NJG1143UA2 GPS LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION The NJG1143UA2 is a GPS LNA GaAs MMIC featured very samll size, low noise figure, high gain and low current consumpition. The NJG1143UA2 operates from 1.5V to 3.6V single voltage, has stand-by mode to save the supply current, and requires only three external components. The NJG1143UA2 has a on-chip ESD protection. The NJG1143UA2 is available in a very small, lead-free, halogen-free, 1.0mm x 1.0mm x 0.37 mm, 6-pin EPFFP6-A2 package. ! PACKAGE OUTLINE NJG1143UA2 ! FEATURES " Low supply voltage " Low control voltage " Low current consumption +2.85V typ. (+1.5V~+3.6V) +1.8V typ. (+1.5V~+3.6V) 4.0mA typ. @VDD=2.85V, VCTL=1.8V 7μA typ. @VDD=2.85V, VCTL=0V, Stand-by mode " High gain 20.0dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz " Low noise figure 0.70dB typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz " Input power at 1dB gain compression point -16.5dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575MHz " High input IP3 -2.0dBm typ. @VDD=2.85V, VCTL=1.8V, f=1575+1575.1MHz " Stand-by function " Small package size EPFFP-A2 (Package size: 1.0mmx1.0mmx0.37mm typ.) " Integrated ESD protection circuit " Lead-free and halogen-free ! PIN CONFIGURATION (Top View) GND 5 6 4 RFIN VDD Bias Circuit GND Logic Circuit Pin Connection 1. GND 2. VCTL 3. RFOUT 4. VDD 5. GND 6. RFIN RFOUT 1 3 VCTL 2 ! TRUTH TABLE “H”=VCTL(H), “L”=VCTL(L) VCTL H L LNA Mode Active mode Stand-by mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2010-07-17 -1- NJG1143UA2 ! ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50Ω PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage VDD 5.0 V Control voltage VCTL 5.0 V Input power PIN VDD=2.85V +15 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (101.5mmx114.5mm), Tj=150°C 590 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+150 °C ! ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: Ta=+25°C, Zs=Zl=50Ω) PARAMETER Supply Voltage SYMBOL CONDITIONS MIN TYP MAX UNIT VDD VDD Terminal 1.5 - 3.6 V Control Voltage (High) VCTL(H) VCTL Terminal 1.5 1.8 3.6 V Control Voltage (Low) VCTL(L) VCTL Terminal 0 0 0.3 V - 4.0 6.5 mA - 3.0 4.7 mA - 7.0 15.0 μA - 4.0 10.0 μA - 5.0 12.0 μA Supply Current 1 IDD1 Supply Current 2 IDD2 Supply Current 3 IDD3 Supply Current 4 IDD4 Control Current ICTL -2- Active mode VDD Terminal VDD=2.85V, VCTL=1.8V Active mode VDD Terminal VDD=1.8V, VCTL=1.8V Stand-by mode VDD Terminal VDD=2.85V, VCTL=0V Stand-by mode VDD Terminal VDD=1.8V, VCTL=0V VCTL=1.8V, VCTL Terminal NJG1143UA2 ! ELECTRICAL CHARACTERISTICS 2 (RF, VDD=2.85V) (General conditions: VDD=2.85V, VCTL=1.8V, Freq=1.575GHz,Ta=+25°C, Zs=Zl=50Ω, with application circuit) PARAMETER Small Signal Gain 1 Noise Figure 1 Input Power at 1dB Gain Compression Point 1 Input 3rd Order Intercept Point 1 SYMBOL CONDITIONS Gain1 NF1 Exclude PCB and connector Losses (0.08dB) P-1dB(IN) _1 IIP3_1 RF Input Port VSWR 1 VSWRi1 RF Output Port VSWR 1 VSWRo1 f1=Freq