SD2931-11 RF power transistors HF/VHF/UHF N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures ■ GFS and VGS sort marked on unit M174 epoxy sealed Description The SD2931-11 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. Figure 1. 4 The SD2931-11 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. Table 1. Pin connection 3 1. Drain 2. Source 1 2 3. Gate 4. Source Device summary Order code Marking Package Packing SD2931-11 SD2931-11 M174 epoxy sealed Tray March 2010 Doc ID 17329 Rev 1 1/18 www.st.com 18 Content SD2931-11 Content 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Typical performance 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Typical performance 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 Test circuit 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 Doc ID 17329 Rev 1 SD2931-11 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG 1.2 Parameter Value Unit Drain source voltage 125 V Drain-gate voltage (RGS = 1MΩ) 125 V Gate-source voltage ±20 V Drain current 20 A Power dissipation 389 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.45 °C/W Storage temperature Thermal data Table 3. Symbol Rth(j-c) Thermal data Parameter Junction -case thermal resistance Doc ID 17329 Rev 1 3/18 Electrical specification 2 SD2931-11 Electrical specification (TCASE = 25 °C). Table 4. Static Symbol Test conditions Min. 125 Typ. Max. Unit V(BR)DSS VGS = 0 V IDS = 100 mA IDSS VGS = 0 V VDS = 50 V 50 µA IGSS VGS = 20 V VDS = 0 V 250 nA VGS(Q)(1) VDS = 10 V ID = 250 mA VDS(ON) VGS = 10 V ID = 10 A GFS* VDS = 10 V ID = 5 A CISS VGS = 0 V VDS = 50 V COSS VGS = 0 V CRSS VGS = 0 V V see table below 3.0 V V see table below mho f = 1 MHz 480 pF VDS = 50 V f = 1 MHz 190 pF VDS = 50 V f = 1 MHz 18 pF 1. VGS(Q) and GFS sorted with alpha/numeric code marked on unit. Table 5. Dynamic Symbol Test conditions Typ. Max. Unit POUT VDD = 50 V f = 175 MHz 150 GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB VDD = 50 V 55 65 % hD IDQ = 250 mA IDQ = 250 mA POUT = 150 W f = 175 MHz VDD = 50 V IDQ = 250 mA POUT = 150 W Load Mismatch all phase angles 4/18 Min. Doc ID 17329 Rev 1 f = 175 MHz 10:1 W VSW R SD2931-11 Table 6. Electrical specification VGS and GFS sorts VGS Code GFS VGS Code Min. Max. Min. Max. A 2.4 2.65 5.0 5.5 B 2.4 2.65 5.5 C 2.4 2.65 D 2.4 E GFS Min. Max. Min. Max. J 2.65 3.15 6.5 7.0 6.0 K 2.65 3.15 7.0 7.5 6.0 6.5 L 2.65 3.15 7.5 8.0 2.65 6.5 7.0 M 3.15 3.3 5.0 5.5 2.4 2.45 7.0 7.5 N 3.15 3.3 5.5 6.0 F 2.4 2.65 7.5 8.0 O 3.15 3.3 6.0 6.5 G 2.65 3.15 5.0 5.5 P 3.15 3.3 6.5 7.0 H 2.65 3.15 5.5 6.0 Q 3.15 3.3 7.0 7.5 I 2.65 3.15 6.0 6.5 R 3.15 3.3 7.5 8.0 Doc ID 17329 Rev 1 5/18 Impedance data 3 SD2931-11 Impedance data Figure 2. Impedance data D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S Table 7. 6/18 Impedance data Freq ZIN (Ω) ZDL (Ω) 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 Doc ID 17329 Rev 1 SD2931-11 Typical performance 4 Typical performance Figure 3. Capacitance vs drain-source voltage Figure 4. 