STMICROELECTRONICS STA516B13TR

STA516B
60 V 6 A quad power half bridge
Features
■
Minimum input output pulse width distortion
■
200 mΩ RdsON complementary DMOS output
stage
■
CMOS compatible logic inputs
■
Thermal protection
■
Thermal warning output
■
Under voltage protection
Power SO36 slug up
Description
STA516B is a monolithic quad half bridge stage in
Multipower BCD Technology. The device can be
used as dual bridge or reconfigured, by
connecting CONFIG pin to Vdd pin, as single
bridge with double current capability, and as half
bridge (Binary mode) with half current capability.
The device is particularly designed to make the
output stage of a stereo all-digital high efficiency
(DDX™) amplifier capable to deliver 160 + 160 W
@ THD = 10 % at Vcc 50 V output power on 8 Ω
load and 320 W @ THD = 10 % at Vcc 50V on 4 Ω
load in single BTL configuration.
The input pins have threshold proportional to VL
pin voltage.
Table 1.
Device summary
Part number
Package
Packaging
STA516B
Power SO36 slug up
Tube
STA516B13TR
Power SO36 slug up
Tape and reel
March 2007
Rev 2
1/13
www.st.com
1
Contents
STA516B
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Pin lists . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Power supply and control sequencing . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6
Mechanical and package data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STA516B
1
Introduction
Introduction
Figure 1.
Application circuit (dual BTL)
+VCC
VCC1A
IN1A
29
VL
23
M3
IN1A
+3.3V
PWRDN
R57
10K
R59
10K
C58
100nF
TH_WAR
CONFIG
24
PWRDN
25
FAULT
27
26
17
16
M2
PROTECTIONS
&
LOGIC
TRI-STATE
M5
TH_WAR
28
IN1B
30
VDD
21
VDD
22
VSS
33
C53
100nF
VSS
34
C60
100nF
VCCSIGN
IN2A
IN2A
GND-Reg
GND-Clean
IN2B
GND1A
12
VCC1B
M4
REGULATORS
GND1B
7
VCC2A
IN2B
GNDSUB
8
M15
31
20
M16
1
C32
1µF
4
VCC2B
OUT2B
OUT2B
M14
5
8Ω
C21
100nF
C110
100nF
C109
330pF R103
6
C33
1µF
3
R100
6
C99
100nF
C23
470nF
C101
100nF
L113 22µH
OUT2A
GND2A
R98
6
L19 22µH
OUT2A
6
2
32
R63
20
OUT1B
13
9
19
C52
330pF
OUT1B
35
36
C20
100nF
C31
1µF
11
C55
1000µF
L18 22µH
OUT1A
OUT1A
M17
VCCSIGN
C30
1µF
14
10
IN1B
C58
100nF
15
R104
20
R102
6
C107
100nF
C108
470nF
C106
100nF
8Ω
C111
100nF
L112 22µH
GND2B
D00AU1148B
3/13
Pin lists
2
STA516B
Pin lists
Table 2.
Pin function
Number
4/13
Pin
Description
1
GND-SUB
Substrate ground
2, 3
OUT2B
Output half bridge 2B
4
Vcc2B
Positive supply
5
GND2B
Negative supply
6
GND2A
Negative supply
7
Vcc2A
Positive supply
8, 9
OUT2A
Output half bridge 2A
10, 11
OUT1B
Output half bridge 1B
12
Vcc1B
Positive supply
13
GND1B
Negative supply
14
GND1A
Negative supply
15
Vcc1A
Positive supply
16, 17
OUT1A
Output half bridge 1A
18
NC
Not connected
19
GND-clean Logical ground
20
GND-Reg
Ground for regulator Vdd
21, 22
Vdd
5 V regulator referred to ground
23
VL
High logical state setting voltage
24
CONFIG
Configuration pin
25
PWRDN
Stand-by pin
26
TRI-STATE Hi-Z pin
27
FAULT
Fault pin advisor
28
TH-WAR
Thermal warning advisor
29
IN1A
Input of half bridge 1A
30
IN1B
Input of half bridge 1B
31
IN2A
Input of half bridge 2A
32
IN2B
Input of half bridge 2B
33, 34
Vss
5 V regulator referred to +Vcc
35, 36
Vcc sign
Signal positive supply
STA516B
Pin lists
Table 3.