f2=Freq+100kHz Pin=-34dBm MIN TYP MAX UNIT 17.5 20.0 22.0 dB - 0.70 0.95 dB -19.0 -16.5 - dBm -6.0 -2.0 - dBm - 1.5 2.0 1.5 2.0 ! ELECTRICAL CHARACTERISTICS 3 (RF, VDD=1.8V) (General conditions: VDD=1.8V, VCTL=1.8V, Freq=1.575GHz,Ta=+25°C, Zs=Zl=50Ω, with application circuit) PARAMETER Small Signal Gain 2 Noise Figure 2 Input Power at 1dB Gain Compression Point 2 Input 3rd Order Intercept Point 2 SYMBOL CONDITIONS Gain2 NF2 Exclude PCB and connector Losses (0.08dB) P-1dB(IN) _2 IIP3_2 RF Input Port VSWR 2 VSWRi2 RF Output Port VSWR 2 VSWRo2 f1=Freq f2=Freq+100kHz Pin=-34dBm MIN TYP MAX UNIT 16.5 19.0 21.0 dB - 0.75 1.10 dB -22.0 -19.5 - dBm -10.0 -6.0 - dBm - 1.5 2.3 1.3 1.7 -3- NJG1143UA2 ! TERMINAL INFORMATION -4- No. SYMBOL DESCRIPTION 1 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 2 VCTL Control voltage terminal. Inputting a logic-high, the LNA turn at LNA active mode. Inputting a logic-low, the LNA turn at stand-by mode. 3 RFOUT RF output terminal. Requires an external capacitor C1. The capacitor C1 is not only a matching component , but also a DC blocking capacitor. 4 VDD Supply voltage terminal. Bypass to ground with capacitor C2 as close as possible to the IC. 5 GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 6 RFIN RF input terminal. Requires a maching inductor L1. Integrated a DC blocking capaciotr. NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Conditions: VDD=2.85V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) -5- NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Conditions: VDD=2.85V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit IDD, ICTL vs. VCTL NF, Gain vs. frequency (VDD=2.85V, VCTL=1.8V) 21 6 20 5 2 19 4 1.5 18 3 30 25 1 NF 0.5 IDD 20 3 17 2 16 1 15 1.75 0 15 ICTL (uA) IDD (mA) Gain Gain (dB) Noise Figure (dB) 2.5 (VDD=2.85V, RF OFF) 10 ICTL 5 (NF: Exclude PCB, Connector Losses) 1.55 1.6 1.65 1.7 0 0 0.5 1 1.5 Pout vs. Pin Gain, IDD vs. Pin (VDD=2.85V, VCTL=1.8V, fRF=1575MHz) (VDD=2.85V, VCTL=1.8V, fRF=1575MHz) 24 22 5 Pout Gain (dB) Pout (dBm) 0 -5 -10 -15 P-1dB(IN)=-16.0dBm 9 20 8 18 7 16 6 IDD 14 -30 -20 -10 0 2 8 -40 10 -30 -20 -10 0 10 Pin (dBm) Pout, IM3 vs. Pin OIP3, IIP3 vs. frequency (VDD=2.85V, VCTL=1.8V, fRF=1575+1575.1MHz) (VDD=2.85V, VCTL=1.8V, df=100kHz, Pin=-34dBm) 24 -40 -60 IM3 -80 IIP3=-1.3dBm -30 -20 -10 Pin (dBm) 0 10 10 8 22 Pout -20 -6- 3 P-1dB(IN)=-16.0dBm 20 -100 -40 5 4 10 OIP3 (dBm) Pout, IM3 (dBm) 0 10 Gain Pin (dBm) 20 3 12 -20 -25 -40 2.5 VCTL (V) frequency (GHz) 10 2 IDD (mA) 1.5 OIP3 6 18 4 16 2 0 14 IIP3 12 -2 10 -4 8 1.45 1.5 1.55 1.6 1.65 frequency (GHz) 1.7 -6 1.75 IIP3 (dBm) 0 1.45 NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Conditions: VDD=2.85V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit (VDD=2.85V, VCTL=1.8V/0V, RF OFF) Gain (dB) 20 Gain 6 3 5 2.5 18 2 16 1.5 NF 14 1 12 0.5 IDD (mA) @active mode 22 3.5 30 25 IDD (Active mode) 4 20 3 15 2 10 IDD (Standby mode) 1 5 IDD (uA) @standby mode IDD vs. Temperature (VDD=2.85V, VCTL=1.8V, fRF=1575MHz) Noise Figure (dB) 24 Gain, NF vs. Temperature (NF: Exclude PCB, Connector Losses) 10 -50 0 0 -50 0 100 50 0 Temperature (oC) Temperature (oC) -8 0 100 50 P-1dB(IN) vs. Temperature OIP3, IIP3 vs. Temperature (VDD=2.85V, VCTL=1.8V, fRF=1575MHz) (VDD=2.85V, VCTL=1.8V, fRF=1575+1575.1MHz, Pin=-34dBm) 15 30 -10 -14 -16 P-1dB(IN) -18 10 OIP3 20 5 15 0 IIP3 -20 -5 10 -22 -24 -50 0 50 5 -50 100 0 Temperature (oC) Temperature (oC) k factor vs. frequency VSWR vs. Temperature 3 (VDD=2.85V, VCTL=1.8V, fRF=1575MHz) (VDD=2.85V, VCTL=1.8V) 20 VSWRi 2.5 VSWRo 15 2 k factor VSWRi, VSWRo -10 100 50 1.5 10 +85oC 1 5 +25oC 0.5 -40oC 0 -50 0 0 50 o Temperature ( C) 100 0 5 10 15 20 frequency (GHz) -7- IIP3 (dBm) OIP3 (dBm) P-1dB(IN) (dBm) 25 -12 NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit -8- S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit (VDD=1.8V, V CTL=1.8V) (VDD=1.8V, RF OFF) 6 20 5 25 2 19 4 20 1.5 18 2.5 Gain NF 1 0.5 Gain (dB) IDD (mA) 21 3 Noise Figure (dB) IDD, ICTL vs. VCTL 30 IDD 15 3 17 2 16 1 15 1.75 0 ICTL (uA) NF, Gain vs. frequency 10 ICTL 5 (NF: Exclude PCB, Connector Losses) 1.5 1.55 1.6 1.65 1.7 0 0 0.5 1 1.5 frequency (GHz) Pout vs. Pin Gain, IDD vs. Pin (VDD=1.8V, VCTL=1.8V, fRF=1575MHz) (VDD=1.8V, VCTL=1.8V, fRF=1575MHz) 24 8 Gain 7 Pout Gain (dB) Pout (dBm) 20 -15 -20 18 6 16 5 14 P-1dB(IN)=-20.0dBm -30 -20 -10 0 10 8 -40 10 3 2 P-1dB(IN)=-20.0dBm 1 -30 -20 Pin (dBm) -10 0 10 Pin (dBm) Pout, IM3 vs. Pin OIP3, IIP3 vs. frequency (VDD=1.8V, V CTL=1.8V, fRF=1575+1575.1MHz) (VDD=1.8V, V CTL=1.8V, df=100kHz, Pin=-34dBm) 20 18 16 -20 -40 -60 IM3 -80 -100 -40 6 4 Pout OIP3 (dBm) Pout, IM3 (dBm) 0 4 IDD 12 -25 20 9 22 -10 -30 -40 3 VCTL (V) 0 -5 2.5 IDD (mA) 5 2 IIP3=-5.6dBm -30 -20 -10 Pin (dBm) 0 10 2 OIP3 14 0 12 -2 10 -4 IIP3 8 -6 6 -8 4 1.45 1.5 1.55 1.6 1.65 1.7 -10 1.75 frequency (GHz) -9- IIP3 (dBm) 0 1.45 NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Conditions: VDD=1.8V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit IDD vs. Temperature 3 Gain 20 2.5 18 2 16 1.5 NF 14 1 12 IDD (mA) @active mode Gain (dB) 22 5 3.5 Noise Figure (dB) 24 (VDD=1.8V, V CTL=1.8V, fRF=1575MHz) 4 (VDD=1.8V, V CTL=1.8V/0V, RF OFF) 25 20 IDD (Active mode) 15 3 10 2 IDD (Standby mode) 5 1 0.5 IDD (uA) @standby mode Gain, NF vs. Temperature (NF: Exclude PCB, Connector Losses) 0 0 -50 0 100 50 0 Temperature (oC) Temperature (oC) OIP3, IIP3 vs. Temperature P-1dB(IN) vs. Temperature -12 (VDD=1.8V, VCTL=1.8V, fRF=1575+1575.1MHz, Pin=-34dBm) 18 4 (VDD=1.8V, V CTL=1.8V, fRF=1575MHz) 16 14 -16 OIP3 (dBm) P-1dB(IN) (dBm) -14 -18 -20 P-1dB(IN) -22 2 OIP3 0 12 -2 10 -4 8 IIP3 -6 -24 6 -8 -26 4 -10 -28 -50 0 50 2 -50 100 0 k factor vs. frequency VSWR vs. Temperature 3 -12 100 50 Temperature (oC) Temperature (oC) (VDD=1.8V, VCTL=1.8V, fRF=1575MHz) (VDD=1.8V, V CTL=1.8V) 20 VSWRi 2.5 VSWRo 15 2 k factor VSWRi, VSWRo 0 100 50 1.5 10 +85oC 1 5 +25oC 0.5 0 -50 -40oC 0 0 50 o Temperature ( C) - 10 - 100 0 5 10 frequency (GHz) 15 20 IIP3 (dBm) 10 -50 NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Conditions: RF OFF, Zs=Zl=50Ω, with application circuit 5 IDD vs. VCTL IDD vs. VDD (VDD=2.85V, RF OFF) (VCTL=1.8V, RF OFF) 6 5 4 +85oC IDD (mA) IDD (mA) 4 3 o +85 C 2 +25oC 3 +25oC 2 -40oC -40oC 1 IDD 1 0 0 0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 VCTL (V) 14 12 3.5 4 IDD vs. VDD ICTL vs. Temperature (VCTL=0V, RF OFF) (VDD=2.85V or 1.8V, V CTL=1.8V, RF OFF) 14 4.5 12 +85oC 10 ICTL (uA) 10 IDD (uA) 3 VDD (V) 8 IDD 6 8 6 ICTL o 4 4 +25 C -40oC 2 2 0 1 1.5 2 2.5 3 VDD (V) 3.5 4 4.5 0 -50 0 50 100 o Temperature ( C) - 11 - NJG1143UA2 ! ELECTRICAL CHARACTERRISTICS Condition: VCTL=1.8V, Ta=+25oC, Zs=Zl=50Ω, with application circuit (VCTL=1.8V/0V, RF OFF) 20 3 6 2.5 5 Gain (dB) Gain 19 2 18 1.5 NF 17 1 0.5 16 30 25 IDD (Active mode) 4 20 3 15 2 10 IDD (Standby mode) 1 5 IDD (uA) @standby mode IDD vs. VDD (VCTL=1.8V, fRF=1575MHz) Noise Figure (dB) IDD (mA) @active mode 21 Gain, NF vs. VDD (NF: Exclude PCB, Connector Losses) 1 1.5 2 2.5 3 3.5 0 0 4.5 15 4 1 1.5 2 3 3.5 4 0 4.5 VDD (V) VDD (V) -5 2.5 P-1dB(IN) vs. VDD OIP3, IIP3 vs. VDD (VCTL=1.8V, fRF=1575MHz) (VCTL=1.8V, fRF=1575+1575.1MHz, Pin=-34dBm) 22 8 20 6 18 4 -15 P-1dB(IN) -20 16 2 OIP3 14 0 IIP3 12 -2 10 -4 8 -6 -25 -30 6 1 1.5 2 2.5 3 3.5 4.5 1 1.5 2 2.5 3 3.5 4 VDD (V) VDD (V) VSWR vs. VDD k factor vs. frequency (VCTL=1.8V, fRF=1575MHz) 3 -8 4.5 (VCTL=1.8V) 20 VSWRi 2.5 VSWRo 15 2 k factor VSWRi, VSWRo 4 1.5 10 VDD=1.2V 1 VDD=2.85V, 4V 5 0.5 0 0 1 1.5 2 2.5 3 VDD (V) - 12 - 3.5 4 4.5 0 5 10 frequency (GHz) 15 20 IIP3 (dBm) OIP3 (dBm) P-1dB(IN) (dBm) -10 NJG1143UA2 ! APPLICATION CIRCUIT (Top View) L1 9.1nH RF GND 5 6 4 RFIN VDD C2 1000pF VDD Bias Circuit Logic Circuit GND C1 2pF RFOUT 1 3 VCTL RF OUT 2 VCTL • L1 is an iutput matching inductor. • C1 is an output matching capacitor and a DC blocking capacitor. • C2 is a bypass capacitor. ! TEST PCB LAYOUT (Top View) Parts list Parts ID L1 VDD RF IN L1 C2 C1, C2 RF OUT C1 Manufacture LQP03T_02 Series (MURATA) GRM03 Series (MURATA) PCB Substrate: FR-4 Thickness: 0.2mm Microstrip line width: 0.4mm (Z0=50Ω) Size: 14.0mm x 14.0mm VCTL - 13 - NJG1143UA2 ! NOISE FIGURE MEASUREMENT CONDITONS Measuring instruments NF Analyzer : Agilent 8973A, 8975A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 16 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (303.15K) NF Analyzer (Agilent 8973A, 8975A) Noise Source (Agilent 346A) * Noise source and NF analyzer Input (50Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 8973A, 8975A) Noise Source (Agilent 346A) * Noise source and DUT, IN DUT OUT Measurement Setup - 14 - Input (50Ω) Noise Source Drive Output DUT and NF analyzer are connected directly. NJG1143UA2 ! PACKAGE OUTLINE (EPFFP6-A2) Unit Substrate Terminal treat Molding material Weight (typ.) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. : mm : FR4 : Au : Epoxy resin : 0.855mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 15 -