PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package PowerSO-10RF (formed lead) Description The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57006’s superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-10RF (straight lead) Pin connection The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Source Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes Part number Package Packing PD57006-E PowerSO-10RF (formed lead) Tube PD57006S-E PowerSO-10RF (straight lead) Tube PD57006TR-E PowerSO-10RF (formed lead) Tape and reel PD57006STR-E PowerSO-10RF (straight lead) Tape and reel August 2006 Rev 1 1/22 www.st.com 22 Contents PD57006-E, PD57006S-E Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.1 PD57006 (VDS = 13.5V IDS = 0.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.2 PD57006 (VDS = 28V IDS = 0.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 PD57006-E, PD57006S-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25°C) Symbol Value Unit V(BR)DSS Drain-source voltage 65 V VGS Gate-source voltage ± 20 V Drain current 1 A Power dissipation (@ TC = 70°C) 20 W Max. operating junction temperature 165 °C -65 to +150 °C Value Unit 5 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance 3/22 Electrical characteristics 2 PD57006-E, PD57006S-E Electrical characteristics TCASE = +25 oC 2.1 Static Table 3. Static Symbol 2.2 Test conditions Typ Max Unit V(BR)DSS VGS = 0 V ID = 10 mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 70 mA 5.0 V VDS(ON) VGS = 10 V ID = 0.5 A 0.9 V gFS VDS = 10 V ID = 800 mA CISS VGS = 0 V VDS = 28 V COSS VGS = 0 V CRSS VGS = 0 V 65 2.0 0.58 mho f = 1 MHz 27 pF VDS = 28 V f = 1 MHz 14 pF VDS = 28 V f = 1 MHz 0.9 pF Dynamic Table 4. Dynamic Symbol 4/22 Min Test conditions Min Typ Max Unit POUT VDD = 28 V IDQ = 70 mA f = 945 MHz 6 GP VDD = 28 V IDQ = 70 mA POUT = 6 W f = 945 MHz 14 15 dB ηD VDD = 28 V IDQ = 70 mA POUT = 6 W f = 945 MHz 45 50 % IDQ = 70 mA Load VDD = 28 V mismatch All phase angles POUT = 6 W f = 945 MHz 10:1 W VSWR PD57006-E, PD57006S-E 3 Impedance Impedance Figure 1. Current conventions Table 5. Impedance data PD57006 PD57006S Freq. (MHz) ZIN (Ω) ZDL(Ω) Freq. (MHz) ZIN (Ω) ZDL(Ω) 925 6.040 - j 0.936 6.273 + j 8.729 925 3.794 - j 1.632 3.513 + j 10.81 945 5.886 - j 2.326 6.578 + j 5.999 945 4.039 - j 2.300 3.862 + j 10.58 960 6.056 - j 3.522 7.215 + j 7.539 960 4.250 - j 3.791 4.005 + j 11.34 5/22 Typical performance PD57006-E, PD57006S-E 4 Typical performance Figure 2. Capacitance vs supply voltage Figure 3. C , C A P A C IT A N C E S (p F ) 100 Ciss 10 Coss 1 Crss f=1MHz 0.1 0 4 8 12 16 20 24 28 VDD, DRAIN VOLTAGE (V) VG S, G ATE-SO U R C E VO LTAG E(N orm alized) Figure 4. Gate-source voltage vs case temperature 1.06 1.04 Id=1.5 A 1.02 Id=1 A 1 Id=.6 A 0.98 Id=.2 A 0.96 Vds=10 V 0.94 0.92 -25 0 Id=.05 A 25 50 Tc, CASE TEMPERATURE (°C) 6/22 75 100 Drain current vs gate source voltage PD57006-E, PD57006S-E Typical performance PD57006 Figure 5. Output power vs input power Figure 6. 