Functional pin status
Pin name
FAULT
Logical value
Status
0
Fault detected (short circuit or thermal for example)
1
Normal operation
TRI-STATE
0
All powers in Hi-Z state
TRI-STATE
1
Normal operation
PWRDN
0
Low absorption
PWRDN
1
Normal operation
THWAR
0
Temperature of the IC =130 oC
THWAR(1)
1
Normal operation
CONFIG
0
Normal operation
CONFIG(2)
1
OUT1A=OUT1B; OUT2A=OUT2B
(IF IN1A = IN1B; IN2A = IN2B)
FAULT
(1)
1. The pin is open collector. To have the high logic value, it needs to be pulled up by a resistor.
2. To put CONFIG = 1 means connect Pin 24 (CONFIG) to Pins 21, 22 (Vdd)
Figure 2.
Pin connection
VCCSign
36
1
GND-SUB
VCCSign
35
2
OUT2B
VSS
34
3
OUT2B
VSS
33
4
VCC2B
IN2B
32
5
GND2B
IN2A
31
6
GND2A
IN1B
30
7
VCC2A
IN1A
29
8
OUT2A
TH_WAR
28
9
OUT2A
FAULT
27
10
OUT1B
TRI-STATE
26
11
OUT1B
PWRDN
25
12
VCC1B
CONFIG
24
13
GND1B
VL
23
14
GND1A
VDD
22
15
VCC1A
VDD
21
16
OUT1A
GND-Reg
20
17
OUT1A
GND-Clean
19
18
N.C.
D01AU1273
5/13
Electrical characteristics
STA516B
3
Electrical characteristics
Table 4.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
DC supply voltage (Pins 4,7,12,15)
60
V
Vmax
Maximum voltage on pins 23 to 32
5.5
V
Top
Operating temperature range
0 to 70
°C
Tstg, Tj
Storage and junction temperature
-40 to 150
°C
Table 5.
Thermal data
Symbol
Parameter
Min.
Typ.
Max.
Unit
Tj-case
Thermal resistance junction to case (thermal pad)
1
TjSD
Thermal shut-down junction temperature
150
°C
Twarn
Thermal warning temperature
130
°C
thSD
Thermal shut-down hysteresis
25
°C
Table 6.
2.5
°C/W
Electrical characteristics
(VL= 3.3 V; Vcc = 50 V; Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
RdsON
Power Pchannel/Nchannel MOSFET
RdsON
Idss
Power Pchannel/Nchannel leakage Idss
gN
Power Pchannel RdsON matching
Id=1A
95
%
gP
Power Nchannel RdsON matching
Id=1A
95
%
Dt_s
Low current dead time (static)
see Figure 4
Dt_d
High current dead time (dynamic)
L=22µH, C = 470nF
Rl = 8 Ω, Id=4.5A
see Figure 5
50
td ON
Turn-on delay time
Resistive load
100
ns
td OFF
Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load
see Figure 4
25
tf
Fall time
Resistive load
see Figure 4
25
VCC
Supply operating voltage
VIN-High
High level input voltage
VIN-Low
Low level input voltage
IIN-H
High level Input current
Pin voltage = VL
1
µA
IIN-L
Low level input current
Pin voltage = 0.3 V
1
µA
6/13
Id=1A
200
240
100
10
20
mΩ
µA
ns
ns
10
VL/2 -300mV
ns
ns
52
V
VL/2 +300mV
V
V
STA516B
Electrical characteristics
Table 6.
Electrical characteristics (continued)
(VL= 3.3 V; Vcc = 50 V; Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test conditions
IPWRDN-H High level PWRDN pin input current
Min.
VL= 3.3 V
VLow
Low logical state voltage VL (pin
PWRDN, TRISTATE)(seeTable 7)
VL = 3.3 V
VHigh
High logical state voltage VH (pin
PWRDN, TRISTATE)(seeTable 7)
VL = 3.3 V
IVCC-
Supply current from Vcc in power down PWRDN = 0
Typ.
