TFDS3000 Integrated Infrared Transceiver Module IrDA (SIR) Description The TFDS3000 is an infrared transceiver for data communication systems. The transceiver is compatible to the IrDA standard which allows data rates up to 115 kB/s. An internal AGC (Automatic Gain Control) ensures proper operation under EMI conditions. Features D D D D D D D D Compatible to IrDA standard SMD side view Low profile (height = 5.6 mm max.) Microcomputer compatible No external components Low power consumption Wide supply voltage range (3 to 5.5 V) AGC for EMI immunity Pin description: 1: IRED cathode 2: Rxd (output) 3: VCC (supply voltage) 4: Ground 5: NC *) 6: **) 7: Txd (input) 8: IRED anode Guide pins internally connected to ground *) **) optional sensitivity control for OEMs only shut-down, not for new development Vcc 95 11227 3 Driver 2 Amplifier Rxd Comparator 8 6 SD 7 Control logic Driver 1 Txd 4 GND Figure 1. Block diagram TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 1 (10) Preliminary Information TFDS3000 Absolute Maximum Ratings Reference point Pin 4, unless otherwise specified Parameter Supply voltage range Input currents Output sinking current Power dissipation Junction temperature Ambient temperature range (operating) Storage temperature range Soldering temperature Test Conditions Symbol VCC Value –0.5 to 6 10 25 200 125 0 to70 Unit V mA mA mW °C °C Tstg –25 to +85 230 (typ. 215) °C _C IIRED(DC) IIRED(RP) IIRED(PK) VIREDA VTxd VRxd 100 500 1 –0.5 to VCC +0.5 –0.5 to VCC +0.5 –0.5 to VCC +0.5 mA mA A V V V All pins, exept 8:see IRED See figure 3 Ptot Tj Tamb See figure 11 introductory text IrDA Design Guide Average IRED current Repetitive pulsed IRED current Peak IRED current IRED anode voltage Transmitter data input voltage Receiver data output voltage < 90 ms, ton < 20% < 2 ms, ton < 10% Basic Characteristics Tamb = 25_C, VCC = 5 V, unless otherwise specified Parameter Transceiver Supported data rates Supply voltage range reduced function down to 2.6 V Supply current Receiver Min. detection threshold irradiance **) Max. detection threshold irradiance **) Logic low receiver input irradiance Max. DC irradiance Output voltage Rxd Output voltage Rxd Output current Rise and fall time Rxd signal, electrical output pulse width Rxd signal, electrical output pulse width **) Test Conditions a = "15° a = "90° Symbol Min. Typ. Max. Unit VCC 2.4 3 5 115.2 5.5 kBit/s V IS 1.3 2.5 mA Eemin 0.025 0.035 W/m2 Eemax 3300 Eemaxlow a = "90° Active, C = 15 pF, R = 2.2 kW Non-active, C = 15 pF, R = 2.2 kW VOL < 0.5 V C = 15 pF, R = 2.2 kW C = 15 pF, R = 2.2 kW 2.4 kB/s 115.2 kB/s Eedcmax VOL 400 VOH VCC–0.5 W/m2 5000 0.5 0.004 W/m2 0.8 W/m2 V V 4 tr, tf mA 20 1 200 20 1 8 ns ms ms BER = 10–8 is target of IrDA specification, defined sensitivities not related to BER = 10–8 2 (10) Preliminary Information TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 TFDS3000 Parameter Output delay time (Rxd) Max. delay of leading edge of output signal related to leading edge of optical input signal Test Conditions Output level = 0.5 VCC @ Ee = 0.040 W/m2 Jitter, leading edge of output signal Output delay time (Rxd) Max. delay of trailing edge of output signal related to trailing edge of optical input signal Over a period of 10 bit, 115.2 kB/s Output level = 0.5 VCC Latency Recovery from last transmitted pulse to 1.1 threshold sensitivity Transmitter Supply voltage switching specs only cover 4.5 to 5.5 V Driver Current IRED Id can be adjusted by variation of RS Logic low transmitter input voltage Logic high transmitter input voltage Output radiant intensity = 15° " Angle of half intensity Peak wavelength of emission Halfwidth of emission spectrum Optical rise / fall time Output radiant intensity Overshoot, optical Rising edge peak-to-peak jitter Symbol Max. input current Iin < 100 A Current limiting resistor