STMICROELECTRONICS STW16NM50N

STB16NM50N - STF/I16NM50N
STP16NM50N - STW16NM50N
N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET
D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
Features
VDSS
(@Tjmax)
Type
RDS(on)
max
ID
3
3
12
1
STB16NM50N
550 V
0.26 Ω
15 A
STI16NM50N
550 V
0.26 Ω
15 A
STF16NM50N
550 V
0.26 Ω
15 A (1)
D²PAK
I²PAK
2
3
1
STP16NM50N
550 V
0.26 Ω
15 A
STW16NM50N
550 V
0.26 Ω
15 A
TO-247
3
1. Limited only by maximum temperature allowed
1
TO-220
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Figure 1.
3
2
1
2
TO-220FP
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB16NM50N
B16NM50N
D²PAK
Tape and reel
STI16NM50N
I16NM50N
I²PAK
Tube
STF16NM50N
F16NM50N
TO-220FP
Tube
STP16NM50N
P16NM50N
TO-220
Tube
STW16NM50N
W16NM50N
TO-247
Tube
March 2008
Rev 2
1/18
www.st.com
18
Contents
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
................................................ 9
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
D²PAK/I²PAK
TO-220FP
TO-220/TO-247
Unit
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
15
15 (1)
A
ID
Drain current (continuous) at TC = 100°C
9.4
9.4 (1)
A
IDM (2)
Drain current (pulsed)
60
60 (1)
A
PTOT
Total dissipation at TC = 25°C
125
30
W
dv/dt (3)
Peak diode recovery voltage slope
15
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Tstg
Storage temperature
Tj
--
V/ns
2500
V
-55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤15A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220 I²PAK D²PAK TO-247 TO-220FP
Rthj-case
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junctionamb max
Rthj-pcb
Thermal resistance junctionpcb max
Tl
Table 4.
Symbol
1
62.5
--
--
Maximum lead temperature for
soldering purposes
4.2
°C/W
--
50
62.5
°C/W
30
--
--
°C/W
300
°C
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
Unit
6
A
470
mJ
3/18
Electrical characteristics
2
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
dv/dt(1)
1.
Parameter
Drain-source breakdown
voltage
Drain-source voltage slope
Test conditions
ID = 1 mA, VGS= 0
Min.
Typ.
Max.
500
VDD = 400 V,ID = 15 A,
V
30
VGS = 10 V
Unit
VDS = Max rating,
V/ns
VDS = Max rating@125 °C
1
100
µA
µA
Gate body leakage current
(VDS = 0)
VGS = ±20 V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 7.5 A
0.21
0.26
Ω
Typ.
Max.
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
2
Characteristics value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
gfs(1)
Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VDS =15 V, ID= 7.5 A
VDS = 50 V, f =1 MHz,
VGS = 0
Min.
10
S
1200
80
10
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
170
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
5
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
38
7
19
nC
nC
nC
Coss eq.(2)
1.
On/off states
VDD = 400 V, ID = 15 A
VGS = 10 V
(see Figure 19)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Symbol
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
trr
Qrr
IRRM
1.
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ
Max
20
15
60
16
VDD = 250 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Unit
ns
ns
ns
ns
Source drain diode
Parameter
Test conditions
Min.
Typ
Source-drain current
Source-drain current (pulsed)
Max
Unit
15
60
A
A
1.3
V
Forward on voltage
ISD = 15 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =15 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 23)
400
5
24
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 15 A
Tj = 150 °C (see Figure 23)
500
6
24
ns
µC
A
Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/18
Electrical characteristics
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3.
Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
6/18
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Figure 8.
Output characteristics
Figure 10. Transconductance
Figure 9.
Electrical characteristics
Transfer characteristics
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
7/18
Electrical characteristics
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
8/18
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
3
Test circuit
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/18
Package mechanical data
4
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/18
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/18
Package mechanical data
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
TO-220FP mechanical data
mm.
DIM.
Min.
A
4.4
inch
Typ.
Max.
Min.
Typ.
4.6
0.173
0.181
Max.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
12/18
L5
1 23
L4
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Package mechanical data
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
Typ
Max.
5.15
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
øP
3.55
3.65
øR
4.50
5.50
S
5.50
13/18
Package mechanical data
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
I²PAK (TO-262) mechanical data
mm
inch
Dim
Min
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
14/18
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
Typ
Max
Min
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Typ
Max
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Package mechanical data
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
Typ
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
0079457_M
15/18
Packaging mechanical data
5
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/18
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
6
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
12-Oct-2007
1
First release
04-Mar-2008
2
Table 3: Thermal data has been updated.
17/18
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
18/18