Max.
Unit
µA
35
V
0.8
V
1.7
mA
3
PWRDN
IFAULT
Output current pins
FAULT -TH-WARN when
FAULT CONDITIONS
Vpin = 3.3 V
1
IVCC-hiz
Supply current from Vcc in Tristate
Tristate = 0
22
IVCC
Supply current from Vcc in operation
both channel switching)
Input pulse width
= 50 % duty
Switching frequency
= 384 Khz;
No LC filters
IOUT-SH
Over current protection threshold Isc
(short circuit current limit)1(1)
VUV
Under voltage protection threshold
VOV
Over voltage protection threshold
tpw_min
Output minimum pulse width
mA
mA
mA
70
6
8
A
10
7
No load
V
60
70
V
25
40
ns
1. See specific application note number: AN1994.
Table 7.
VLow, VHigh variation with VL
VL
VLow min
VHigh max
Unit
2.7
0.7
1.5
V
3.3
0.8
1.7
V
5
0.85
1.85
V
Table 8.
Logic truth table (see Figure 2)
Tristate
INxA
INxB
Q1
Q2
Q3
Q4
Output mode
0
x
x
OFF
OFF
OFF
OFF
Hi-Z
1
0
0
OFF
OFF
ON
ON
DUMP
1
0
1
OFF
ON
ON
OFF
NEGATIVE
1
1
0
ON
OFF
OFF
ON
POSITIVE
1
1
1
ON
ON
OFF
OFF
Not used
7/13
Power supply and control sequencing
4
STA516B
Power supply and control sequencing
To guarantee correct operation and reliability, a correct turn on/off sequence must be
followed. Figure 3 shows the correct power on sequence.
Figure 3.
Correct power-on sequence
V
Vcc
VL
Vcc > VL
t
PWRDN
IN
t
t
Vcc must turn on before VL in order to prevent uncontrolled current flowing through an
internal protection diode connected between VL (logic supply) and Vcc (high power supply).
Failure to do so could result in damage to the device.
PWRDN must be released after VL is switched on. An input signal can then be sent to the
power stage.
8/13
STA516B
5
Test
Test
Figure 4.
Test circuit
OUTxY
Vcc
(3/4)Vcc
Low current dead time = MAX(DTr,DTf)
(1/2)Vcc
(1/4)Vcc
+Vcc
t
DTr
Duty cycle = 50%
DTf
M58
OUTxY
INxY
R 8Ω
M57
V67 =
vdc = Vcc/2
+
-
gnd
Figure 5.
D03AU1458
Current dead time test circuit
High Current Dead time for Bridge application = ABS(DTout(A)-DTin(A))+ABS(DTOUT(B)-DTin(B))
+VCC
Duty cycle=A
Duty cycle=B
DTout(A)
M58
DTin(A)
Q1
Q2
INxA
Iout=4.5A
M57
Q3
DTout(B)
Rload=8Ω
OUTxA
L67 22µ
C69
470nF
L68 22µ
C71 470nF
C70
470nF
M64
DTin(B)
OUTxB
INxB
Iout=4.5A
Q4
Duty cycle A and B: Fixed to have DC output current of 4.5A in the direction shown in figure
M63
D00AU1162
9/13
Test
STA516B
Figure 6.
Typical single BTL configuration to obtain 320 W @ THD 10 %, RL = 4 W,
VCC = 50 V (a)
VL
+3.3V
GND-Clean
GND-Reg
100nF
X7R
10K
23
18
N.C.
12µH
100nF
VDD
VDD
CONFIG
TH_WAR
TH_WAR
PWRDN
nPWRDN
FAULT
10K
IN1A
IN1B
IN1A
IN2A
IN2B
IN1B
VSS
VSS
100nF
X7R
16
20
11
10
21
VCCSIGN
100nF
X7R
VCCSIGN
Add.
