TDSL11.. VISHAY Vishay Semiconductors Low Current 7 mm Seven Segment Display Description The TDSL11.0 series are 7 mm character seven segment low current LED displays in a very compact package. The displays are designed for a viewing distance up to 3 meters and available in high efficiency red. The grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast. All displays are categorized in luminous intensity groups. That allows users to assemble displays with uniform appearence. Typical applications include instruments, panel meters, point-of-sale terminals and household equipment. Features • • • • • • • • Low power consumption Suitable for DC and multiplex operation Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Wide viewing angle Lead-free device e4 Pb 19235 Pb-free Applications Panel meters Test- and measure- equipment Point-of-sale terminals Control units Parts Table Part Color, Luminous Intensity Remarks TDSL1150 Red Common anode TDSL1160 Red Common cathode Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TDSL1150 / TDSL1160 Symbol Value Reverse voltage per segment Parameter Test condition VR 6 V DC forward current per segment IF 15 mA IFM 45 mA IFSM 106 mA PV 320 mW Tj 100 °C Peak forward current per segment Surge forward current per segment tp ≤ 10 µs (non repetitive) Power dissipation Tamb ≤ 45 °C Junction temperature Document Number 83121 Rev. 1.4, 31-Aug-04 Unit www.vishay.com 1 TDSL11.. VISHAY Vishay Semiconductors Symbol Value Unit Operating temperature range Parameter Test condition Tamb -40 to + 85 °C Storage temperature range Tstg -40 to + 85 °C Tsd 260 °C RthJA 180 K/W t ≤ 3 sec, 2 mm below seating plane Soldering temperature Thermal resistance LED junction/ambient Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TDSL1150 / TDSL1160 Parameter Typ. Max IF = 2 mA Test condition VF 1.8 2.4 V IF = 20 mA VF 2.7 3 V Reverse voltage per segment IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj Forward voltage per segment Symbol Luminous intensity per segment IF = 2 mA (digit average) 1) IV IF = 5 mA IV Min 6 180 Unit 20 V 30 pF 260 µcd 1000 µcd µcd IF = 20 mA, tp/T = 0.25 IV Dominant wavelength IF = 2 mA λd Peak wavelength IF = 2 mA λp 635 nm Angle of half intensity IF = 2 mA ϕ ± 50 deg 1) 1300 612 625 nm IVmin and IV groups are mean values of segments a to g Typical Characteristics (Tamb = 25 °C unless otherwise specified) 30 IF – Forward Current ( mA) PV – Power Dissipation ( mW ) 500 400 300 200 100 0 95 11483 20 15 10 5 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) www.vishay.com 0 100 Figure 1. Power Dissipation vs. Ambient Temperature 2 25 0 95 11484 20 40 60 80 100 Tamb – Ambient Temperature (°C ) Figure 2. Forward Current vs. Ambient Temperature for AlInGaP Document Number 83121 Rev. 1.4, 31-Aug-04 TDSL11.. VISHAY Vishay Semiconductors 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 2.4 I V re l - Relative Luminous Intensity I V rel - Relative Luminous Intensity 0° 0.8 0.4 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 100 I V re l - Relative Luminous Intensity 100 I F - Forward Current ( mA ) 1.2 95 10321 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Red 10 1 t p /T= 0.001 tp = 10 µs 0.1 0 1 2 3 4 Red 10 1 0.1 0.01 0.1 5 V F - Forward Voltage ( V ) 95 10050 1 10 100 I F - Forward Current ( mA ) 95 10061 Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Luminous Intensity vs. Forward Current 1.2 2.0 I V re l - Relative Luminous Intensity I vrel - Relative Luminous Intensity 1.6 0.6 95 10082 Red 1.6 1.2 0.8 0.4 I F = 2 mA 0 0 95 10051 Red 2.0 20 40 60 80 100 T amb - Ambient Temperature ( °C ) Figure 5. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83121 Rev. 1.4, 31-Aug-04 Red 1.0 0.8 0.6 0.4 0.2 0 590 95 10040 610 630 650 670 690 λ -ı Wavelength ( nm ) Figure 8. Relative Intensity vs. Wavelength www.vishay.com 3 TDSL11.. VISHAY Vishay Semiconductors 10 9 8 7 6 a b f g e c DP d 1 2 3 4 1 2 3 4 5 6 7 8 9 10 5 e d A(C) c DP b a A(C) g f 96 11677 Package Dimensions in mm 95 11342 www.vishay.com 4 Document Number 83121 Rev. 1.4, 31-Aug-04 TDSL11.. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83121 Rev. 1.4, 31-Aug-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1