10000 Drain current vs gate voltage 20 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) Tc=-20 °C f =1MHz 1000 Ciss Coss 100 Tc=+25 °C 15 10 Tc=+80 °C VDS = 10 V 5 Crss 0 10 0 10 20 30 40 2 50 2.5 3 Gate-source voltage vs case temperature Figure 6. 4 4.5 5 5.5 6 Maximum thermal resistance vs case temperature 1.12 0.6 Id =9A 1.08 Id =10A Id =7A Id =5A 1.04 Id =11A 1 0.96 Id =4A Id =2A 0.92 Id =1A 0.88 RTH(j-c) (°C/W) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 5. 3.5 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) 0.56 0.52 0.48 Id =.25A Vds= 10 V 0.84 Id =.1A 0.44 25 0.8 -25 0 25 50 75 100 35 45 55 65 75 85 Tc, CASE TEMPERATURE (°C) Tc, CASE TEMPERATURE (°C) Doc ID 17329 Rev 1 7/18 Typical performance Figure 7. SD2931-11 Safe operating area Ids(A) 100 10 (1) 1 1 10 100 1000 Vds(V) (1) Current in this area may be limited by Rds(on) 8/18 Doc ID 17329 Rev 1 SD2931-11 Typical performance 175 MHz 5 Typical performance 175 MHz Figure 8. Output power vs input power Figure 9. Output power vs input power at different temperatures 270 240 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 270 Vdd= 50V 210 180 Vdd= 40V 150 120 90 60 f= 175MHz Idq= 250mA 30 0 0 5 10 15 20 180 Tc =+80 °C 150 120 90 Vdd= 50V Idq= 250mA f= 175MHz 60 30 0 25 0 5 10 20 25 Figure 11. Efficiency vs output power 80 16 70 Nd, EFFICIENCY (%) 18 14 12 10 Vdd=50V Idq=250mA f=175Mhz 60 50 40 Vdd=50V Idq=250mA f=175Mhz 30 6 20 0 50 100 150 200 250 0 50 100 Pout, OUTPUT POWER (W) 150 200 250 Pout, OUTPUT POWER (W) Figure 12. Output power vs supply voltage Figure 13. Drain current vs gate-source voltage 270 20 Pin =10W 240 Tc=-20 °C ID, DRAIN CURRENT (A) Pout,OUTPUT POWER(W) 15 Pin, INPUT POWER(W) Figure 10. Power gain vs output power Gp, POWER GAIN (dB) Tc =+25 °C 210 Pin, INPUT POWER (W) 8 Tc =-20 °C 240 210 Pin =5W 180 150 Pin =2.5W 120 90 60 Tc=+25 °C 15 10 Tc=+80 °C 5 Idq= 250mA f= 175MHz 30 0 0 24 28 32 36 40 44 48 52 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) Vdd,DRAIN VOLTAGE(V) Doc ID 17329 Rev 1 9/18 Test circuit 6 SD2931-11 Test circuit Figure 14. 175 MHz test circuit schematic (production test circuit) Note: All dimensions in inches REF. 1021579C Table 8. 10/18 Component part list Component Description T1 4:1 transformer, 25 ohm flexible coax .090 OD 6” long T2 1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long FB1 Toroid X 2, 0.5” OD .312” ID 850µ 2 turns FB2, FB3 VK200 FB4 Shield bead, 1” OD 0.5” ID 850µ 3 turns L1 1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55 R1, R3 470 ohm 1 W chip resistor R2 360 ohm 1/2 W resistor R4 20 Kohm 10 turn potentiometer R5 560 ohm 1 W resistor C1, C11 470 pF ATC chip cap C2 43 pF ATC chip cap C3, C8, C9 Arco 404, 12-65 pF C4 Arco 423, 16-100 pF Doc ID 17329 Rev 1 SD2931-11 Test circuit Table 8. Component part list (continued) Component Description C5 120 pF ATC chip cap C6 0.01 µF ATC chip cap C7 30 pF ATC chip cap C10 91 pF ATC chip cap C12, C15 1200 pF ATC chip cap C13, C14,C16, C17 0.01 µF / 500 V chip cap C18 10 µF 63 V electrolytic capacitor 4 inches Figure 15. 