TDS.51.. TELEFUNKEN Semiconductors 13 mm Seven Segment Display Color Red Orange g red Yellow Green Type TDSR515. TDSR516. TDSO515. TDSO516. TDSY515. TDSY516. TDSG515. TDSG516. Circuitry Common anode Common cathode Common anode Common cathode Common anode Common cathode Common anode Common cathode Description The TDS.51.. series are 13 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 7 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast. All displays are categorized in luminous intensity groups. That allows users to assemble displays with uniform appearence. Typical applications include instruments, panel meters, point-of-sale terminals and household equipment. Features D D D D D D D 96 11508 Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Yellow and green categorized for color Wide viewing angle Suitable for DC and high peak current Applications Panel meters Test- and measure- equipment Point-of-sale terminals Control units TV sets Rev. A1: 01.06.1995 1 (9) TDS.51.. TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified TDSR515. /TDSR516. , TDSO515. /TDSO516. , TDSY515. /TDSY516. , TDSG515. /TDSG516. Parameter Reverse voltage per segment or DP DC forward current per segment or DP Test Conditions Surge g forward current per segment or DP tp ≤ 10 ms (non repetitive) Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Tamb ≤ 45°C Type TDSR315./316. TDSO315./316. TDSY315./316. TDSG315./316. TDSR315./316. TDSO315./316. TDSY315./316. TDSG315./316. t ≤ 3 sec, 2mm below seating plane Symbol VR IF IF IF IF IFSM IFSM IFSM IFSM PV Tj Tamb Tstg Tsd Value 6 35 25 25 25 0.5 0.15 0.15 0.15 550 100 –40 to + 85 –40 to + 85 260 Unit V mA mA mA mA A A A A mW °C °C °C °C RthJA 100 K/W Thermal resistance LED junction/ ambient Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Red (TDSR515. , TDSR516. ) Parameter Test Conditions IF = 10 mA Type Luminous intensity per segment TDSR5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g 2 (9) Symbol Min IV 280 ld lp ϕ VF VR 6 Typ Max Unit mcd 655 660 ±50 1.6 15 2 nm nm deg V V Rev. A1: 01.06.1995 TDS.51.. TELEFUNKEN Semiconductors Orange red (TDSO515. , TDSO516. ) Parameter Test Conditions IF = 10 mA Type Luminous intensity per segment TDSO5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g Symbol Min Typ IV 700 ld lp ϕ VF VR 612 6 630 ±50 2 15 Symbol Min Typ IV 700 ld lp ϕ VF VR 581 6 585 ±50 2.4 15 Symbol Min Typ IV 700 ld lp ϕ VF VR 562 Max Unit mcd 625 3 nm nm deg V V Yellow (TDSY515. , TDSY516. ) Parameter Test Conditions IF = 10 mA Type Luminous intensity per segment TDSY5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g Max Unit mcd 594 3 nm nm deg V V Green (TDSG515. , TDSG516. ) Parameter Test Conditions IF = 10 mA Type Luminous intensity per segment TDSG5150/5160 (digit average) 1) Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage per segment or DP IF = 20 mA Reverse voltage per segment or DP IR = 10 mA 1) I Vmin and IV groups are mean values of segments a to g Rev. A1: 01.06.1995 6 Max Unit mcd 575 565 ±50 2.4 15 3 nm nm deg V V 3 (9) TDS.51.. TELEFUNKEN Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1000 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 1000 800 600 400 200 0 100 10 1 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 95 11481 1 1.5 2 3 2.5 VF – Forward Voltage ( V ) 95 10073 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage 1.6 Iv rel – Relative Luminous Intensity 60 50 40 Red 30 20 10 Red 1.2 0.8 0.4 IF=10mA 0 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 95 11482 10 ° 20 ° 40° 0.9 50° 0.8 60° 70° 0.7 80° 40 60 80 100 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature 2.4 30° 1.0 20 Tamb – Ambient Temperature ( °C ) 95 10074 Figure 2. Forward Current vs. Ambient Temperature 0° 0 Iv rel – Relative Luminous Intensity 0 Iv rel – Relative Luminous Intensity