STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh™ Power MOSFET General features Type VDSS RDS(on) ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W ■ Very high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Low intrinsic capacitances ■ Fast internal recovery diode 3 3 1 2 1 2 TO-220FP TO-220 3 1 D²PAK Description Internal schematic diagram The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. Applications ■ Switching application Order codes Part number Marking Package Packaging STB9NK60ZD B9NK60ZD D²PAK Tape & reel STF9NK60ZD F9NK60ZD TO-220FP Tube STP9NK60ZD P9NK60ZD TO-220 Tube June 2006 Rev 7 1/16 www.st.com 16 Contents STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit D²PAK/TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ± 30 V Drain current (continuos) at TC = 25°C ID ID IDM Drain current (continuos) at TC = 100°C (2) PTOT 4.3 4.3 A 28 (1) A 28 Total dissipation at TC = 25°C 125 30 W 1 0.24 W/°C VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ) dv/dt A (1) Drain current (pulsed) Derating factor (3) 7 (1) 7 Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Tj Tstg Operating junction temperature Storage temperature 4000 V 15 V/ns -- 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 7A, di/dt < 500A/µs, VDD =80%V(BR)DSS Table 2. Thermal data TO-220/D²PAK TO-220FP Thermal resistance junction-pcb Max (when mounted on minimum footprint) 30 -- °C/W Rthj-case Thermal resistance junction-case Max 1 4.16 °C/W Rthj-pcb Rthj-amb Thermal resistance junction-ambient Max Tl Table 3. Symbol Maximum lead temperature for soldering purpose 62.5 °C/W 300 °C Max value Unit 7 A 235 mJ Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 3/16 Electrical characteristics 2 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC = 125°C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.5 4.5 V 0.85 0.95 Ω Typ. Max. Unit VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 100µA RDS(on) Static drain-source on resistance Table 5. Symbol VGS = 10V, ID = 3.5A Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge COSS eq(2) Qg Qgs Qgd 2.5 VDS = 15V, ID = 3.5A Min. 5.3 S 1110 135 30 pF pF pF VGS = 0V, VDS = 0V to 480V 72 pF VDD = 480V, ID = 7A, VGS = 10V (see Figure 16) 41 8.7 21 53 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Table 6. Switching times Symbol Parameter Electrical characteristics Test Conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300V, ID = 3.5A RG = 4.7Ω, VGS = 10V (see Figure 15) 11.4 13.6 23.1 15 ns ns ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 7A, RG = 4.7Ω, VGS = 10V (see Figure 15) 11 8 20 ns ns ns Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward On Voltage ISD = 7A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7A, di/dt = 100A/µs VDD = 30V, Tj = 25°C (see Figure 20) 130 663 8.3 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see Figure 20) 113 935 10 ns nC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 7 28 A A 1.6 V 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1mA (open drain) Min Typ Max Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 5/16 Electrical characteristics STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 / D²PAK Figure 2. Thermal impedance for TO-220 / D²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Electrical characteristics Figure 7. Normalized BVDSS vs temperature Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 14. Maximum avalanche energy vs temperature STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Package mechanical data 4 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/16 Package mechanical data STB9NK60ZD - STF9NK60ZD - STP9NK60ZD TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/16 L5 1 2 3 L4 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 13/16 Package mechanical data 5 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 6 Revision history Revision history Table 9. Date Revision Changes 29-Sep-2003 6 Data updated 09-Jun-2006 7 New template 15/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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