STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET Features Type VDSS RDS(on) RDS(on)*Qg ID STB11NM80 800 V < 0.40 Ω 14Ω*nC 11 A STF11NM80 800 V < 0.40 Ω 14Ω*nC 11 A STP11NM80 800 V < 0.40 Ω 14Ω*nC 11 A STW11NM80 800 V < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on) *Qg in the industry 3 1 D²PAK TO-247 3 1 TO-220 3 2 1 2 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 D²PAK Tape & reel STF11NM80 F11NM80 TO-220FP Tube STP11NM80 P11NM80 TO-220 Tube STW11NM80 W11NM80 TO-247 Tube December 2007 Rev 9 1/17 www.st.com 17 Contents STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 9 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/D²PAK/ TO-247 Unit TO-220FP VDS Drain-source voltage (VGS = 0) 800 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25°C 11 11 (1) A ID Drain current (continuous) at TC=100°C 8 8 (1) A IDM(2) Drain current (pulsed) 44 44 (1) A PTOT Total dissipation at TC = 25°C 150 35 W Derating factor 1.2 0.28 W/°C -- 2500 V VISO TJ Tstg Insulation withstand voltage (DC) Operating junction temperature Storage temperature -65 to 150 °C 1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter TO-220/D²PAK/ TO-247 Rthj-case Thermal resistance junction-case max 0.83 Unit TO-220FP 3.6 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50 V) 400 mJ 3/17 Electrical characteristics 2 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Typ. Max. 800 Unit V VDS = Max rating, VDS = Max rating @125°C 10 100 µA µA Gate body leakage current (VDS = 0) VGS = ±30 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5.5 A 0.35 0.40 Ω Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 6. Symbol gfs (1) Ciss Coss Crss Qg Parameter VDS > ID(on) x RDS(on)max, ID= 7.5A Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Rg Gate input resistance tr td(off) tf Test conditions Forward transconductance Qgd td(on) 3 Dynamic Total gate charge Gate-source charge Gate-drain charge Qgs Turn-on delay time Rise time Turn-off delay time Fall time VDD=640 V, ID = 11 A VGS =10 V (see Figure 10) f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain VDD=400 V, ID= 5.5 A, RG=4.7 Ω, VGS=10 V (see Figure 17) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/17 Min. Min. 8 S 1630 750 30 pF pF pF 43.6 11.6 21 nC nC nC 2.7 Ω 22 17 46 15 ns ns ns ns STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Table 7. Symbol Electrical characteristics Source drain diode Max Unit Source-drain current 11 A ISDM(1) Source-drain current (pulsed) 44 A VSD(2) Forward on voltage ISD=11 A, VGS=0 0.86 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, ISD trr Qrr IRRM trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions di/dt = 100 A/µs, VDD=50 V, Tj=25 °C ISD=11 A, di/dt = 100 A/µs, VDD=50 V, Tj=150 °C Min Typ. 612 7.22 23.6 ns µC A 970 11.25 23.2 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/17 Electrical characteristics STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / TO-247 Figure 3. Thermal impedance for TO-220 / D²PAK / TO-247 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Output characteristics 6/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Figure 8. Transfer characteristics Figure 9. Electrical characteristics Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Static drain-source on resistance 7/17 Electrical characteristics STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Figure 14. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature 8/17 Figure 15. Normalized on resistance vs temperature STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 3 Test circuit Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/17 Package mechanical data 4 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/17 Package mechanical data STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 12/17 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 13/17 Package mechanical data STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 14/17 L5 1 2 3 L4 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 15/17 Revision history 6 STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Revision history Table 8. 16/17 Revision history Date Revision Changes 30-Sep-2004 4 Preliminary version 26-Nov-2005 5 Complete version 07-Apr-2006 6 Modified value on Figure 8 15-May-2006 7 New dv/dt value on Table 5 20-Jul-2006 8 The document has been reformatted 20-Dec-2007 9 Updated ID value on Table 2: Absolute maximum ratings STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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