SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES ■ LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ ESD PROTECTION (± 2kV HBM) ■ 70 GHz Silicon Germanium TECHNOLOGY ■ LEAD-FREE STRAIGHT PACKAGE (SOT666) Figure 1. Package SOT666 (Lead-Free) 1.65 x 1.2 x 0.57 mm 1 6 Top View 2 5 3 APPLICATIONS ■ GPS DESCRIPTION SMA661AS is a product of the SMA Family (Silicon MMIC Amplifiers), it uses ST state-of-the art SiGe BiCMOS technology. The excellent RF performances (17dB Gain and 1.4dB NF at 1.575GHz) and the few external component counts (just one capacitor) make the SMA661AS an ideal solution for GPS Low Noise Amplifier. SMA661AS embeds a power down function avoiding to use an external switch; in power down mode (VPD ≤ VPDL ) the current consumption is about 10 nA. It is housed in ultra miniature SOT666 plastic package (1.65mm x 1.2mm x 1.57mm). 4 Table 1. Pin Connection Pin No. Pin Name 1 RF IN 2 GND 3 PD 4 RF OUT 5 GND 6 Vcc Table 2. Order Codes Package Tape and Reel SOT666 SMA661ASTR Figure 2. Circuit Schematic VCC (6) C1 RF input RF OUT(4) RF IN (1) SMA661AS 33nF RF Output PD (3) GND (2,5) Rev. 2 October 2005 1/10 SMA661AS Table 3. Absolute Maximum Ratings Symbol Vcc Tstg Ta Parameter Conditions Value Supply voltage Unit 3.3 V o Storage temperature -60 to +150 Operating ambient temperature -40 to +85 oC C VESD Electrostatic Discharge HBM (ALL PINs) ± 2000 V VESD Electrostatic Discharge MM (ALL PINs) ± 200 V ELECTRICAL CHARACTERISTICS (Ta = +25 oC, Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Table 4. Electrical Characteristics Symbol Parameters f Frequency Vcc Supply voltage Icc Current Consumption IPD Power Down Mode Current Consumption Gp Test Conditions Min. Typ. Max. 1575 2.53 2.7 Unit MHz 2.87 V 8.5 mA 10 nA Power gain 17 dB NF Noise figure 1.4 dB IIP2 Input IP2 f1 = 849 MHz, f2 = 2424 MHz, Pin = -30 dBm 0.5 dBm IIP3 Input IP3 f1 = 1574.5 MHz, f2 = 1575.5 MHz, Pin = -30 dBm 3 dBm ISL Reverse Isolation -28 dB RLin Input Return Loss f = 1500-1650 MHz 10 dB RLout Output Return Loss f = 1500-1650 MHz 10 dB VPDL(1) Power Down Low State VPDH(2) Power Down High State Stability Note: (1) The device is switched to OFF state (2) The device is switched to ON state 2/10 VPD ≤ VPDL 0.5 1.0 100 - 10000 MHz Unconditionally stable V V SMA661AS TYPICAL PERFORMANCE (Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Figure 3. Power Gain Vs Frequency Figure 6. Reverse Isolation Vs Frequency 22 -20 21 -22 20 -24 Ta = -40 ºC 19 Ta = -40 ºC -26 18 17 ISL (dB) Gp (dB) Ta = +25 ºC Ta = +25 ºC Ta = +85 ºC 16 15 -28 Ta = +85 ºC -30 -32 14 -34 13 -36 12 11 -38 10 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 -40 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) f (MHz) Figure 4. Input Return Loss Vs Frequency Figure 7. Output Return Loss Vs Frequency 0 0 -2 -2 -4 -4 Ta = -40 ºC -6 ORL (dB) -8 IRL (dB) -6 Ta = +25 ºC -10 Ta = +85 ºC -12 Ta = +85 ºC -8 Ta = +25 ºC -10 Ta = -40 ºC -12 -14 -14 -16 -16 -18 -18 -20 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 f (MHz) -20 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 Figure 5. Noise Figure Vs Frequency f (MHz) Figure 8. IIP3 Vs Temperature 3.0 5 4.5 2.5 1.5 1.0 Ta = +85 ºC IIP3 (dBm) NF (dB) 2.0 4 3.5 Ta = +25 ºC 3 2.5 2 Ta = -40 ºC 1.5 1 0.5 0.5 0.0 1500 0 1520 1540 f (MHz) 1560 1580 1600 -40 25 T (°C) 85 3/10 SMA661AS TYPICAL PERFORMANCE (Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Figure 9. Current Consumption vs Temp. Figure 11. Power Down Current Vs Temp. 60 8.5 8.4 50 8.3 8.2 40 Ipd (nA) Icc (mA) 8.1 30 8 7.9 20 7.8 7.7 10 7.6 0 7.5 -40 25 T (°C) +85 Figure 10. Gain Power Down Vs Temperature -15 -16 -17 Gpd (dB) -18 -19 -20 -21 -22 -23 -24 -25 -40 4/10 25 T (°C) +85 -40 -15 10 T (°C) 35 60 85 SMA661AS TYPICAL PERFORMANCE (Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Figure 12. Stability 5 4.5 4 3.5 3 K 2.5 2 1.5 1 0.5 0 0 -K 1 2 3 4 5 6 7 8 9 10 f (GHz) 5/10 SMA661AS Figure 13. Application Board C2 47p C3 J1 C1 1uF 1 2 Vcc JP1 U1 1 RF IN 3 3n F 2 C5 3 RFin Vcc GND GND PD SMA661 SMA661AS R Fout 6 5 4 J2 RF OUT 4 7p VPdown C6 1 uF Table 5. Bill of Material Component Value Type Manufacturer Function C1 1uF (electrolytic) Case_A Various Supply Filter C2 47 pF 0603 Murata (GRM18) RF Bypass C3 33 nF 0603 Murata (GRM18) Input dc block / IIP3 improvement C5 47 pF 0603 Murata (GRM18) RF Bypass C6 1 uF (electrolytic) Case_A Various Supply Filter J1 - 142-0711-841 (SMA_Female) Johnson RF Input connector J2 - 142-0711-841 (SMA_Female) Johnson RF Output connector U1 - SOT666 STMicroelectronics SMA661AS GPS LNA Substrate - FR4 18mm x 20mm x 1.1mm Various Layer = 3 (see Figures 14/15) 6/10 SMA661AS Figure 14. Application Board Layout 20 mm 18 mm Figure 15. Application Board Cross Section 7/10 SMA661AS PACKAGE MECHANICAL Table 6. SOT666 (Lead-Free) Package DIM. A mm. MIN. TYP MAX. 0.53 0.57 0.60 A3 0.13 0.17 018 D 1.50 1.66 1.70 E 1.50 1.65 1.70 E1 1.10 1.20 1.30 L1 0.11 0.19 0.26 L2 0.10 0.23 0.30 L3 0.05 0.10 b 0.17 b1 0.27 e 0.50 Bsc e1 0.20 θ 8o Figure 16. SOT666 (Lead-Free) Package Dimensions 8/10 0.25 10o 0.34 12o SMA661AS REVISION HISTORY Table 7. Revision History Date Revision Description of Changes July 2005 1 First Issue. October 2005 2 Added: Evaluation Board Schematic & Layout 9/10 SMA661AS Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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