VISHAY TDSG1150

TDSG / O / Y11..
VISHAY
Vishay Semiconductors
Standard 7- Segment Display 7 mm
Description
The TDS.11.. series are 7 mm character seven segment LED displays in a very compact package.
The displays are designed for a viewing distance up
to 3 meters and available in four bright colors. The
grey package surface and the evenly lighted untinted
segments provide an optimum on-off contrast.
All displays are categorized in luminous intensity
groups. That allows users to assemble displays with
uniform appearence. Typical applications include
instruments, panel meters, point-of-sale terminals
and household equipment.
e4 Pb
19235
Pb-free
Features
Applications
•
•
•
•
•
•
•
•
Panel meters
Test- and measure- equipment
Point-of-sale terminals
Control units
Evenly lighted segments
Grey package surface
Untinted segments
Luminous intensity categorized
Yellow and green categorized for color
Wide viewing angle
Suitable for DC and high peak current
Lead-free device
Parts Table
Part
Color, Luminous Intensity
Circuitry
TDSO1150
Orange red
Common anode
TDSO1160
Orange red
Common cathode
TDSY1150
Yellow
Common anode
TDSG1150
Green
Common anode
TDSG1160
Green
Common cathode
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TDSO1150/1160 , TDSY1150 , TDSG1150/1160
Parameter
Test condition
Part
Symbol
Value
Unit
VR
6
V
IF
17
mA
TDSO1160
IF
17
mA
TDSY1150
IF
17
mA
TDSG1150
IF
17
mA
TDSG1160
IF
17
mA
Reverse voltage per segment
or DP
DC forward current per segment
or DP
Document Number 83124
Rev. 1.4, 31-Aug-04
TDSO1150
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Vishay Semiconductors
Parameter
Surge forward current per
segment or DP
Power dissipation
Test condition
tp ≤ 10 µs (non repetitive)
Part
Symbol
Value
Unit
TDSO1150
IFSM
0.15
A
TDSO1160
IFSM
0.15
A
TDSY1150
IFSM
0.15
A
TDSG1150
IFSM
0.15
A
TDSG1160
IFSM
0.15
A
PV
400
mW
Tj
100
°C
Tamb
-40 to + 85
°C
Tstg
-40 to + 85
°C
Tsd
260
°C
RthJA
140
K/W
Tamb ≤ 45°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 3 sec, 2mm below seating
plane
Thermal resistance LED
junction/ambient
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Orange red
TDSO1150/1160
Parameter
Test condition
Luminous intensity per segment IF = 10 mA
(digit average)
Symbol
Min
IV
450
612
Typ.
Max
Unit
µcd
1)
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
630
nm
Angle of half intensity
IF = 10 mA
ϕ
±50
deg
Forward voltage per segment
or DP
IF = 20 mA
VF
2
Reverse voltage per segment
or DP
IR = 10 µA
VR
1)
625
6
15
Symbol
Min
Typ.
IV
450
581
3
nm
V
V
IVmin and IV groups are mean
Yellow
TDSY1150
Parameter
Test condition
Luminous intensity per segment IF = 10 mA
Max
Unit
µcd
(digit average) 1)
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
585
594
Angle of half intensity
IF = 10 mA
ϕ
±50
Forward voltage per segment
or DP
IF = 20 mA
VF
2.4
Reverse voltage per segment
or DP
IR = 10 µA
VR
1)
15
deg
3
V
V
IVmin and IV groups are mean
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2
6
nm
nm
Document Number 83124
Rev. 1.4, 31-Aug-04
TDSG / O / Y11..
VISHAY
Vishay Semiconductors
Green
TDSG1150/1160
Parameter
Test condition
Luminous intensity per segment IF = 10 mA
Symbol
Min
IV
450
562
Typ.
Max
Unit
µcd
(digit average) 1)
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
565
Angle of half intensity
IF = 10 mA
ϕ
±50
Forward voltage per segment
or DP
IF = 20 mA
VF
2.4
Reverse voltage per segment
or DP
IR = 10 µA
VR
1)
575
6
nm
nm
deg
3
V
15
V
IVmin and IV groups are mean
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10 °
I V rel - Relative Luminous Intensity
0°
PV - Power Dissipation ( mW )
500
400
300
200
100
20 °
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0
20
40
60
80
Tamb - Ambient Temperature (° C )
95 11479
Red
100
10
1
t p /T = 0.001
t p = 10 µs
95 10086
2
4
6
8
0.2
0.4
0.6
Red
1.2
0.8
0.4
I F = 10 mA
0
Figure 2. Forward Current vs. Forward Voltage
Rev. 1.4, 31-Aug-04
0
1.6
10
V F - Forward Voltage ( V )
Document Number 83124
0.2
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
I v rel - Relative Luminous Intensity
I F - Forward Current ( mA )
1000
0
0.4
95 10082
Figure 1. Power Dissipation vs. Ambient Temperature
0.1
0.6
100
0
95 10087
20
40
60
80
100
T amb - Ambient Temperature ( ° C )
Figure 4. Rel. Luminous Intensity vs. Ambient Temperature
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TDSG / O / Y11..
