U2759B IF Signal Processing for DAB Description The U2759B is a bipolar integrated IF signal processing circuit. It is designed for DAB (Digital Audio Broadcasting) applications. Features D High linearity of the complete circuit D 3-stage gain controlled wideband amplifier D Internal AGC loops D AGC time constants and thresholds adjustable D Mixer: double balanced high current Gilbert Cell Block Diagram DC 9144 11 IF1IN IF1IN 16 6 IF2OUT 1 7 AGCPRE 3 THRPRE 2 Bandgap 14 NC VS 4 GND 15 8 LO 9 LO 5 10 12 AGCT THRIF VREF 13 GND BG Figure 1. Ordering and Package Information Extended Type Number U2759B-A U2759B-AFL U2759B-AFLG3 TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 Package DIP16 SO24 SO24 Remarks Taping according ICE-286-3 1 (9) Preliminary Information U2759B Pin Description IF1IN 1 16 IF1IN 2 15 GND THRPRE AGCPRE 3 14 VS GND 4 13 BG 5 12 VREF AGCT IF2OUT 6 NC 7 LO 8 11 DC 10 THRIF 9 LO 12585 Pin 1 2 3 4 5 Symbol IF1IN THRPRE AGCPRE GND AGCT 6 7 8 9 10 11 12 13 14 15 16 IF2OUT NC LO LO THRIF DC VREF BG VS GND IF1IN Pin 1 2 3 4 5 6 Symbol IF1IN THRPRE NC AGCPRE GND AGCT 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 NC IF2OUT NC NC NC LO LO NC NC THRIF DC VREF BG VS NC NC GND IF1IN Function IF1 input AGC-threshold for pre-amplifier AGC for pre-amplifier Ground AGC time constant for IF amplifier IF2 output Not connected Local oscillator Local oscillator AGC-threshold for IF amplifier DC-level Reference voltage Bandgap Supply voltage Ground IF1 input Figure 2. Pinning DIP16 IF1IN 1 24 IF1IN THRPRE 2 23 GND 3 22 NC AGCPRE 4 21 NC GND 5 20 VS AGCT 6 19 BG NC 7 18 VREF IF2OUT 8 17 DC NC 9 16 THRIF NC NC 10 15 NC NC 11 14 NC 13 LO LO 12 12584 Figure 3. Pinning SO24 2 (9) Preliminary Information Function IF1 input AGC-threshold for pre-amplifier Not connected AGC for pre-amplifier Ground AGC time constant for IF amplifier Not connected IF2 output Not connected Not connected Not connected Local oscillator Local oscillator Not connected Not connected AGC threshold for IF amplifier DC-level Reference voltage Bandgap Supply voltage Not connected Not connected Ground IF1 input TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 U2759B Pin Description for DIP16 IF1IN AGCPRE The input voltage is fed via Pins 1 and 16 to the first stage of the 3 stage gain-controlled wide-band amplifier. The first stage has an internal dc voltage supply with an internal resistance of 2 kW to connect the SAW filters directly. Pin 3 is an open-collector output. Depending on the input level, a control voltage can be generated for the external pre-stage by using an external voltage divider. This prevents an overdrive of input IF1. The threshold for activation of the open-collector output is adjusted with Pin 2. 1 1.2 kW 9229 1.2 kW 16 3 3 kW 3 kW 9227 Figure 4. THRPRE The control of a pre-stage can be adjusted at Pin 2 by using an external potentiometer switched against ground. With increasing voltage at Pin 2, control of the (external) prestage does not become active until there is a high input level at IF1. If Pin 2 is not connected, the control only becomes active if the input is overdriven. Figure 6. IF2OUT The product of input signal IF1 and the oscillator frequency (Pins 8 and 9) can be found at Pin 6. Here it concerns the emitter follower output with integrated current sink. The output voltage IF2 is twice as high as the difference between the voltage at Pin 10 and Pin 11. 6 3 kW 2 2 kW 9242 9228 Figure 5. TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 Figure 7. 3 (9) Preliminary Information U2759B LO AGCT The externally generated oscillator frequency is supplied via crosspoint capacitances at Pin 8 and /or Pin 9. If the oscillator frequency is not symmetrically connected, each open pin has to be blocked against ground. The control voltage for the wide–band amplifier is generated by using the external capacitor at Pin 5. By integration of the control current generated in the IC, there is a high control voltage if there is a large input level at IF1 and a low control voltage if there is a low input level. 