TEMIC U2759B

U2759B
IF Signal Processing for DAB
Description
The U2759B is a bipolar integrated IF signal processing circuit. It is designed for DAB (Digital Audio Broadcasting)
applications.
Features
D High linearity of the complete circuit
D 3-stage gain controlled wideband amplifier
D Internal AGC loops
D AGC time constants and thresholds adjustable
D Mixer: double balanced high current Gilbert Cell
Block Diagram
DC
9144
11
IF1IN
IF1IN
16
6 IF2OUT
1
7
AGCPRE
3
THRPRE
2
Bandgap
14
NC
VS
4
GND
15
8
LO
9
LO
5
10
12
AGCT
THRIF
VREF
13
GND
BG
Figure 1.
Ordering and Package Information
Extended Type Number
U2759B-A
U2759B-AFL
U2759B-AFLG3
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
Package
DIP16
SO24
SO24
Remarks
Taping according ICE-286-3
1 (9)
Preliminary Information
U2759B
Pin Description
IF1IN 1
16 IF1IN
2
15 GND
THRPRE
AGCPRE 3
14 VS
GND
4
13 BG
5
12 VREF
AGCT
IF2OUT 6
NC
7
LO
8
11 DC
10 THRIF
9
LO
12585
Pin
1
2
3
4
5
Symbol
IF1IN
THRPRE
AGCPRE
GND
AGCT
6
7
8
9
10
11
12
13
14
15
16
IF2OUT
NC
LO
LO
THRIF
DC
VREF
BG
VS
GND
IF1IN
Pin
1
2
3
4
5
6
Symbol
IF1IN
THRPRE
NC
AGCPRE
GND
AGCT
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
NC
IF2OUT
NC
NC
NC
LO
LO
NC
NC
THRIF
DC
VREF
BG
VS
NC
NC
GND
IF1IN
Function
IF1 input
AGC-threshold for pre-amplifier
AGC for pre-amplifier
Ground
AGC time constant for
IF amplifier
IF2 output
Not connected
Local oscillator
Local oscillator
AGC-threshold for IF amplifier
DC-level
Reference voltage
Bandgap
Supply voltage
Ground
IF1 input
Figure 2. Pinning DIP16
IF1IN 1
24 IF1IN
THRPRE 2
23 GND
3
22 NC
AGCPRE 4
21 NC
GND
5
20 VS
AGCT
6
19 BG
NC
7
18 VREF
IF2OUT
8
17 DC
NC
9
16 THRIF
NC
NC 10
15
NC
NC 11
14
NC
13 LO
LO 12
12584
Figure 3. Pinning SO24
2 (9)
Preliminary Information
Function
IF1 input
AGC-threshold for pre-amplifier
Not connected
AGC for pre-amplifier
Ground
AGC time constant for
IF amplifier
Not connected
IF2 output
Not connected
Not connected
Not connected
Local oscillator
Local oscillator
Not connected
Not connected
AGC threshold for IF amplifier
DC-level
Reference voltage
Bandgap
Supply voltage
Not connected
Not connected
Ground
IF1 input
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
U2759B
Pin Description for DIP16
IF1IN
AGCPRE
The input voltage is fed via Pins 1 and 16 to the first stage
of the 3 stage gain-controlled wide-band amplifier. The
first stage has an internal dc voltage supply with an
internal resistance of 2 kW to connect the SAW filters
directly.
Pin 3 is an open-collector output. Depending on the input
level, a control voltage can be generated for the external
pre-stage by using an external voltage divider. This
prevents an overdrive of input IF1. The threshold for
activation of the open-collector output is adjusted with
Pin 2.
1
1.2 kW
9229
1.2 kW
16
3
3 kW
3 kW
9227
Figure 4.
THRPRE
The control of a pre-stage can be adjusted at Pin 2 by using
an external potentiometer switched against ground. With
increasing voltage at Pin 2, control of the (external) prestage does not become active until there is a high input
level at IF1. If Pin 2 is not connected, the control only
becomes active if the input is overdriven.
Figure 6.
IF2OUT
The product of input signal IF1 and the oscillator
frequency (Pins 8 and 9) can be found at Pin 6. Here it
concerns the emitter follower output with integrated
current sink. The output voltage IF2 is twice as high as the
difference between the voltage at Pin 10 and Pin 11.
6
3 kW
2
2 kW
9242
9228
Figure 5.
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
Figure 7.
3 (9)
Preliminary Information
U2759B
LO
AGCT
The externally generated oscillator frequency is supplied
via crosspoint capacitances at Pin 8 and /or Pin 9. If the
oscillator frequency is not symmetrically connected, each
open pin has to be blocked against ground.
The control voltage for the wide–band amplifier is
generated by using the external capacitor at Pin 5. By
integration of the control current generated in the IC,
there is a high control voltage if there is a large input level
at IF1 and a low control voltage if there is a low input
level.
8
9
5.6 kW
50 W
5.6 kW
5
9230
9243
Figure 10.
Figure 8.
