PD57030-E PD57030S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 14dB gain @ 945MHz / 28V ■ New RF plastic package PowerSO-10RF (formed lead) Description The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. PD57030 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57030’s superior linearity performance makes it an ideal solution for base station applications. PowerSO-10RF (straight lead) Pin connection Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes Part number Package Packing PD57030-E PowerSO-10RF (formed lead) Tube PD57030S-E PowerSO-10RF (straight lead) Tube PD57030TR-E PowerSO-10RF (formed lead) Tape and reel PD57030STR-E PowerSO-10RF (straight lead) Tape and reel August 2006 Rev 1 1/18 www.st.com 18 Contents PD57030-E, PD57030S-E Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 PD57030-E, PD57030S-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25°C) Symbol Value Unit V(BR)DSS Drain-source voltage 65 V VGS Gate-source voltage ± 20 V 4 A Power dissipation (@ TC = 70°C) 52.8 W Max. operating junction temperature 165 °C -65 to +150 °C Value Unit 1.8 °C/W ID PDISS TJ TSTG 1.2 Parameter Drain current Storage temperature Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance 3/18 Electrical characteristics 2 PD57030-E, PD57030S-E Electrical characteristics TCASE = +25 oC 2.1 Static Table 3. Static Symbol 2.2 Test conditions Typ Max Unit V(BR)DSS VGS = 0 V IDS = 10mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 50 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 1.3 V gFS VDS = 10 V ID = 3A 1.8 mho CISS VGS = 0 V VDS = 28 V f = 1 MHz 57 pF COSS VGS = 0 V VDS = 28 V f = 1 MHz 30 pF CRSS VGS = 0 V VDS = 28V f = 1 MHz 2.3 pF 65 V 2.0 Dynamic Table 4. Dynamic Symbol 4/18 Min Test conditions Min Typ Max Unit POUT VDS = 28V IDQ = 50 mA f = 945 MHz 30 GP VDS = 28V IDQ = 50 mA POUT = 30 W f = 945 MHz 13 14 dB ηD VDS = 28V IDQ = 50 mA POUT = 30 W f = 945 MHz 45 53 % IDQ = 50 mA Load VDS = 28V mismatch ALL PHASE ANGLES POUT = 30 W f = 945 MHz 10:1 W VSWR PD57030-E, PD57030S-E 3 Impedance Impedance Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) ZIN (Ω) ZDL(Ω) 925 0.929 - j 0.315 2.60 + j 1.45 945 0.809 - j 0.085 2.46 + j 0.492 960 0.763 - j 0.428 2.35 + j 0.591 5/18 Typical performance PD57030-E, PD57030S-E 4 Typical performance Figure 2. Capacitance vs supply voltage Figure 3. C (pF) Id (A) 100 5 Drain current vs gate source voltage Ciss 4 Coss 3 10 2 Crss 1 1 0 0 5 10 15 20 25 30 Vdd (V) Figure 4. Vgs (Normalized) 1.05 Id = 3A Id = 2.5A Id = 2A Id = 1.5A Id = 1A Id = 500mA 0.95 Id = 250mA Vds = 10V 0.9 -50 0 50 Tc (ºC) 6/18 3 4 5 Vgs (V) Gate-source voltage vs case temperature 1 2 100 150 6 7 PD57030-E, PD57030S-E Typical performance PD57030S Figure 5. Output power vs input power Figure 6. Pout (W) Input return loss vs output power IRL (dB) 50 5 945 MHz 0 40 925 MHz -5 960 MHz 30 -10 960 MHz -15 20 945 MHz -20 925 MHz 10 -25 Vdd = 28V Idq = 50mA Vdd = 28V Idq = 50mA 0 -30 0 0.5 1 1.5 2 0 10 20 Pin (W) Figure 7. 