHz 10 -25 0 0 10 20 30 Pout (W ) 10/22 40 50 0 10 20 30 Pout (W ) 40 50 PD55035-E, PD55035S-E Typical performance 175MHz Figure 19. 175MHz test circuit schematic (engineering) +VDD +VGG RF Output RF Input Table 7. 175MHz test circuit component part list Component Description C1,C6 10 µF ELECTROLYTIC CAPACITOR C2,C5 0.1 µF CHIP CAPACITOR C3, C4 0.01 µF CHIP CAPACITOR C7, C8 1200 pF CHIP CAPACITOR C9, C16 1000 pF CHIP CAPACITOR C10 ARCO 406 TRIMMER CAPACITOR C11 62 pF CHIP CAPACITOR C12 15 pF CHIP CAPACITOR C13 20 pF CHIP CAPACITOR C14 75 pF CHIP CAPACITOR C15 JOHANSON 1-20 pF TRIMMER CAPACITOR R1 33 kΩ CHIP RESISTOR R2 18 Ω CHIP RESISTOR R3 27 Ω CHIP RESISTOR R4 47 Ω CHIP RESISTOR L1 5 TURN, 16 AWG MAGNETWIRE, ID = 0.25”, INDUCTOR FB1, FB2 BOARD FERRITE BEAD ROGER, ULTRA LAM 2000 THK 0.030”, ε r = 2.55 2oz. ED Cu 2 SIDES. 11/22 Common source s-parameter PD55035-E, PD55035S-E 7 Common source s-parameter 7.1 PD55035S (VDS = 12.5V IDS = 500mA) Table 8. 12/22 S-parameter FREQ IS 11I (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.823 0.855 0.875 0.891 0.902 0.918 0.924 0.934 0.940 0.949 0.956 0.958 0.963 0.968 0.971 0.970 0.973 0.975 0.974 0.976 0.977 0.976 0.978 0.979 0.980 0.979 0.977 0.975 0.974 0.972 S 11∠Φ -162 -169 -172 -173 -174 -175 -176 -176 -177 -177 -178 -179 -180 180 179 179 178 178 177 177 176 176 176 175 175 174 174 174 173 173 IS 21I 14.28 6.87 4.50 3.18 2.42 1.90 1.52 1.25 1.03 0.87 0.74 0.65 0.56 0.49 0.44 0.39 0.35 0.32 0.29 0.26 0.24 0.22 0.20 0.19 0.18 0.16 0.15 0.14 0.13 0.12 S 21∠Φ 86 75 68 60 53 47 42 37 33 29 26 23 20 18 15 13 12 10 8 7 5 4 2 1 -1 -2 -3 -3 -3 -4 IS 12I S 12∠Φ IS 22I S 22∠Φ 0.015 0.015 0.014 0.013 0.012 0.011 0.010 0.008 0.007 0.007 0.005 0.004 0.004 0.003 0.003 0.002 0.002 0.002 0.002 0.003 0.002 0.003 0.003 0.004 0.004 0.005 0.006 0.006 0.006 0.007 -3 -11 -17 -24 -29 -32 -36 -37 -38 -40 -40 -36 -36 -27 -21 -5 11 24 27 47 61 69 72 78 87 86 88 91 97 117 0.782 0.798 0.813 0.835 0.856 0.876 0.890 0.903 0.918 0.928 0.935 0.946 0.952 0.955 0.959 0.962 0.967 0.967 0.971 0.972 0.976 0.976 0.974 0.975 0.977 0.976 0.975 0.977 0.975 0.969 -168 -171 -172 -172 -172 -173 -173 -174 -175 -175 -176 -177 -178 -178 -179 -179 -180 179 179 178 178 177 177 176 176 176 175 174 174 174 PD55035-E, PD55035S-E 7.2 Common source s-parameter PD55035S (VDS = 12.5V IDS = 1A) Table 9. S-parameter FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.845 0.877 0.894 0.905 0.909 0.920 0.924 0.933 0.937 0.946 0.951 0.953 0.959 0.963 0.965 0.964 0.967 0.970 0.971 0.972 0.972 0.973 0.975 0.976 0.975 0.975 0.974 0.973 0.972 0.970 -165 -171 -174 -175 -176 -176 -177 -177 -178 -178 -179 -180 180 179 179 178 178 177 177 176 176 176 175 175 174 174 174 174 173 173 14.89 7.23 4.81 3.46 2.69 2.15 1.75 1.46 1.22 1.05 0.90 0.79 0.69 0.61 0.55 0.49 0.44 0.40 0.37 0.34 0.31 0.29 0.26 0.25 0.22 0.21 0.19 0.18 0.17 0.16 87 78 72 65 59 54 48 44 39 36 32 29 26 24 21 19 17 15 13 11 9 8 6 4 3 2 1 0 -1 -1 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.005 0.005 0.005 0.006 0.006 0.008 0 -8 -12 -17 -20 -23 -27 -28 -28 -28 -26 -23 -19 -13 -4 6 14 31 39 55 53 64 70 75 85 81 85 89 95 110 0.818 0.829 0.836 0.849 0.863 0.877 0.887 0.898 0.910 0.919 0.925 0.936 0.942 0.946 0.951 0.954 0.960 0.960 0.965 0.964 0.970 0.969 0.966 0.971 0.972 0.970 0.970 0.971 0.971 0.965 -171 -174 -175 -175 -175 -175 -175 -176 -176 -177 -177 -178 -178 -179 -179 -180 180 179 179 178 178 177 179 176 176 175 175 174 174 174 13/22 Common source s-parameter 7.3 PD55035S (VDS = 12.5V IDS = 2A) Table 10. 