STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS(on) ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP 400V <0.55Ω 10A 2 1 30W TO-220FP TO-220 ■ Extremely high dv/dt capability ■ 100% avalanche tested 2 3 1 ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability D2PAK Description Internal schematic diagram The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications ■ Switching application Order codes Part number Marking Package Packaging STB11NK40ZT4 B11NK40Z D²PAK Tape & reel STP11NK40Z P11NK40Z TO-220 Tube STP11NK40ZFP P11NK40ZFP TO-220FP Tube January 2007 Rev 6 1/16 www.st.com 16 Contents STB11NK40Z - STP11NK40ZFP - STP11NK40Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ................................................ 9 STB11NK40Z - STP11NK40ZFP - STP11NK40Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/D²PAK VDS VDGR VGS ID ID TO-220FP Drain-source voltage (VGS = 0) 400 V Drain-gate voltage (RGS = 20KΩ) 400 V Gate-source voltage ± 30 Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C V 9 9(1) A 5.67 5.67(1) A A IDM(2) Drain current (pulsed) 36 36(1) PTOT Total dissipation at TC = 25°C 110 30 W Derating Factor 0.88 0.24 W/°C VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5kΩ) 3500 V dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (DC) TJ Tstg Operating junction temperature Storage temperature -- 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤9A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Thermal data Value Symbol Rthj-case Parameter Thermal resistance junction-case max Unit TO-220/D²PAK TO-220FP 1.14 4.2 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit 9 A 190 mJ Table 3. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 3/16 Electrical characteristics 2 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min. Typ. Max. Unit 400 V VDS = Max rating, VDS = Max rating @125°C 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ± 20V, VDS = 0 ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 4.5A 0.49 0.55 Ω Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Qg Qgd Test conditions Min. Forward transconductance VDS =15V, ID = 4.5A 5.8 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 930 140 30 pF pF pF VGS=0, VDS =0V to 320V 78 pF 32 6 18.5 nC nC nC Coss eq(2). Equivalent output capacitance Qgs 3 Total gate charge Gate-source charge Gate-drain charge VDD=320V, ID = 9A VGS =10V (see Figure 17) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Table 7. Symbol Electrical characteristics Switching times Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test conditions Min. VDD=200 V, ID=4.5A, RG=4.7Ω, VGS=10V (see Figure 19) VDD=200V, ID=4.5A, RG=4.7Ω, VGS=10V (see Figure 19) VDD=320V, ID=9A, RG=4.7Ω, VGS=10V (see Figure 19) Typ. Max. Unit 20 20 ns ns 40 18 ns ns 15 17 30 ns ns ns Source drain diode Max Unit Source-drain current 9 A ISDM(1) Source-drain current (pulsed) 36 A VSD(2) Forward on voltage ISD=9A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9A, ISD trr Qrr IRRM Parameter Test conditions Min Typ. 225 1.6 14 di/dt = 100A/µs, VDD=45V, Tj=150°C ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 8. Gate-source zener diode Symbol Parameter BVGSO(1) Gate-source breakdown voltage Test conditions Igs=±1mA (open drain) Min. Typ. Max. Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STB11NK40Z - STP11NK40ZFP - STP11NK40Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 D²PAK Figure 2. Thermal impedance for TO-220 D²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics Figure 15. Maximum avalanche energy vs temperature 8/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Figure 14. Normalized BVDSS vs temperature STB11NK40Z - STP11NK40ZFP - STP11NK40Z 3 Test circuit Test circuit Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16 Package mechanical data 4 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/16 Package mechanical data STB11NK40Z - STP11NK40ZFP - STP11NK40Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/16 L5 1 2 3 L4 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 13/16 Packaging mechanical data 5 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB11NK40Z - STP11NK40ZFP - STP11NK40Z 6 Revision history Revision history Table 9. Revision history Date Revision Changes 23-Aug-2005 2 Preliminary version 28-Oct-2005 3 Complete version 26-Jul-2006 4 New template, no content change 22-Nov-2006 5 Corrected unit on Table 4.: On/off states 18-Jan-2007 6 Typo mistakes on page 1 15/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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