30 40 50 Pout (W) Power gain vs output power Figure 8. Pg (dB) Eff (%) 18 70 Efficiency vs output power 925 MHz 16 60 945 MHz 960 MHz 14 960 MHz 50 12 925 MHz 945 MHz 10 40 8 30 6 Vdd = 28V Idq = 50mA Vdd = 28V Idq = 50mA 4 20 0 10 20 30 Pout (W) 40 50 0 10 20 30 40 50 Pout (W) 7/18 Typical performance Figure 9. PD57030-E, PD57030S-E Output power vs bias current Figure 10. Efficiency vs bias current Pout (W) Eff (%) 35 60 925 MHz 945 MHz 925 MHz 945 MHz 30 50 960 MHz 25 40 20 30 15 960 MHz 20 Pin = 29.1dBm Vdd = 28V Pin = 29.1dBm Vdd = 28V 10 10 0 100 200 300 400 500 0 100 200 Idq (mA) 300 400 500 Idq (mA) Figure 11. Output power vs drain voltage Figure 12. Efficiency vs drain voltage Pout (W) Eff (%) 35 60 925 MHz 945 MHz 945 MHz 30 50 960 MHz 925 MHz 25 960 MHz 40 20 30 15 20 10 Pin = 29.1dBm Idq = 50mA Pin = 29.1dBm Idq = 50mA 5 10 10 15 20 Vdd (V) 8/18 25 30 10 15 20 Vdd (V) 25 30 PD57030-E, PD57030S-E Typical performance Figure 13. Output power vs gate-source voltage Pout (W) 40 925 MHz 945 MHz 30 960 MHz 20 10 Pin = 29.1dBm Vdd = 28V 0 0 1 2 3 4 5 Vgs (V) 9/18 Test circuit 5 PD57030-E, PD57030S-E Test circuit Figure 14. Test circuit schematic VGG + + RF IN Table 6. RF OUT Test circuit component part list Component 10/18 VD D + + Description C1, C8, C9, C13 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C2, C7 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR C3, C4, C5, C6 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C10 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C11, C15 0.1µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR C12 10µF / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C14 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C16 220µF / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR R1 18KΩ, 1W SURFACE MOUNT CHIP RESISTOR R2 4.7MΩ, 1W SURFACE MOUNT CHIP RESISTOR R3 120Ω, 2W SURFACE MOUNT CHIP RESISTOR FB1, FB2 SHIELD BEAD SURFACE MOUNT EMI L1, L2 INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE PD57030-E, PD57030S-E Test circuit 4 inches Figure 15. Test circuit photomaster PD57030S 6.4 inches Figure 16. Test circuit 11/18 Package mechanical data 6 PD57030-E, PD57030S-E Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 12/18 PD57030-E, PD57030S-E Table 7. Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data Dim. mm. Min. Typ. A1 0 0.05 A2 3.4 3.5 A3 1.2 1.3 A4 0.15 0.2 b 5.4 c D Min. Typ. Max. 0.1 0. 0.0019 0.0038 3.6 0.134 0.137 0.142 1.4 0.046 0.05 0.054 0.25 0.005 0.007 0.009 5.53 5.65 0.212 0.217 0.221 0.23 0.27 0.32 0.008 0.01 0.012 9.4 9.5 9.6 0.370 0.374 0.377 a Max. 0.2 0.007 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 13.85 14.1 14.35 0.544 0.555 0.565 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 L 0.8 1 R1 T 1.1 0.030 0.039 0.25 R2 Note: Inch 0.01 0.8 2 deg 5 deg 0.042 0.031 8 deg 2 deg 5 deg T1 6 deg 6 deg T2 10 deg 10 deg 8 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 17. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 13/18 Package mechanical data Table 8. PD57030-E, PD57030S-E PowerSO-10RF Straight Lead Mechanical data Dim. mm. Min. Typ. Max. Min. Typ. Max. A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 R1 Note: Inch 0.25 0.01 R2 0.8 0.031 T1 6 deg 6 deg T2 10 deg 10 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 18. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 14/18 PD57030-E, PD57030S-E Package mechanical data Figure 19. Tube information 15/18 Package mechanical data Figure 20. Reel information 16/18 PD57030-E, PD57030S-E PD57030-E, PD57030S-E 7 Revision history Revision history Table 9. Revision history Date Revision 07-Aug-2006 1 Changes Initial release. 17/18 PD57030-E, PD57030S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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