TEMIC TDSR515

TDS.51..
TELEFUNKEN Semiconductors
13 mm Seven Segment Display
Color
Red
Orange
g red
Yellow
Green
Type
TDSR515.
TDSR516.
TDSO515.
TDSO516.
TDSY515.
TDSY516.
TDSG515.
TDSG516.
Circuitry
Common anode
Common cathode
Common anode
Common cathode
Common anode
Common cathode
Common anode
Common cathode
Description
The TDS.51.. series are 13 mm character seven segment
LED displays in a very compact package.
The displays are designed for a viewing distance up to 7
meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments
provide an optimum on-off contrast.
All displays are categorized in luminous intensity groups.
That allows users to assemble displays with uniform appearence.
Typical applications include instruments, panel meters,
point-of-sale terminals and household equipment.
Features
D
D
D
D
D
D
D
96 11508
Evenly lighted segments
Grey package surface
Untinted segments
Luminous intensity categorized
Yellow and green categorized for color
Wide viewing angle
Suitable for DC and high peak current
Applications
Panel meters
Test- and measure- equipment
Point-of-sale terminals
Control units
TV sets
Rev. A1: 01.06.1995
1 (9)
TDS.51..
TELEFUNKEN Semiconductors
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
TDSR515. /TDSR516. , TDSO515. /TDSO516. , TDSY515. /TDSY516. , TDSG515. /TDSG516.
Parameter
Reverse voltage per segment or DP
DC forward current
per segment or DP
Test Conditions
Surge
g forward current
per segment or DP
tp ≤ 10 ms
(non repetitive)
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb ≤ 45°C
Type
TDSR315./316.
TDSO315./316.
TDSY315./316.
TDSG315./316.
TDSR315./316.
TDSO315./316.
TDSY315./316.
TDSG315./316.
t ≤ 3 sec, 2mm below seating plane
Symbol
VR
IF
IF
IF
IF
IFSM
IFSM
IFSM
IFSM
PV
Tj
Tamb
Tstg
Tsd
Value
6
35
25
25
25
0.5
0.15
0.15
0.15
550
100
–40 to + 85
–40 to + 85
260
Unit
V
mA
mA
mA
mA
A
A
A
A
mW
°C
°C
°C
°C
RthJA
100
K/W
Thermal resistance LED junction/
ambient
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Red (TDSR515. , TDSR516. )
Parameter
Test Conditions
IF = 10 mA
Type
Luminous intensity per segment
TDSR5150/5160
(digit average) 1)
Dominant wavelength
IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity
IF = 10 mA
Forward voltage per segment or DP IF = 20 mA
Reverse voltage per segment or DP IR = 10 mA
1) I
Vmin and IV groups are mean values of segments a to g
2 (9)
Symbol
Min
IV
280
ld
lp
ϕ
VF
VR
6
Typ
Max
Unit
mcd
655
660
±50
1.6
15
2
nm
nm
deg
V
V
Rev. A1: 01.06.1995
TDS.51..
TELEFUNKEN Semiconductors
Orange red (TDSO515. , TDSO516. )
Parameter
Test Conditions
IF = 10 mA
Type
Luminous intensity per segment
TDSO5150/5160
(digit average) 1)
Dominant wavelength
IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity
IF = 10 mA
Forward voltage per segment or DP IF = 20 mA
Reverse voltage per segment or DP IR = 10 mA
1) I
Vmin and IV groups are mean values of segments a to g
Symbol
Min
Typ
IV
700
ld
lp
ϕ
VF
VR
612
6
630
±50
2
15
Symbol
Min
Typ
IV
700
ld
lp
ϕ
VF
VR
581
6
585
±50
2.4
15
Symbol
Min
Typ
IV
700
ld
lp
ϕ
VF
VR
562
Max
Unit
mcd
625
3
nm
nm
deg
V
V
Yellow (TDSY515. , TDSY516. )
Parameter
Test Conditions
IF = 10 mA
Type
Luminous intensity per segment
TDSY5150/5160
(digit average) 1)
Dominant wavelength
IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity
IF = 10 mA
Forward voltage per segment or DP IF = 20 mA
Reverse voltage per segment or DP IR = 10 mA
1) I
Vmin and IV groups are mean values of segments a to g
Max
Unit
mcd
594
3
nm
nm
deg
V
V
Green (TDSG515. , TDSG516. )
Parameter
Test Conditions
IF = 10 mA
Type
Luminous intensity per segment
TDSG5150/5160
(digit average) 1)
Dominant wavelength
IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity
IF = 10 mA
Forward voltage per segment or DP IF = 20 mA
Reverse voltage per segment or DP IR = 10 mA
1) I
Vmin and IV groups are mean values of segments a to g
Rev. A1: 01.06.1995
6
Max
Unit
mcd
575
565
±50
2.4
15
3
nm
nm
deg
V
V
3 (9)
TDS.51..