tp/T=0.001 tp=10ms 0.1 0 IF – Forward Current ( mA ) Red Red 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10082 Figure 3. Rel. Luminous Intensity vs. Angular Displacement 4 (9) 95 10075 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Rev. A1: 01.06.1995 TDS.51.. TELEFUNKEN Semiconductors 1.6 Iv rel – Relative Luminous Intensity Iv rel – Relative Luminous Intensity 10 Red 1 0.1 Orange-Red 1.2 0.8 0.4 0.01 1 100 10 IF – Forward Current ( mA ) 95 10076 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 95 10087 Figure 7. Relative Luminous Intensity vs. Forward Current Figure 10. Rel. Luminous Intensity vs. Ambient Temperature 2.4 Iv rel – Relative Luminous Intensity 1.2 Iv rel – Relative Luminous Intensity IF=10mA 0 Red 1.0 0.8 0.6 0.4 0.2 Orange-Red 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 620 0 640 660 680 700 720 l – Wavelength ( nm ) 95 10077 95 10088 Figure 8. Relative Luminous Intensity vs. Wavelength 50 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T 10 Iv rel – Relative Luminous Intensity Orange-Red IF – Forward Current ( mA ) 20 1 Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 1000 100 10 1 tp/T=0.001 tp=10ms 0.1 0 95 10086 10 2 4 6 8 1 0.1 0.01 10 VF – Forward Voltage ( V ) Figure 9. Forward Current vs. Forward Voltage Rev. A1: 01.06.1995 Orange-Red 1 95 10089 10 100 IF – Forward Current ( mA ) Figure 12. Relative Luminous Intensity vs. Forward Current 5 (9) TDS.51.. TELEFUNKEN Semiconductors 2.4 Iv rel – Relative Luminous Intensity Iv rel – Relative Luminous Intensity 1.2 Orange-Red 1.0 0.8 0.6 0.4 0.2 0 590 Yellow 2.0 1.6 1.2 0.8 0.4 0 610 630 650 670 690 l – Wavelength ( nm ) 95 10090 95 10260 Figure 13. Relative Luminous Intensity vs. Wavelength Iv rel – Relative Luminous Intensity IF – Forward Current ( mA ) Yellow 100 tp/T=0.001 tp=10ms 10 1 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Yellow 1 0.1 0.01 0 2 4 6 8 10 VF – Forward Voltage ( V ) 95 10030 1 100 10 IF – Forward Current ( mA ) 95 10033 Figure 14. Forward Current vs. Forward Voltage Figure 17. Relative Luminous Intensity vs. Forward Current 1.6 1.2 Yellow Iv rel – Relative Luminous Intensity Iv rel – Relative Luminous Intensity 50 0.5 10 0.1 1.2 0.8 0.4 Yellow 1.0 0.8 0.6 0.4 0.2 IF=10mA 0 0 20 40 60 80 0 550 100 Tamb – Ambient Temperature ( °C ) Figure 15. Rel. Luminous Intensity vs. Ambient Temperature 6 (9) 20 1 Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 1000 95 10031 10 95 10039 570 590 610 630 650 l – Wavelength ( nm ) Figure 18. Relative Luminous Intensity vs. Wavelength Rev. A1: 01.06.1995 TDS.51.. TELEFUNKEN Semiconductors 10 Iv rel – Relative Luminous Intensity IF – Forward Current ( mA ) 1000 Green 100 10 tp/T=0.001 tp=10ms 1 0.1 1 0.1 0.01 0 2 4 6 8 10 VF – Forward Voltage ( V ) 95 10034 1 100 10 IF – Forward Current ( mA ) 95 10037 Figure 19. Forward Current vs. Forward Voltage Figure 22. Relative Luminous Intensity vs. Forward Current 1.2 1.6 Green Iv rel – Relative Luminous Intensity Iv rel – Relative Luminous Intensity Green 1.2 0.8 0.4 Green 1.0 0.8 0.6 0.4 0.2 IF=10mA 0 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) 95 10035 0 520 100 95 10038 Figure 20. Rel. Luminous Intensity vs. Ambient Temperature 540 560 580 600 620 l – Wavelength ( nm ) Figure 23. Relative Luminous Intensity vs. Wavelength Iv rel – Relative Luminous Intensity 2.4 Green 2.0 1.6 1.2 0.8 0.4 0 95 10263 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 21. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Rev. A1: 01.06.1995 7 (9) TDS.51.. TELEFUNKEN Semiconductors Dimensions in mm 95 11344 Pin connections 10 9 8 7 6 a b f g c e DP d 1 8 (9) 2 3 4 5 1 2 3 4 5 6 7 8 9 10 e d A (K) c DP b a A (K) f g 95 10896 Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TDS.51.. Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1: 01.06.1995 9 (9)