THRIF
The control threshold for the AGC is adjusted by using an
external voltage.
DC
The dc mean value of the output signal is adjusted by
using an external voltage at Pin 11. The voltage at Pin 11
always has to be higher than the voltage at Pin 10.
5 kW
11
10
9245
9244
Figure 9.
Figure 11.
4 (9)
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
U2759B
VREF
Functional Description
A stabilized voltage is available at Pin 12 on to which an
external voltage divider for supplying Pin 10 and Pin 11
can be connected.
The U2759B consists of a controllable wideband amplifier, a mixer and AGC-block.
At Pin 13, the internally generated temperature stable
reference voltage is blocked against ground. This voltage
must not be loaded by external circuitry.
The input voltage Vif1 is applied at Pin 1 and 16 and it is
fed via a 3-stage controlled wideband amplifier to the
mixer. The oscillator voltage can be applied symmetrically as well as unsymmetrically.
More information concerning the parameters:
Noise ratio of all ICs:
Typically 11.2 dB (SSB)
Intercept point 3rd order:
Typically 58 dB (2 Vss at Pin 6)
13
The mixed signal is used in order to generate the AGCvoltage. The mixed signal therefore is fed to a comparator
which charges or discharges an external capacitor dependent on the signal level. The threshold of the comparator
can be adjusted externally. The generated voltage controls the wideband amplifier.
The generated control voltage can be used also for an
additional external preamplifier. This AGC protects the
IF1 input against overload.
The amplitude as well as the superimposed DC-level of
the output voltage VIF2 can be adjusted by an external
voltage. VREF is therefore available at Pin 12 (max.
500 mA).
12
4.5 V
Upper limiting threshold
DC-level
(Pin 11)
VP (Pin 6)
IF AGC threshold
(Pin 10)
9246
1.7 V
Lower limiting threshold
Figure 12.
12586
Figure 13. Adjustment of output level
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
5 (9)
Preliminary Information
U2759B
Absolute Maximum Ratings
Reference point Pin 4, unless otherwise specified
Parameters
Supply voltage
Supply current
Pin 14
Output current
Pin 6
Max. power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
VS
IS
IOUT
P
Tj
Tamb
Tstg
Value
10
55
5.0
550
+125
–40 to +85
–40 to +125
Unit
V
mA
mA
mW
°C
°C
°C
Symbol
RthJA
RthJA
Value
60
60
Unit
K/W
K/W
Thermal Resistance
Parameters
Junction ambient
Junction ambient
DIP16
SO24
Electrical Characteristics
Tamb = 25°C, VS = 8 V, reference point Pin 4, unless otherwise specified
Parameters
DC-supply
Supply voltage
Supply current
IF-amplifier
Input sensitivity
Input impedance
Input capacitance
IF-AGC
IF gain control range
AGC capacitor
Preamp-AGC
Available -AGC current
IF2 output
IF2-Signal bandwidth
(–3dB)
Lower limiting threshold
Upper limiting threshold
Signal adjustm.
DC level (external)
Reference voltage
Available current
Test Conditions / Pins
Pin 14
Pin 1 to 16
2 Vpp at Pin 6
Symbol
Min.
Typ.
Max.
Unit
VS
IS
6.8
8.0
45
10.0
55
V
mA
80
1.2
2
120
mVrms
Vin
Rin
Cin
kW
pF
Pin 5
GV
C5
60
66
4.7
dB
mF
4
mA
Pin 3
I3
Pin 6
B
12
DVlim1
DVlim2
MHz
1.7
4.5
V
V
Pin 10,11,12
Pin 12
Pin 12
V11
Vref
I(Vref)
2
6 (9)
Preliminary Information
4
5.2
500
V
V
mA
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
U2759B
Application Circuit
VRef
(500 mA max)
VS
22 mF
DC
level
5.5 kW
AGC
threshold
2.5 kW
5 kW
Bandgap
4.7 mF
100 nF
10 nF
Local
oscillator
16
15
14
13
12
11
10
9
6
7
8
U2759B
IF1 in
1
2
10 kW
3
4
5
4.7 mF
22 mF
Threshold
pre-amplifier
AGC
9 kW
n.c.
Local
oscillator
AGC
time
constant
3 kW
10 nF
VS
Pre-amplifier
AGC
IF 2
out
12577
Figure 14.
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
7 (9)
Preliminary Information
U2759B
Dimensions in mm
Package DIP16
7.82
7.42
20.0 max
4.8 max
0.5 min
6.4 max
3.3
1.64
1.44
0.58
0.48
0.39 max
9.75
8.15
2.54
17.78
16
15
14
13
12
11
10
9
technical drawings
according to DIN
specifications
13015
1
Package SO24
2
3
4
5
6
7
8
9.15
8.65
15.55.
15.30
7.5
7.3
2.35
0.25
1.27
0.4
13.97
0.25
0.10
10.50
10.20
technical drawings
according to DIN
specifications
1
8 (9)
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
U2759B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
9 (9)
Preliminary Information