14/22 PD55035-E, PD55035S-E S-parameter FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.863 0.892 0.909 0.916 0.920 0.927 0.929 0.935 0.938 0.944 0.950 0.952 0.956 0.960 0.964 0.964 0.965 0.968 0.969 0.971 0.971 0.970 0.973 0.975 0.973 0.971 0.973 0.971 0.969 0.968 -165 -171 -174 -176 -177 -177 -178 -178 -179 -179 -180 180 179 179 179 178 177 177 177 176 176 176 175 175 174 174 174 173 173 173 15.03 7.33 4.91 3.56 2.81 2.26 1.86 1.57 1.33 1.14 0.99 0.87 0.77 0.69 0.61 0.55 0.50 0.46 0.42 0.39 0.36 0.33 0.30 0.28 0.26 0.24 0.23 0.21 0.20 0.18 88 80 74 68 63 58 52 48 44 40 37 33 30 28 25 23 21 18 17 14 12 11 9 7 5 4 3 2 1 1 0.010 0.009 0.009 0.009 0.008 0.008 0.007 0.006 0.006 0.005 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.006 0.006 0.008 0 -5 -9 -11 -12 -15 -18 -20 -20 -16 -15 -14 -9 4 11 20 32 38 46 47 57 60 69 72 78 80 83 83 91 112 0.841 0.848 0.853 0.860 0.872 0.880 0.889 0.896 0.906 0.914 0.918 0.929 0.935 0.940 0.946 0.949 0.955 0.954 0.959 0.959 0.967 0.964 0.964 0.966 0.971 0.968 0.970 0.971 0.970 0.969 -173 -176 -176 -176 -177 -177 -177 -177 -178 -177 -178 -179 -179 -179 180 180 179 179 178 177 177 177 176 176 175 175 174 174 174 173 PD55035-E, PD55035S-E 7.4 Common source s-parameter PD55035S (VDS = 13.8V IDS = 3A) Table 11. S-parameter FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.867 0.896 0.913 0.921 0.921 0.929 0.930 0.936 0.938 0.947 0.950 0.951 0.956 0.960 0.963 0.962 0.964 0.967 0.969 0.969 0.969 0.969 0.971 0.973 0.971 0.971 0.973 0.970 0.968 0.968 -165 -171 -175 -176 -177 -178 -178 -178 -179 -179 180 180 179 179 178 178 177 177 177 176 176 175 175 175 174 174 174 173 173 173 14.95 7.31 4.92 3.57 2.82 2.28 1.90 1.59 1.36 1.17 1.02 0.90 0.79 0.71 0.64 0.58 0.52 0.48 0.44 0.40 0.37 0.34 0.32 0.30 0.27 0.26 0.24 0.22 0.21 0.19 88 80 75 69 64 59 54 50 45 42 38 35 32 29 26 24 22 20 18 15 14 12 10 8 6 5 4 2 3 1 0.009 0.009 0.008 0.008 0.008 0.007 0.007 0.006 0.005 0.005 0.004 0.004 0.004 0.003 0.003 0.003 0.004 0.003 0.003 0.004 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.007 0.006 0.008 2 -4 -7 -9 -13 -12 -14 -16 -14 -11 -10 -6 -3 4 17 21 32 41 36 53 58 64 69 71 77 78 80 87 91 111 0.848 0.856 0.861 0.866 0.874 0.882 0.888 0.896 0.904 0.915 0.917 0.927 0.934 0.935 0.943 0.948 0.951 0.949 0.958 0.956 0.963 0.963 0.961 0.965 0.967 0.970 0.965 0.973 0.967 0.965 -174 -177 -177 -177 -177 -177 -178 -177 -178 -178 -178 -179 -179 -179 180 179 179 178 178 178 177 177 176 176 175 174 175 174 174 173 15/22 Package mechanical data 8 PD55035-E, PD55035S-E Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 16/22 PD55035-E, PD55035S-E Table 12. Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data Dim. mm. Min. Typ. A1 0 0.05 A2 3.4 3.5 A3 1.2 1.3 A4 0.15 0.2 b 5.4 c D Min. Typ. Max. 0.1 0. 0.0019 0.0038 3.6 0.134 0.137 0.142 1.4 0.046 0.05 0.054 0.25 0.005 0.007 0.009 5.53 5.65 0.212 0.217 0.221 0.23 0.27 0.32 0.008 0.01 0.012 9.4 9.5 9.6 0.370 0.374 0.377 a Max. 0.2 0.007 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 13.85 14.1 14.35 0.544 0.555 0.565 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 L 0.8 1 R1 T 1.1 0.030 0.039 0.25 R2 Note: Inch 0.01 0.8 2 deg 5 deg 0.042 0.031 8 deg 2 deg 5 deg T1 6 deg 6 deg T2 10 deg 10 deg 8 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 20. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 17/22 Package mechanical data Table 13. PD55035-E, PD55035S-E PowerSO-10RF Straight Lead Mechanical data Dim. mm. Min. Typ. Max. Min. Typ. Max. A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 R1 Note: Inch 0.25 0.01 R2 0.8 0.031 T1 6 deg 6 deg T2 10 deg 10 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 21. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 18/22 PD55035-E, PD55035S-E Package mechanical data Figure 22. Tube information 19/22 Package mechanical data Figure 23. Reel information 20/22 PD55035-E, PD55035S-E PD55035-E, PD55035S-E 9 Revision history Revision history Table 14. Revision history Date Revision 11-May-2006 1 Changes Initial release. 21/22 PD55035-E, PD55035S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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