8 9 5.6 kW 50 W 5.6 kW 5 9230 9243 Figure 10. Figure 8. THRIF The control threshold for the AGC is adjusted by using an external voltage. DC The dc mean value of the output signal is adjusted by using an external voltage at Pin 11. The voltage at Pin 11 always has to be higher than the voltage at Pin 10. 5 kW 11 10 9245 9244 Figure 9. Figure 11. 4 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 U2759B VREF Functional Description A stabilized voltage is available at Pin 12 on to which an external voltage divider for supplying Pin 10 and Pin 11 can be connected. The U2759B consists of a controllable wideband amplifier, a mixer and AGC-block. At Pin 13, the internally generated temperature stable reference voltage is blocked against ground. This voltage must not be loaded by external circuitry. The input voltage Vif1 is applied at Pin 1 and 16 and it is fed via a 3-stage controlled wideband amplifier to the mixer. The oscillator voltage can be applied symmetrically as well as unsymmetrically. More information concerning the parameters: Noise ratio of all ICs: Typically 11.2 dB (SSB) Intercept point 3rd order: Typically 58 dB (2 Vss at Pin 6) 13 The mixed signal is used in order to generate the AGCvoltage. The mixed signal therefore is fed to a comparator which charges or discharges an external capacitor dependent on the signal level. The threshold of the comparator can be adjusted externally. The generated voltage controls the wideband amplifier. The generated control voltage can be used also for an additional external preamplifier. This AGC protects the IF1 input against overload. The amplitude as well as the superimposed DC-level of the output voltage VIF2 can be adjusted by an external voltage. VREF is therefore available at Pin 12 (max. 500 mA). 12 4.5 V Upper limiting threshold DC-level (Pin 11) VP (Pin 6) IF AGC threshold (Pin 10) 9246 1.7 V Lower limiting threshold Figure 12. 12586 Figure 13. Adjustment of output level TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 5 (9) Preliminary Information U2759B Absolute Maximum Ratings Reference point Pin 4, unless otherwise specified Parameters Supply voltage Supply current Pin 14 Output current Pin 6 Max. power dissipation Junction temperature Ambient temperature range Storage temperature range Symbol VS IS IOUT P Tj Tamb Tstg Value 10 55 5.0 550 +125 –40 to +85 –40 to +125 Unit V mA mA mW °C °C °C Symbol RthJA RthJA Value 60 60 Unit K/W K/W Thermal Resistance Parameters Junction ambient Junction ambient DIP16 SO24 Electrical Characteristics Tamb = 25°C, VS = 8 V, reference point Pin 4, unless otherwise specified Parameters DC-supply Supply voltage Supply current IF-amplifier Input sensitivity Input impedance Input capacitance IF-AGC IF gain control range AGC capacitor Preamp-AGC Available -AGC current IF2 output IF2-Signal bandwidth (–3dB) Lower limiting threshold Upper limiting threshold Signal adjustm. DC level (external) Reference voltage Available current Test Conditions / Pins Pin 14 Pin 1 to 16 2 Vpp at Pin 6 Symbol Min. Typ. Max. Unit VS IS 6.8 8.0 45 10.0 55 V mA 80 1.2 2 120 mVrms Vin Rin Cin kW pF Pin 5 GV C5 60 66 4.7 dB mF 4 mA Pin 3 I3 Pin 6 B 12 DVlim1 DVlim2 MHz 1.7 4.5 V V Pin 10,11,12 Pin 12 Pin 12 V11 Vref I(Vref) 2 6 (9) Preliminary Information 4 5.2 500 V V mA TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 U2759B Application Circuit VRef (500 mA max) VS 22 mF DC level 5.5 kW AGC threshold 2.5 kW 5 kW Bandgap 4.7 mF 100 nF 10 nF Local oscillator 16 15 14 13 12 11 10 9 6 7 8 U2759B IF1 in 1 2 10 kW 3 4 5 4.7 mF 22 mF Threshold pre-amplifier AGC 9 kW n.c. Local oscillator AGC time constant 3 kW 10 nF VS Pre-amplifier AGC IF 2 out 12577 Figure 14. TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 7 (9) Preliminary Information U2759B Dimensions in mm Package DIP16 7.82 7.42 20.0 max 4.8 max 0.5 min 6.4 max 3.3 1.64 1.44 0.58 0.48 0.39 max 9.75 8.15 2.54 17.78 16 15 14 13 12 11 10 9 technical drawings according to DIN specifications 13015 1 Package SO24 2 3 4 5 6 7 8 9.15 8.65 15.55. 15.30 7.5 7.3 2.35 0.25 1.27 0.4 13.97 0.25 0.10 10.50 10.20 technical drawings according to DIN specifications 1 8 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 U2759B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A1, 06-Sep-96 9 (9) Preliminary Information