VISHAY
Vishay Semiconductors
1000
Red
I F - Forward Current ( mA )
I v rel - Relative Luminous Intensity
2.4
2.0
1.6
1.2
0.8
0.4
Yellow
100
t p /T = 0.001
t p = 10 µs
10
1
I FAV = 10 mA, const.
0.1
0
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
95 10088
tp /T
0
8
10
Figure 8. Forward Current vs. Forward Voltage
I v rel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
6
1.6
10
Red
1
0.1
Yellow
1.2
0.8
0.4
I F = 10 mA
0
0.01
1
10
100
I F - Forward Current ( mA )
95 10089
0
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
95 10031
Figure 6. Relative Luminous Intensity vs. Forward Current
Figure 9. Rel. Luminous Intensity vs. Ambient Temperature
2.4
I v rel - Relative Luminous Intensity
1.2
I v rel - Relative Luminous Intensity
4
V F - Forward Voltage ( V )
95 10030
Figure 5. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Red
1.0
0.8
0.6
0.4
0.2
0
590
Yellow
2.0
1.6
1.2
0.8
0.4
0
610
630
650
670
690
λ - Wavelength ( nm )
95 10090
Figure 7. Relative Intensity vs. Wavelength
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4
2
95 10260
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Figure 10. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Document Number 83124
Rev. 1.4, 31-Aug-04
TDSG / O / Y11..
VISHAY
Vishay Semiconductors
I v rel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
10
Yellow
1
0.1
10
1.2
0.8
0.4
I F = 10 mA
100
I F - Forward Current ( mA )
95 10033
0
20
40
60
80
100
T amb - Ambient Temperature ( ° C )
95 10035
Figure 11. Relative Luminous Intensity vs. Forward Current
Figure 14. Rel. Luminous Intensity vs. Ambient Temperature
1.2
2.4
Yellow
I v rel - Specific Luminous Intensity
IVrel - Relative Luminous Intensity
Green
0
0.01
1
1.0
0.8
0.6
0.4
0.2
0
550
Green
2.0
1.6
1.2
0.8
0.4
0
570
590
610
630
650
λ - Wavelength
( nm )
95 10039
10
1
95 10263
Figure 12. Relative Intensity vs. Wavelength
20
0.5
50
0.2
100
0.1
200
0.05
500 IF(mA)
0.02 tp/T
Figure 15. Specific Luminous Intensity vs. Forward Current
10
I v rel - Relative Luminous Intensity
1000
I F - Forward Current ( mA )
1.6
Green
100
t p /T = 0.001
t p = 10 µs
10
1
Green
1
0.1
0.1
0
95 10034
2
4
6
8
V F - Forward Voltage ( V )
Figure 13. Forward Current vs. Forward Voltage
Document Number 83124
Rev. 1.4, 31-Aug-04
1
10
95 10037
10
100
I F - Forward Current ( mA )
Figure 16. Relative Luminous Intensity vs. Forward Current
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TDSG / O / Y11..
VISHAY
Vishay Semiconductors
IVrel - Relative Luminous Intensity
1.2
Green
1.0
10
9
8
0.8
7
6
a
0.6
b
f
g
0.4
e
0.2
c
DP
d
0
520
540
560
580
600
e
d
A(C)
c
DP
b
a
A(C)
g
f
620
λ - Wavelength
( nm )
95 10038
1
2
3
4
5
6
7
8
9
10
1
2
3
4
96 11677
5
Figure 17. Relative Intensity vs. Wavelength
Package Dimensions in mm
95 11342
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Document Number 83124
Rev. 1.4, 31-Aug-04
TDSG / O / Y11..
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83124
Rev. 1.4, 31-Aug-04
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TDSG / O / Y11..
VISHAY
Vishay Semiconductors
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Document Number 83124
Rev. 1.4, 31-Aug-04