TELEFUNKEN Semiconductors
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
1000
IF – Forward Current ( mA )
PV – Power Dissipation ( mW )
1000
800
600
400
200
0
100
10
1
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 11481
1
1.5
2
3
2.5
VF – Forward Voltage ( V )
95 10073
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
1.6
Iv rel – Relative Luminous Intensity
60
50
40
Red
30
20
10
Red
1.2
0.8
0.4
IF=10mA
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 11482
10
°
20
°
40°
0.9
50°
0.8
60°
70°
0.7
80°
40
60
80
100
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
2.4
30°
1.0
20
Tamb – Ambient Temperature ( °C )
95 10074
Figure 2. Forward Current vs. Ambient Temperature
0°
0
Iv rel – Relative Luminous Intensity
0
Iv rel – Relative Luminous Intensity
tp/T=0.001
tp=10ms
0.1
0
IF – Forward Current ( mA )
Red
Red
2.0
1.6
1.2
0.8
0.4
IFAV=10mA, const.
0
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10082
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
4 (9)
95 10075
10
20
50
1
0.5
0.2
100
0.1
200
500
IF(mA)
0.05
0.02
tp/T
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Rev. A1: 01.06.1995
TDS.51..
TELEFUNKEN Semiconductors
1.6
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
10
Red
1
0.1
Orange-Red
1.2
0.8
0.4
0.01
1
100
10
IF – Forward Current ( mA )
95 10076
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
95 10087
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
2.4
Iv rel – Relative Luminous Intensity
1.2
Iv rel – Relative Luminous Intensity
IF=10mA
0
Red
1.0
0.8
0.6
0.4
0.2
Orange-Red
2.0
1.6
1.2
0.8
0.4
IFAV=10mA, const.
0
620
0
640
660
680
700
720
l – Wavelength ( nm )
95 10077
95 10088
Figure 8. Relative Luminous Intensity vs. Wavelength
50
0.5
0.2
100
0.1
200
500
IF(mA)
0.05
0.02
tp/T
10
Iv rel – Relative Luminous Intensity
Orange-Red
IF – Forward Current ( mA )
20
1
Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
1000
100
10
1
tp/T=0.001
tp=10ms
0.1
0
95 10086
10
2
4
6
8
1
0.1
0.01
10
VF – Forward Voltage ( V )
Figure 9. Forward Current vs. Forward Voltage
Rev. A1: 01.06.1995
Orange-Red
1
95 10089
10
100
IF – Forward Current ( mA )
Figure 12. Relative Luminous Intensity vs. Forward Current
5 (9)
TDS.51..
TELEFUNKEN Semiconductors
2.4
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
1.2
Orange-Red
1.0
0.8
0.6
0.4
0.2
0
590
Yellow
2.0
1.6
1.2
0.8
0.4
0
610
630
650
670
690
l – Wavelength ( nm )
95 10090
95 10260
Figure 13. Relative Luminous Intensity vs. Wavelength
Iv rel – Relative Luminous Intensity
IF – Forward Current ( mA )
Yellow
100
tp/T=0.001
tp=10ms
10
1
0.2
100
0.1
200
500
IF(mA)
0.05
0.02
tp/T
Yellow
1
0.1
0.01
0
2
4
6
8
10
VF – Forward Voltage ( V )
95 10030
1
100
10
IF – Forward Current ( mA )
95 10033
Figure 14. Forward Current vs. Forward Voltage
Figure 17. Relative Luminous Intensity vs. Forward Current
1.6
1.2
Yellow
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
50
0.5
10
0.1
1.2
0.8
0.4
Yellow
1.0
0.8
0.6
0.4
0.2
IF=10mA
0
0
20
40
60
80
0
550
100
Tamb – Ambient Temperature ( °C )
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
6 (9)
20
1
Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
1000
95 10031
10
95 10039
570
590
610
630
650
l – Wavelength ( nm )
Figure 18. Relative Luminous Intensity vs. Wavelength
Rev. A1: 01.06.1995
TDS.51..
TELEFUNKEN Semiconductors
10
Iv rel – Relative Luminous Intensity
IF – Forward Current ( mA )
1000
Green
100
10
tp/T=0.001
tp=10ms
1
0.1
1
0.1
0.01
0
2
4
6
8
10
VF – Forward Voltage ( V )
95 10034
1
100
10
IF – Forward Current ( mA )
95 10037
Figure 19. Forward Current vs. Forward Voltage
Figure 22. Relative Luminous Intensity vs. Forward Current
1.2
1.6
Green
Iv rel – Relative Luminous Intensity
Iv rel – Relative Luminous Intensity
Green
1.2
0.8
0.4
Green
1.0
0.8
0.6
0.4
0.2
IF=10mA
0
0
20
40
60
80
Tamb – Ambient Temperature ( °C )
95 10035
0
520
100
95 10038
Figure 20. Rel. Luminous Intensity vs. Ambient Temperature
540
560
580
600
620
l – Wavelength ( nm )
Figure 23. Relative Luminous Intensity vs. Wavelength
Iv rel – Relative Luminous Intensity
2.4
Green
2.0
1.6
1.2
0.8
0.4
0
95 10263
10
20
50
1
0.5
0.2
100
0.1
200
500
IF(mA)
0.05
0.02
tp/T
Figure 21. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Rev. A1: 01.06.1995
7 (9)
TDS.51..
TELEFUNKEN Semiconductors
Dimensions in mm
95 11344
Pin connections
10
9
8
7
6
a
b
f
g
c
e
DP
d
1
8 (9)
2
3
4
5
1
2
3
4
5
6
7
8
9
10
e
d
A (K)
c
DP
b
a
A (K)
f
g
95 10896
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
TDS.51..
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A1: 01.06.1995
9 (9)