TOSHIBA SSM3J15FU

SSM3J15FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
•
Small package
•
Low ON resistance
: Ron = 12 Ω (max) (@VGS = −4 V)
: Ron = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
−100
Pulse
IDP
−200
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation (Ta = 25°C)
mA
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-70
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2E1E
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006g(typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm × 3)
Marking
Equivalent Circuit (top view)
3
3
DQ
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
MIN.
TYP.
MAX.
UNIT
IGSS
VGS = ±16 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = −0.1 mA, VGS = 0
−30
⎯
⎯
V
IDSS
VDS = −30 V, VGS = 0
⎯
⎯
−1
μA
Gate leakage current
Drain-Source breakdown voltage
Test Condition
Drain cut-off current
Vth
VDS = −3 V, ID = −0.1 mA
−1.1
⎯
−1.7
V
Forward transfer admittance
⎪Yfs⎪
VDS = −3 V, ID = −10 mA
20
⎯
⎯
mS
Drain-Source ON resistance
RDS (ON)
ID = −10 mA, VGS = −4 V
⎯
8
12
ID = −1 mA, VGS = −2.5 V
⎯
14
32
⎯
9.1
⎯
pF
⎯
3.5
⎯
pF
⎯
8.6
⎯
pF
⎯
65
⎯
⎯
175
⎯
Gate threshold voltage
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
Turn-on time
ton
Turn-off time
toff
VDS = −3 V, VGS = 0, f = 1 MHz
VDD = −5 V, ID = −10 mA,
VGS = 0~−5 V
Ω
ns
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
10%
IN
50 Ω
−5V
10 μs
VDD
90%
−5 V
RL
(c) VOUT
VDD = −5 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage
than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
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ID - VGS
ID - VDS
-250
-1000
-7
-5
-150
-3.3
-100
-3.0
-2.7
-2.5
-50
0
-0.5
-1
-1.5
Drain-Source Voltage VDS(V)
-10
25°C
-1
-0.01
0
VGS=-2.5V
-4V
0
-1
-10
-100
Drain Current ID(mA)
-1000
18
Source Common
ID= -1mA
16
14
12
Ta=100°C
10
25°
8
6
4
2
-25°C
0
0
-2
-4
-6
-8
Gate-Source Voltage VGS (V)
RDS(ON) - Ta
-10
Vth - Ta
30
-2
Common Source
20
Common Source
ID=-0.1mA
VDS=-3V
-1.8
Gate threshold valtage Vth(V)
Drain-Source on resistance RDS(ON) (Ω)
-5
RDS(ON) - VGS
20
10
-1
-2
-3
-4
Gate-Source Voltage VGS(V)
20
Common Source
Ta=25°C
30
-25°C
-2
RDS(ON) - ID
40
Drain-Source on resistance RDS(ON) (Ω)
Ta=100°C
-0.1
VGS=-2.3V
0
Common Source
VDS=-3V
-100
-4
Drain-Source on resistance RDS(ON) (Ω)
Drain Current ID(mA)
-200
-10
Drain Current ID(mA)
Common Source
Ta=25°C
VGS=-2.5V,ID=-1mA
10
-4V,-10mA
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-25
0
25
50
75
100
125
0
150
-25
Ambient temperature Ta(°C)
0
25
50
75
100
125
150
Ambient temperature Ta(°C)
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|Yfs| - ID
IDR - VDS
-250
Common Source
VDS= -3V
Ta=25°C
Drain reveres current IDR (mA)
Forword transfer admittance
|Yfs| (mS)
1000
100
10
1
-200
-150
-100
-50
0
-1
-10
-100
Drain current ID (mA)
-1000
0
C - VDS
0.2
0.4
0.6
0.8
1
1.2
Drain-Source voltage VDS (V)
Switching Time t (ns)
Common Source
VGS=0V
f=1MHz
Ta=25°C
10
Ciss
Coss
toff
1000
100
1.4
t - ID
10000
100
Capacitance C (pF)
Common Source
VGS=0V
Ta=25°C
Common Source
VDD= -5V
VGS=0~-5V
Ta=25°C
tf
ton
tr
Crss
1
-0.1
-1
-10
Drain-Source voltage VDS (V)
10
-0.1
-100
-1
-10
Drain Current ID (mA)
-100
PD - Ta
Drain power dissipation Pd (mW)
250
mounted on FR4 board
(25.4mm×25.4mm×1.6t
Cu Pad:0.6mm2×3)
200
150
100
50
0
0
20
40
60
80
100 120
Ambient temperature Ta(°C)
140
160
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RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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