0 8 925 MHz 7 Rtl, RETURN LOSS (dB) Pout, OU T PU T POW ER (W ) 9 Input return loss vs output power 945 MHz 6 5 960 MHz 4 3 Vdd=28V Idq=70mA 2 -5 945 MHz -10 960 MHz -15 925 MHz -20 Vdd=28V Idq=70mA 1 0 0 0.1 0.2 0.3 -25 0.4 0 1 2 Pin, INPUT POWER (W) Figure 7. Power gain vs output power Figure 8. 18 4 5 6 7 8 9 Drain efficiency vs output power 60 Nd, D RAIN EFFIC IEN C Y (% ) 925 MHz 16 Pg, PO W ER G AIN (dB) 3 Pout, OUTPUT POWER (W) 14 945 MHz 12 960 MHz 10 8 Vdd=28V Idq=70mA 6 4 925 MHz 50 960 MHz 40 945 MHz 30 20 Vdd=28V Idq=70mA 10 0 1 2 3 4 5 6 Pout, OUTPUT POWER (W) 7 8 9 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (W) 7/22 Typical performance Figure 9. PD57006-E, PD57006S-E Output power vs drain voltage Figure 10. Drain efficiency vs bias current 60 8 N d, D R AIN EF F IC IEN C Y (% ) Pout, O UTPUT POWER (W) 10 925 MHz 6 960 MHz 945 MHz 4 Vdd=28V Pin= 23.6 dBm 2 0 945 MHz 50 925 MHz 960 MHz 40 30 Vdd=28V Pin= 23.6 dBm 20 10 0 100 200 300 400 0 100 IDQ, BIAS CURRENT (mA) 200 300 400 IDQ, BIAS CURRENT (mA) Figure 11. Output power vs supply voltage Figure 12. Drain efficiency vs supply voltage 8 60 7 N d, D R AIN EFF IC IEN C Y (% ) Pout, O U T PU T PO W ER (W ) 945 MHz 925 MHz 6 5 960 MHz 4 3 Idq=70 mA Pin= 23.6 dBm 2 1 10 945 MHz 960 MHz 40 30 Idq= 70 mA Pin= 23.6 dBm 20 10 12 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (V) 8/22 925 MHz 50 26 28 30 10 12 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (V) 26 28 30 PD57006-E, PD57006S-E Typical performance Figure 13. Output power vs gate-source voltage P out, O U T P U T P O W E R (W ) 9 8 925 MHz 7 6 960 MHz 5 4 945 MHz 3 2 Vdd=28V Pin= 23.6 dBm 1 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) PD57006S Figure 14. Output power vs input power Figure 15. Input return loss vs output power 9 0 8 R tl, R E T U R N L O S S (d B ) P o u t, O U T P U T P O W E R (W ) 925 MHz 7 960 MHz 6 -10 945 MHz 5 Vdd=28V Idq=70mA -5 4 945 MHz 925 MHz -15 3 Vdd=28V Idq=70mA 2 960 MHz -20 1 -25 0 0 0.1 0.2 Pin, INPUT POWER (W) 0.3 0.4 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (W) 9/22 Typical performance PD57006-E, PD57006S-E Figure 16. Power gain vs output power Figure 17. Drain efficiency vs output power 18 60 925 MHz 945 MHz N d , D R A IN E F F IC IE N C Y (% ) P g , P O W E R G A IN (d B ) 16 945 MHz 14 960 MHz 12 10 8 Vdd=28V Idq=70mA 6 4 50 960 MHz 925 MHz 40 30 20 Vdd=28V Idq=70mA 10 0 1 2 3 4 5 6 7 8 9 0 1 2 Pout, OUTPUT POWER (W) Figure 18. Output power vs bias current 4 5 6 7 8 9 Figure 19. Drain efficiency vs bias current 10 60 945 MHz 8 N d , D R A IN E F F IC IE N C Y (% ) P o u t, O U T P U T P O W E R (W ) 3 Pout, OUTPUT POWER (W) 925 MHz 50 6 960 MHz 945 MHz 4 960 MHz 30 2 Vdd=28V Pin= 22.7 dBm 20 Vdd=28V Pin= 22.7 dBm 0 10 0 100 200 IDQ, BIAS CURRENT (mA) 10/22 925 MHz 40 300 400 0 100 200 IDQ, BIAS CURRENT (mA) 300 400 PD57006-E, PD57006S-E Typical performance Figure 20. Output power vs supply voltage Figure 21. Drain efficiency vs supply voltage 8 60 960 MHz P o u t, O U T P U T P O W E R (W ) 7 6 N d , D R A IN E F F IC IE N C Y (% ) 925 MHz 50 945 MHz 925 MHz 945 MHz 40 5 960 MHz 4 30 3 Idq=70 mA Pin= 22.7 dBm 2 1 10 