GNDSUB
OUT1A
100nF
FILM
OUT1A
OUT1B
22Ω
1/2W
OUT1B
6.2
1/2W
OUT2A
22
9
24
OUT2A
330pF
8
6.2
1/2W
OUT2B
28
3
25
15
26
29
12
30
7
31
4
4Ω
12µH
VCC1A
+36V
1µF
X7R
VCC1B
2200µF
63V
VCC2A
+36V
1µF
X7R
32
33
100nF
X7R
680nF
FILM
100nF
X7R
100nF
FILM
OUT2B
2
27
TRI-STATE
100nF
17
19
VCC2B
GND1A
34
14
GND1B
35
13
36
6
1
5
GND2A
GND2B
D04AU1545
Figure 7.
Typical quad half bridge configuration
+VCC
VCC1P
IN1A
M3
29
IN1A
+3.3V
PWRDN
R57
10K
R59
10K
C58
100nF
TH_WAR
VL
23
CONFIG
24
PWRDN
25
FAULT
27
26
16
M2
PROTECTIONS
&
LOGIC
TRI-STATE
M5
TH_WAR
28
IN1B
30
C58
100nF
C53
100nF
C60
100nF
VDD
21
22
VSS
33
VSS
34
VCCSIGN
IN2A
GND-Reg
GND-Clean
IN2B
PGND1P
12
VCC1N
C51
1µF
REGULATORS
13
7
PGND1N
VCC2P
C71
100nF
R51
6
C81
100nF
C61
100nF
OUTNL
OUTNL
M4
R41
20
C41
330pF
R42
20
C42
330pF
C72
100nF
R52
6
C82
100nF
IN2B
GNDSUB
9
36
M15
31
20
19
M16
1
OUTPR
6
PGND2P
4
VCC2N
3
2
32
OUTPR
C52
1µF
5
C43
330pF
PGND2N
D03AU1474
C73
100nF
R53
6
C83
100nF
C62
100nF
OUTNR
OUTNR
M14
R43
20
C44
330pF
R66
5K
R67
5K
L14 22µH
R44
20
R64
5K
R65
5K
L13 22µH
8
35
R62
5K
R63
5K
L12 22µH
M17
VCCSIGN
IN2A
OUTPL
OUTPL
11
R61
5K
L11 22µH
14
10
IN1B
VDD
15
17
C74
100nF
R54
6
C84
100nF
R68
5K
C21
2200µF
C31 820µF
C91
1µF
4Ω
C32 820µF
C92
1µF
4Ω
C33 820µF
C93
1µF
4Ω
C34 820µF
C94
1µF
4Ω
For more information, refer to the application note “ST50X and STA51X digital power
amplifiers”.
a. A PWM modulator as driver is required. This result was obtained using the STA30X+STA50X demo board.
10/13
STA516B
6
Mechanical and package data
Mechanical and package data
Figure 8.
Power SO36 (slug up) mechanical data and package dimension
DIM.
A
A2
A4
A5
a1
b
c
D
D1
D2
E
E1
E2
E3
E4
e
e3
G
H
h
L
N
s
MIN.
3.25
3.1
0.8
mm
TYP.
MAX.
3.43
3.2
1
MIN.
0.128
0.122
0.031
-0.040
0.38
0.32
16
9.8
0.0011
0.008
0.009
0.622
0.37
14.5
11.1
2.9
6.2
3.2
0.547
0.429
0.2
0.030
0.22
0.23
15.8
9.4
5.8
2.9
0.8
OUTLINE AND
MECHANICAL DATA
-0.0015
0.015
0.012
0.630
0.38
0.039
0.57
0.437
0.114
0.244
1.259
0.228
0.114
0.65
11.05
0
15.5
MAX.
0.135
0.126
0.039
0.008
1
13.9
10.9
inch
TYP.
0.026
0.435
0.075
15.9
1.1
1.1
10˚
8˚
0
0.61
0.031
0.003
0.625
0.043
0.043
10˚
8˚
PowerSO36 (SLUG UP)
(1) “D and E1” do not include mold flash or protusions.
Mold flash or protusions shall not exceed 0.15mm (0.006”)
(2) No intrusion allowed inwards the leads.
7183931 D
11/13
Revision history
7
STA516B
Revision history
Table 9.
Date
12/13
Document revision history
Revision
Changes
01-Feb-2007
1
Initial release
19-Mar-2007
2
Update to reflect product maturity.
STA516B
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13/13