in series to IRED: RS = 10 , VCC = 5 V Typ. 1 Max. 2 tL 100 3 Id 0.3 800 s 5.5 V 0.5 A VIL(Txd) 0 0.8 V VIH(Txd) 2.4 VCC V 200 mW/sr 900 ° nm 40 p 60 "24 850 115.2 kHz square wave signal (1:1) Logic LOW level TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 6.5 870 60 Over a period of 10 bits, independent of information content Unit s s s 2 VCC Current limiting resistor in series to IRED: RS = 10 5V Min. 200 tj nm 600 ns 0.4 25 0.2 W/sr % s 3 (10) Preliminary Information TFDS3000 Recommended SMD Soldering Pads for TFDS3000 Dimensions in mm 11.75 5.08 2.54 2.54 8 7 6 5 1.8 1 +0.1 (2 ) 0.63 8.25 0.63 1 94 8731 1.0 2 2.54 3 4 2.54 5.08 Figure 2. Peak operating current ( mA ) 600 Current derating as a function of the maximum forward current of IRED, max. duty cycle 500 IF = 500 mA 400 IF = 400 mA 300 IF = 300 mA 200 100 IF = 100 mA 0 0 95 10103 20 40 60 80 100 120 140 Temperature ( °C ) v Figure 3. Current derating as a function of ambient temperature, condition: duty cycle 20% 4 (10) Preliminary Information TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 120 110 100 90 80 70 60 50 40 30 20 10 0 –60–50–40–30–20–10 0 10 20 30 40 50 60 96 11747 Angle (deg) Intensity (mW/sr) Relative output intensity (%) TFDS3000 120 110 100 90 80 70 60 50 40 30 20 10 0 Vcc = 5 V, Rs = 10 W Vcc=4V,Rs=10W Vcc = 3 V, Rs = 10 W 0 10 20 30 40 50 60 70 80 90 100 Temperature ( °C ) 96 11745 Figure 6. 120 110 100 90 80 70 60 50 40 30 20 10 0 –60–50–40–30–20–10 0 10 20 30 40 50 60 96 11748 Angle (deg) 30 Threshold irradiance (mW/m2) Relative sensitivity (%) Figure 4. 25 Vcc = 3 V 20 Vcc = 4 V 15 Vcc = 5 V 10 5 0 0 10 20 30 40 50 60 70 80 90 100 96 11746 Figure 5. TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 Temperature ( °C ) Figure 7. 5 (10) Preliminary Information TFDS3000 TFDS3000 Recommended Circuit Diagram VS R2 R3 TFDS3000 100 W 5W IRED Anode 8 Rxd Txd 7 3 VCC SD 6 4 GND NC 5 1 IRED Cathode 2 Rxd Txd 220 nF C3 C1 R4 2.2 kW 4.7 mF C2 220 nF GND 95 11800 Figure 8. Txd is recommended to be dc-coupled to the driving circuitry. R4 and C3 are only necessary if the input signal is active for longer periods. This might occur under certain conditions when the circuit is conncted to the NSC or SMC Super I/OsTM. See National Semiconductors application note. R3 is used for controlling the current through the IR emitter. To increase the output power, reduce the value. Pin 1 2 3 4 5 6 7 8 – Pin Name IRED cathode Rxd Vcc GND NC NC Txd IRED anode 2 guide pins To reduce the output power, increase the value as described in the TEMIC IrDA Design Guide. The load resistor R1 is optional when longer cables must be driven. Internally, RxD is connected to VCC by a 20 kW load. C1 and C2 are dependent on the quality of the supply voltage. A combination of 6.8 mF with 100 nF will also work in most cases. Description IRED cathode, internally connected to driver transistor Received data Supply voltage Ground No connection No connection Data to be transmitted IRED anode Internally connected to ground 6 (10) Preliminary Information I/O Active O LOW I HIGH TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 TFDS3000 Shape and Dimensions of Reel W1 N A 2.5 1.5 21.5 20.5 W2 12.90 12.75 95 10518 Figure 9. Shape and dimensions of reel TFDS3000 Version C1 Tape Width “W” 24 ± 1 TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 A 330 ± 1 N 100 ± 1.5 W1 24.4 (+2/–0) W2 max 30.4 7 (10) Preliminary Information TFDS3000 Dimensions of Tape 12402 Figure 10. Dimensions of tape TFDS3000 8 (10) Preliminary Information TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 TFDS3000 Dimensions in mm 96 11749 TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96 9 (10) Preliminary Information TFDS3000 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) Preliminary Information TELEFUNKEN Semiconductors Rev. A6, 15-Aug-96