12 14 16 18 20 22 24 26 28 Idq=70 mA Pin= 22.7 dBm 20 30 VDD, SUPPLY VOLTAGE (V) 10 10 12 14 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (V) Figure 22. Output power vs gate-source voltage 9 P o u t, O U T P U T P O W E R (W ) 8 925 MHz 7 945 MHz 6 960 MHz 5 4 3 2 Vdd=28V Pin= 22.7 dBm 1 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) 11/22 Test circuit 5 PD57006-E, PD57006S-E Test circuit Figure 23. Test circuit schematic Table 6. B1, B2 Test circuit component part list SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446) R2 18 kΩ CHIP RESISTOR 1 W R3 4.7 mΩ CHIP RESISTOR 1 W 1000 pF, 100B ATC CHIP CAPACITOR R4 12 kΩ CHIP RESISTOR 1 W C4, C12 .01 µF, VENKEL CHIP CAPACITOR Z1 0.430” X 0.084” MICROSTRIP C3, C13 220 µF, 63 V ELECTROLYTIC CAPACITOR Z2 0.1.186” X 1.120” MICROSTRIP C10 100 pF, 100B ATC CHIP CAPACITOR Z3 1.273” X 0.565” MICROSTRIP C9 6.2 pF, 100B ATC CHIP CAPACITOR Z4 0.770” X 0.171” MICROSTRIP C7, C8 08-8 pF VARIABLE CAPACITOR JOHANSON Z5 0.880” X 0.105” MICROSTRIP L1 15 nH, 3 TURN, .140” DIA. 22 AWG BELDEN 8021 BLIS PER WIRE Z6 1.200” X 0.084” MICROSTRIP C1, C2, C11, 47 pF, 100B ATC CHIP C14 CAPACITOR C5 N1, N2 R1 12/22 TYPE N FLANGE MOUNT 100 Ω CHIP RESISTOR 1 W BOARD ROGER ULTRA LAM 2000 THK 0.030” ε r = 2.55 2oz ED Cu BOTH SIDES PD57006-E, PD57006S-E Test circuit 4 inches Figure 24. Test circuit photomaster 6.4 inches Figure 25. Test circuit Table 7. Transmission line dimensions Z1 0.430” X 0.084” MICROSTRIP Z4 1.273” X 0.565” MICROSTRIP Z7 0.778” X 0.150” MICROSTRIP Z2 0.220” X 0.155” MICROSTRIP Z5 0.195” X 0.250” MICROSTRIP Z8 0.120” X 0.171” MICROSTRIP Z3 0.960” X 0.120” MICROSTRIP Z6 0.555” X 0.171” MICROSTRIP Z8 1.200” X 0.084” MICROSTRIP 13/22 Common source s-parameter PD57006-E, PD57006S-E 6 Common source s-parameter 6.1 PD57006 (VDS = 13.5V IDS = 0.2A) Table 8. 14/22 S-parameter FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.895 0.786 0.765 0.767 0.778 0.790 0.794 0.806 0.814 0.826 0.836 0.843 0.850 0.857 0.863 0.869 0.869 0.872 0.875 0.873 0.875 0.872 0.871 0.864 0.861 0.855 0.847 0.835 0.818 0.797 -79 -118 -134 -143 -151 -156 -159 -162 -165 -167 -170 -172 -174 -176 -178 -180 178 177 175 173 172 170 168 166 164 163 160 158 156 153 29.76 18.68 12.61 9.22 7.50 6.09 5.23 4.39 3.82 3.30 2.90 2.59 2.32 2.09 1.91 1.76 1.61 1.50 1.40 1.32 1.24 1.18 1.12 1.08 1.03 1.00 0.96 0.93 0.89 0.88 130 102 90 80 73 66 59 54 48 43 38 34 31 27 23 20 16 13 10 7 3 0 -4 -7 -11 -15 -19 -23 -27 -31 0.033 0.041 0.042 0.041 0.041 0.038 0.038 0.036 0.035 0.033 0.031 0.029 0.028 0.027 0.025 0.024 0.023 0.022 0.020 0.020 0.019 0.019 0.018 0.017 0.016 0.016 0.015 0.015 0.015 0.016 39 13 2 -8 -15 -22 -28 -32 -37 -41 -45 -49 -53 -56 -59 -62 -64 -68 -72 -75 -78 -81 -86 -92 -97 -102 -108 -111 -120 -128 0.814 0.699 0.621 0.629 0.629 0.650 0.685 0.700 0.724 0.749 0.771 0.785 0.803 0.814 0.829 0.839 0.847 0.859 0.868 0.873 0.885 0.886 0.889 0.890 0.895 0.896 0.895 0.897 0.896 0.899 -70 -106 -121 -132 -136 -141 -143 -147 -149 -152 -154 -1564 -158 -1598 -162 -163 -165 -166 -168 -169 -171 -172 -174 -175 -177 -178 -180 179 178 177 PD57006-E, PD57006S-E 6.2 Common source s-parameter PD57006 (VDS = 28V IDS = 0.2A) Table 9. