TDSG / O / Y11.. VISHAY Vishay Semiconductors Standard 7- Segment Display 7 mm Description The TDS.11.. series are 7 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 3 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast. All displays are categorized in luminous intensity groups. That allows users to assemble displays with uniform appearence. Typical applications include instruments, panel meters, point-of-sale terminals and household equipment. e4 Pb 19235 Pb-free Features Applications • • • • • • • • Panel meters Test- and measure- equipment Point-of-sale terminals Control units Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Yellow and green categorized for color Wide viewing angle Suitable for DC and high peak current Lead-free device Parts Table Part Color, Luminous Intensity Circuitry TDSO1150 Orange red Common anode TDSO1160 Orange red Common cathode TDSY1150 Yellow Common anode TDSG1150 Green Common anode TDSG1160 Green Common cathode Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TDSO1150/1160 , TDSY1150 , TDSG1150/1160 Parameter Test condition Part Symbol Value Unit VR 6 V IF 17 mA TDSO1160 IF 17 mA TDSY1150 IF 17 mA TDSG1150 IF 17 mA TDSG1160 IF 17 mA Reverse voltage per segment or DP DC forward current per segment or DP Document Number 83124 Rev. 1.4, 31-Aug-04 TDSO1150 www.vishay.com 1 TDSG / O / Y11.. VISHAY Vishay Semiconductors Parameter Surge forward current per segment or DP Power dissipation Test condition tp ≤ 10 µs (non repetitive) Part Symbol Value Unit TDSO1150 IFSM 0.15 A TDSO1160 IFSM 0.15 A TDSY1150 IFSM 0.15 A TDSG1150 IFSM 0.15 A TDSG1160 IFSM 0.15 A PV 400 mW Tj 100 °C Tamb -40 to + 85 °C Tstg -40 to + 85 °C Tsd 260 °C RthJA 140 K/W Tamb ≤ 45°C Junction temperature Operating temperature range Storage temperature range Soldering temperature t ≤ 3 sec, 2mm below seating plane Thermal resistance LED junction/ambient Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Orange red TDSO1150/1160 Parameter Test condition Luminous intensity per segment IF = 10 mA (digit average) Symbol Min IV 450 612 Typ. Max Unit µcd 1) Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 630 nm Angle of half intensity IF = 10 mA ϕ ±50 deg Forward voltage per segment or DP IF = 20 mA VF 2 Reverse voltage per segment or DP IR = 10 µA VR 1) 625 6 15 Symbol Min Typ. IV 450 581 3 nm V V IVmin and IV groups are mean Yellow TDSY1150 Parameter Test condition Luminous intensity per segment IF = 10 mA Max Unit µcd (digit average) 1) Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 585 594 Angle of half intensity IF = 10 mA ϕ ±50 Forward voltage per segment or DP IF = 20 mA VF 2.4 Reverse voltage per segment or DP IR = 10 µA VR 1) 15 deg 3 V V IVmin and IV groups are mean www.vishay.com 2 6 nm nm Document Number 83124 Rev. 1.4, 31-Aug-04 TDSG / O / Y11.. VISHAY Vishay Semiconductors Green TDSG1150/1160 Parameter Test condition Luminous intensity per segment IF = 10 mA Symbol Min IV 450 562 Typ. Max Unit µcd (digit average) 1) Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 565 Angle of half intensity IF = 10 mA ϕ ±50 Forward voltage per segment or DP IF = 20 mA VF 2.4 Reverse voltage per segment or DP IR = 10 µA VR 1) 575 6 nm nm deg 3 V 15 V IVmin and IV groups are mean Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10 ° I V rel - Relative Luminous Intensity 0° PV - Power Dissipation ( mW ) 500 400 300 200 100 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0 20 40 60 80 Tamb - Ambient