SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance : Ron = 8 Ω (max) (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V DC ID −100 Pulse IDP −200 PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation (Ta = 25°C) Note: 0.4 Unit 0.8±0.05 Rating 0.4 Symbol 0.8±0.05 1 2 3 mA Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.5±0.05 Characteristics 1.2±0.05 Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.32±0.05 • 0.13±0.05 Small package 0.22±0.05 • VESM 1. Gate 2. Source 3. Drain JEDEC ― JEITA ― TOSHIBA 2-1L1B Weight :1.5mg Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm × 3) 0.5mm 0.45mm 0.45mm 0.4mm Marking Equivalent Circuit (top view) 3 3 DT 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3J16FV Electrical Characteristics (Ta = 25°C) Characteristic Symbol MAX. UNIT ⎯ ⎯ ±1 μA V (BR) DSS ID = −0.1 mA, VGS = 0 −20 ⎯ ⎯ V IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshold voltage Forward transfer admittance Vth VDS = −3 V, ID = −0.1 mA −0.6 ⎯ −1.1 V ⎪Yfs⎪ VDS = −3 V, ID = −10 mA 25 ⎯ ⎯ mS ID = −10 mA, VGS = −4 V ⎯ 6 8 ID = −10 mA, VGS = −2.5 V ⎯ 8 12 ID = −1 mA, VGS = −1.5 V ⎯ 18 45 ⎯ 11 ⎯ pF ⎯ 3.7 ⎯ pF ⎯ 10 ⎯ pF ⎯ 130 ⎯ ⎯ 190 ⎯ RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time TYP. VGS = ±10 V, VDS = 0 Drain cut-off current Drain-Source on-resistance MIN. IGSS Gate leakage current Drain-Source breakdown voltage Test Condition Turn-on time ton Turn-off time toff VDS = −3 V, VGS = 0, f = 1 MHz VDD = −3 V, ID = − 10 mA, VGS = 0 ~ −2.5 V Ω ns Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN 50 Ω −2.5V 10 μs VDD 90% −2.5 V RL (c) VOUT VDD = −3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 2 2007-11-01 SSM3J16FV ID – VDS ID – VGS -250 -1000 -150 -2.7 (mA) -3 VDS = -3 V -2.5 ID -200 Common Source Ta = 25°C -4 Drain current Drain current ID (mA) Common Source -10 -2.3 -100 -2.1 -1.9 -50 -1.7 -100 Ta = 100°C -10 25°C −25°C -1 -0.1 VGS = -1.5 V 0 0 -0.5 -1 -1.5 -0.01 0 -2 -1 Drain - Source voltage VDS (V) -2 -3 Gate - Source voltage VGS (V) RDS (ON) – VGS RDS (ON) – ID 20 Common Source ID = -1 mA Drain – Source on-resistance RDS (ON) (Ω) Drain – Source on-resistance RDS (ON) (Ω) 1.8 25 VGS = -1.5 V 20 15 -2.5 V 10 5 -4 V 0 -1 -100 Drain current 1.6 1.4 1.2 10 8 Ta=100℃ 6 ID 0 -1000 -25℃ 0 -2 -4 RDS (ON) – Ta -1.8 Gate threshold voltage Vth (V) Drain – Source on-resistance RDS (ON) (Ω) Common Source 30 25 VGS =−1.5 V, ID=-1mA 15 -2.5 V, -10mA 10 5 0 −25 25 50 75 100 -1.6 Common Source ID = -0.1 mA VDS = -3 V -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 -4V, -10mA 0 -10 -8 Vth – Ta -2 20 -6 Gate - Source voltage VGS (V) (mA) 40 35 25℃ .4 2 -10 -4 125 0 −25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2007-11-01 SSM3J16FV ⎪Yfs⎪ – ID IDR – VDS -250 Common Source VDS =−3 V Ta = 25°C 500 300 Drain reverse current IDR (mA) Forward transfer admittance ( S) ⎪Yfs⎪ 1000 100 50 30 10 5 3 1 -1 -10 -100 -200 -150 Common Source VGS = 0 V Ta = 25°C D S -100 -50 0 0 -1000 IDR G 0.2 Drain current ID (mA) 0.4 0.6 1 1.2 1.4 Drain - Source VDS (V) t – ID c – VDS 200 10000 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 3000 100 10 Common Source VDD = -3 V VGS = 0~-2.5 V Ta = 25°C 5000 Switching time t (ns) Capacitance C (pF) 0.8 Ciss Coss toff 1000 500 tf 300 100 50 ton tr 30 Crss 1 -0.1 -1 -10 10 -0.1 -100 Drain - Source voltage VDS (V) -1 -10 -100 Drain current ID (mA) PD – Ta Power dissipation PD (mW) 250 Mounted on FR4 board (25.4mmX25.4mmX1.6t CU Pad:0.6mm2X3 200 150 100 50 0 0 20 40 60 周囲温度 80 Ta 100 120 140 160 (°C) 4 2007-11-01 SSM3J16FV RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01