175 MHz test circuit photomaster 6.4 inches Doc ID 17329 Rev 1 11/18 Test circuit SD2931-11 Figure 16. 175 MHz test circuit 12/18 Doc ID 17329 Rev 1 SD2931-11 7 Typical performance 30 MHz Typical performance 30 MHz Figure 17. Output power vs input power Figure 18. Power gain vs output power Pout, OUTPUT POWER (W) 250 30 PG, POWER GAIN (dB) Vdd = 50 V 200 150 Vdd = 40 V 100 f = 30 MHz IDQ = 250 mA 50 0 0 0.1 0.2 0.3 0.4 29 28 27 f = 30 MHz VDD = 50 V IDQ = 250 mA 26 25 24 0.5 0 40 Pin, INPUT POWER (W) 80 120 160 200 Pout, OUTPUT POWER (W) Figure 19. Efficiency vs output power Figure 20. Output power vs supply voltage 70 200 Pin=.31 W 50 Pin=.22 W 150 Pout(W) Efficiency (%) 60 40 30 f = 30 MHz VDD = 50 V IDQ = 250 mA 20 10 100 Pin=.13 W 50 f = 30 MHz IDQ = 250 mA 0 0 40 80 120 160 200 0 24 Pout, OUTPUT POWER (W) 28 32 36 40 44 48 52 VDD(V) Pout, OUTPUT POWER (W) Figure 21. Output power vs gate voltage 200 T= +25 °C T= -20 °C 150 T= +80 °C 100 VDD = 50 V IDQ = 250 mA f = 30 MHz Pin = Constant 50 0 0 1 2 3 4 5 6 VGS GATE-SOURCE VOLTAGE (V) Doc ID 17329 Rev 1 13/18 Test circuit 30 MHz 8 SD2931-11 Test circuit 30 MHz Figure 22. 30 MHz test circuit schematic (engineering test circuit) Figure 23. 30 MHz test circuit component part list Symbol T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long FB1 Toroid 1.7” OD .30” ID 220 µ 4 turns FB2 Surface mount EMI shield bead FB3 Toroid 1.7” OD .300” ID 220µ 3 turns RFC1 Toroid 0.5” OD 0.30” ID 125µ 4 turns 12 awg wire PCB 0.62” Woven Fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55 R1, R3 R2 14/18 Description 1 KΩ 1 W chip resistor 680 Ω 3 W wirewound resistor C1,C4,C6,C7,C8, C9,C11,C12,C13 0.1 µF ATC chip cap C2,C3 750 pF ATC chip cap C5 470 pF ATC chip cap C10 10 µF 63 V electrolytic capacitor C14 100 µF 63 V electrolytic capacitor Doc ID 17329 Rev 1 SD2931-11 9 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 17329 Rev 1 15/18 Package mechanical data Table 9. SD2931-11 M174 (0.500 DIA 4/L N/HERM W/FLG) mechanical data mm. Inch Dim. Min A Typ 5.56 B Max Min 5.584 0.219 3.18 Typ Max 0.230 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 0.980 G 12.57 12.83 0.495 0.505 H 0.08 0.18 0.003 0.007 I 2.11 3.00 0.083 0.118 J 3.81 4.45 0.150 0.175 K 7.11 0.280 L 25.53 26.67 1.005 1.050 M 3.05 3.30 0.120 0.130 Figure 24. Package dimensions Controlling Dimension: Inches 16/18 1011000D Doc ID 17329 Rev 1 SD2931-11 10 Revision history Revision history Table 10. Document revision history Date Revision 30-Mar-2010 1 Changes Initial release. Doc ID 17329 Rev 1 17/18 SD2931-11 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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