Temperature (° C ) 95 11479 Red 100 10 1 t p /T = 0.001 t p = 10 µs 95 10086 2 4 6 8 0.2 0.4 0.6 Red 1.2 0.8 0.4 I F = 10 mA 0 Figure 2. Forward Current vs. Forward Voltage Rev. 1.4, 31-Aug-04 0 1.6 10 V F - Forward Voltage ( V ) Document Number 83124 0.2 Figure 3. Rel. Luminous Intensity vs. Angular Displacement I v rel - Relative Luminous Intensity I F - Forward Current ( mA ) 1000 0 0.4 95 10082 Figure 1. Power Dissipation vs. Ambient Temperature 0.1 0.6 100 0 95 10087 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) Figure 4. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 3 TDSG / O / Y11.. VISHAY Vishay Semiconductors 1000 Red I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 2.4 2.0 1.6 1.2 0.8 0.4 Yellow 100 t p /T = 0.001 t p = 10 µs 10 1 I FAV = 10 mA, const. 0.1 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 95 10088 tp /T 0 8 10 Figure 8. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 6 1.6 10 Red 1 0.1 Yellow 1.2 0.8 0.4 I F = 10 mA 0 0.01 1 10 100 I F - Forward Current ( mA ) 95 10089 0 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) 95 10031 Figure 6. Relative Luminous Intensity vs. Forward Current Figure 9. Rel. Luminous Intensity vs. Ambient Temperature 2.4 I v rel - Relative Luminous Intensity 1.2 I v rel - Relative Luminous Intensity 4 V F - Forward Voltage ( V ) 95 10030 Figure 5. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Red 1.0 0.8 0.6 0.4 0.2 0 590 Yellow 2.0 1.6 1.2 0.8 0.4 0 610 630 650 670 690 λ - Wavelength ( nm ) 95 10090 Figure 7. Relative Intensity vs. Wavelength www.vishay.com 4 2 95 10260 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 10. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Document Number 83124 Rev. 1.4, 31-Aug-04 TDSG / O / Y11.. VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 10 Yellow 1 0.1 10 1.2 0.8 0.4 I F = 10 mA 100 I F - Forward Current ( mA ) 95 10033 0 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) 95 10035 Figure 11. Relative Luminous Intensity vs. Forward Current Figure 14. Rel. Luminous Intensity vs. Ambient Temperature 1.2 2.4 Yellow I v rel - Specific Luminous Intensity IVrel - Relative Luminous Intensity Green 0 0.01 1 1.0 0.8 0.6 0.4 0.2 0 550 Green 2.0 1.6 1.2 0.8 0.4 0 570 590 610 630 650 λ - Wavelength ( nm ) 95 10039 10 1 95 10263 Figure 12. Relative Intensity vs. Wavelength 20 0.5 50 0.2 100 0.1 200 0.05 500 IF(mA) 0.02 tp/T Figure 15. Specific Luminous Intensity vs. Forward Current 10 I v rel - Relative Luminous Intensity 1000 I F - Forward Current ( mA ) 1.6 Green 100 t p /T = 0.001 t p = 10 µs 10 1 Green 1 0.1 0.1 0 95 10034 2 4 6 8 V F - Forward Voltage ( V ) Figure 13. Forward Current vs. Forward Voltage Document Number 83124 Rev. 1.4, 31-Aug-04 1 10 95 10037 10 100 I F - Forward Current ( mA ) Figure 16. Relative Luminous Intensity vs. Forward Current www.vishay.com 5 TDSG / O / Y11.. VISHAY Vishay Semiconductors IVrel - Relative Luminous Intensity 1.2 Green 1.0 10 9 8 0.8 7 6 a 0.6 b f g 0.4 e 0.2 c DP d 0 520 540 560 580 600 e d A(C) c DP b a A(C) g f 620 λ - Wavelength ( nm ) 95 10038 1 2 3 4 5 6 7 8 9 10 1 2 3 4 96 11677 5 Figure 17. Relative Intensity vs. Wavelength Package Dimensions in mm 95 11342 www.vishay.com 6 Document Number 83124 Rev. 1.4, 31-Aug-04 TDSG / O / Y11.. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83124 Rev. 1.4, 31-Aug-04 www.vishay.com 7 TDSG / O / Y11.. VISHAY Vishay Semiconductors www.vishay.com 8 Document Number 83124 Rev. 1.4, 31-Aug-04