STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET General features Type VDSS (@TJ=TJmax) RDS(on) ID 3 STP11NM60 650V <0.45Ω 11A STP11NM60FP 650V <0.45Ω 11A STB11NM60 650V <0.45Ω 11A STB11NM60-1 650V <0.45Ω 11A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 1 3 2 1 TO-220 2 TO-220FP 3 3 12 1 D2PAK i2PAK Internal schematic diagram Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Applications ■ Switching application Order codes Part number Marking Package Packaging STB11NM60T4 B11NM60 D²PAK Tape & reel STB11NM60-1 B11NM60-1 I²PAK Tube STP11NM60 P11NM60 TO-220 Tube STP11NM60FP P11NM60FP TO-220FP Tube January 2007 Rev 6 1/16 www.st.com 16 Contents STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ................................................ 9 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/D²PAK/I²PAK TO-220FP VGS Gate- source voltage ±30 V (1) ID Drain current (continuous) at TC = 25°C 11 11 A ID Drain current (continuous) at TC=100°C 7 7(1) A A IDM(2) Drain current (pulsed) 44 44(1) PTOT Total dissipation at TC = 25°C 160 35 W Derating Factor 1.28 0.28 W/°C dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (DC) TJ Tstg 15 V/ns -- Operating junction temperature 2500 V -65 to 150 °C 150 °C Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 11A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 2. Thermal data Value Symbol Rthj-case Parameter Unit TO-220/D²PAK/I²PAK TO-220FP 0.78 3.57 Thermal resistance junction-case Max °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 5.5 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 350 mJ 3/16 Electrical characteristics 2 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±30V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 5.5A Symbol Typ. Max. Unit 600 V VDS = 600 V IDSS Table 5. Min. 1 10 µA µA ±100 nA 4 5 V 0.4 0.45 Ω Typ. Max. Unit VDS = 600 V, Tc=125°C 3 Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID = 5.5A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance (2) Min. 5.2 S VDS =25V, f=1 MHz, VGS=0 1000 230 25 pF pF pF Equivalent output capacitance VGS=0, VDS =0V to 480V 100 pF RG Gate input resistance f=1 MHz gate DC bias = 0 Test signal level = 20mV open drain 1.6 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=480V, ID = 11A VGS =10V (see Figure 15) 30 10 15 nC nC nC Coss eq 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Table 6. Symbol td(on) tr tr(Voff) tf tc Table 7. Symbol Electrical characteristics Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions Min. VDD=300 V, ID=5.5A, RG=4.7Ω, VGS=10V (see Figure 17) VDD=480V, ID=11A, RG=4.7Ω, VGS=10V (see Figure 17) Typ. Max. Unit 20 20 ns ns 6 11 19 ns ns ns Source drain diode Max Unit Source-drain current 11 A ISDM(1) Source-drain current (pulsed) 44 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD=11A, VGS=0 ISD=11A, di/dt = 100A/µs, VDD=100V, Tj=25°C (see Figure 16) ISD=11A, di/dt = 100A/µs, VDD=100V, Tj=150°C (see Figure 16) 390 3.8 19.5 ns µC A 570 5.7 20 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Electrical characteristics STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/D2PAK/I2PAK Figure 2. Thermal impedance TO-220 / D2PAK/I2PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Electrical characteristics Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/16 Package mechanical data 4 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/16 Package mechanical data STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/16 L5 1 2 3 L4 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 13/16 Packaging mechanical data 5 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 6 Revision history Revision history Table 8. Revision history Date Revision Changes 09-Sep-2004 1 First Release 10-Jun-2005 2 Typing error, wrong description 26-Jul-2006 3 The document has been reformatted, no content change 31-Aug-2006 4 Typo mistake on order code 21-Dec-2006 5 Various changes on “Test conditions” for Table 5. and Table 6. 12-Jan-2007 6 Order code has been corrected 15/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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