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S-parameter IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ 0.953 0.855 0.823 0.818 0.824 0.832 0.835 0.845 0.850 0.860 0.866 0.870 0.878 0.883 0.887 0.890 0.890 0.888 0.892 0.894 0.892 0.888 0.885 0.880 0.872 0.864 0.856 0.844 0.824 0.806 -65 -104 -124 -136 -144 -150 -155 -159 -162 -165 -168 -170 -172 -174 -177 -179 179 178 176 174 172 170 169 167 165 163 161 159 156 154 31.01 21.59 15.49 11.84 9.54 7.85 6.48 5.51 4.69 4.11 3.58 3.21 2.88 2.60 2.37 2.16 1.98 1.82 1.69 1.57 1.47 1.36 1.28 1.21 1.16 1.11 1.09 1.06 1.06 1.04 138 112 96 85 75 67 59 53 4 43 38 33 29 25 21 17 13 9 6 3 0 -3 -6 -9 -11 -14 -17 -20 -23 -29 0.022 0.030 0.031 0.031 0.031 0.029 0.029 0.027 0.025 0.024 0.023 0.021 0.019 0.019 0.016 0.017 0.015 0.014 0.013 0.013 0.011 0.011 0.010 0.009 0.009 0.008 0.007 0.007 0.007 0.008 48 20 7 -5 -12 -19 -25 -31 -36 -41 -44 -48 -53 -53 -59 -60 -62 -67 -70 -72 -76 -80 -86 -89 -95 -103 -110 -118 -129 -143 0.780 0.677 0.601 0.605 0.614 0.635 0.676 0.696 0.722 0.748 0.773 0.790 0.808 0.821 0.838 0.846 0.856 0.869 0.879 0.886 0.892 0.894 0.899 0.897 0.901 0.906 0.905 0.905 0.906 0.910 -52 -85 -101 -113 -118 -126 -129 -134 -137 -141 -144 -147 -150 -152 -154 -156 -158 -160 -162 -163 -165 -166 -168 -170 -171 -173 -174 -176 -177 -178 15/22 Package mechanical data 7 PD57006-E, PD57006S-E Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 16/22 PD57006-E, PD57006S-E Table 10. Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data Dim. mm. Min. Typ. A1 0 0.05 A2 3.4 3.5 A3 1.2 1.3 A4 0.15 0.2 b 5.4 c D Min. Typ. Max. 0.1 0. 0.0019 0.0038 3.6 0.134 0.137 0.142 1.4 0.046 0.05 0.054 0.25 0.005 0.007 0.009 5.53 5.65 0.212 0.217 0.221 0.23 0.27 0.32 0.008 0.01 0.012 9.4 9.5 9.6 0.370 0.374 0.377 a Max. 0.2 0.007 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 13.85 14.1 14.35 0.544 0.555 0.565 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 L 0.8 1 R1 T 1.1 0.030 0.039 0.25 R2 Note: Inch 0.01 0.8 2 deg 5 deg 0.042 0.031 8 deg 2 deg 5 deg T1 6 deg 6 deg T2 10 deg 10 deg 8 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 26. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 17/22 Package mechanical data Table 11. PD57006-E, PD57006S-E PowerSO-10RF Straight Lead Mechanical data Dim. mm. Min. Typ. Max. Min. Typ. Max. A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 R1 Note: Inch 0.25 0.01 R2 0.8 0.031 T1 6 deg 6 deg T2 10 deg 10 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 27. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 18/22 PD57006-E, PD57006S-E Package mechanical data Figure 28. Tube information 19/22 Package mechanical data Figure 29. Reel information 20/22 PD57006-E, PD57006S-E PD57006-E, PD57006S-E 8 Revision history Revision history Table 12. Revision history Date Revision 07-Aug-2006 1 Changes Initial release. 21/22 PD57006-E, PD57006S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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