TOSHIBA SSM6J207FE

SSM6J207FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J207FE
○ High-Speed Switching Applications
Unit: mm
•
4 V drive
•
Low ON-resistance:
Ron = 491 mΩ (max) (@VGS = −4 V)
Ron = 251 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
-30
V
Gate–source voltage
VGSS
± 20
V
DC
ID
-1.4
Pulse
IDP
-2.8
PD (Note 1)
500
Drain current
Drain power dissipation
A
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
1, 2, 5, 6 : Drain
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
ES6
3
: Gate
4
: Source
JEDEC
―
JEITA
―
2-2N1A
TOSHIBA
Weight: 3 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
V (BR) DSS
ID = −1 mA, VGS = 0
−30
⎯
⎯
V (BR) DSX
ID = −1 mA, VGS = + 20 V
−15
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS = −30 V, VGS = 0
⎯
⎯
−1
μA
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0
⎯
⎯
±1
μA
−1.2
⎯
−2.6
V
S
Vth
VDS = −5 V, ID = −1 mA
Forward transfer admittance
⏐Yfs⏐
VDS = −5 V, ID =− 0.65 A
(Note 2)
0.8
1.5
⎯
Drain–source ON-resistance
RDS (ON)
ID = −0.65 A, VGS = −10 V
(Note 2)
⎯
191
251
ID = −0.4 A, VGS = −4 V
(Note 2)
⎯
371
491
⎯
137
⎯
pF
Gate threshold voltage
Input capacitance
Ciss
VDS = −15 V, VGS = 0, f = 1 MHz
mΩ
Output capacitance
Coss
VDS = −15 V, VGS = 0, f = 1 MHz
⎯
39
⎯
pF
Reverse transfer capacitance
Crss
VDS = −15 V, VGS = 0, f = 1 MHz
⎯
20
⎯
pF
Switching time
Turn-on time
ton
VDD = −15 V, ID = −0.65 A,
⎯
15
⎯
Turn-off time
toff
VGS = 0 to −4 V, RG = 10 Ω
⎯
14
⎯
⎯
0.85
1.2
Drain–source forward voltage
VDSF
ID = 1.4 A, VGS = 0 V
(Note 2)
ns
V
Note 2: Pulse test
1
2007-11-01
SSM6J207FE
Switching Time Test Circuit
(a) Test circuit
(b) VIN
OUT
0
10%
IN
RG
−4 V
10 μs
(c) VOUT
VDD
Marking
90%
−4 V
RL
VDD = −15 V
RG = 10 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
6
0V
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
5
4
6
5
4
3
1
2
3
KT
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
SSM6J207FE
ID – VDS
ID – VGS
–3.0
–10
Common Source
VDS = −5 V
–6 V
(A)
(A)
–2.0
–1
ID
–4 V
–3.6 V
–1.5
VGS = –3.3 V
–1.0
–0.1
Drain current
Drain current
ID
–10 V
–2.5
Ta = 100 °C
25 °C
–0.01
−25 °C
–0.5
–0.001
Common Source
Ta = 25°C
0
0
–0.2
–0.4
–0.6
–0.8
Drain–source voltage
VDS
–0.0001
0
–1
(V)
–0.5
–1.0
–1.5
VGS
–3.5
–4.0
(V)
1000
ID = −0.65 A
900
Ta = 25°C
800
700
600
500
25 °C
400
Ta =100 °C
300
200
−25 °C
100
0
–2
–4
–6
Gate–source voltage
–8
VGS
Common Source
900
Common Source
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
–3.0
RDS (ON) – ID
RDS (ON) – VGS
800
700
600
500
VGS = – 4.0V
400
300
200
– 10 V
100
0
–10
0
–0.5
–1.0
(V)
RDS (ON) – Ta
–2.0
ID
–2.5
–3.0
(A)
Vth – Ta
–2.0
Vth (V)
Common Source
Gate threshold voltage
800
600
ID = −0.4 A
/ VGS = –4.0 V
400
200
0
−50
–1.5
Drain current
1000
Drain–source on-resistance
RDS (ON) (mΩ)
–2.5
Gate–source voltage
1000
0
–2.0
–0.65 A / –10 V
–1.5
–1.0
–0.5
Common source
VDS = −5 V
0
0
50
Ambient temperature
100
Ta
−50
150
(°C)
ID = −1 mA
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
SSM6J207FE
IDR – VDS
|Yfs| – ID
(S)
Common Source
(A)
Common Source
VDS = −5 V
1
Ta = 25°C
1
0.3
0.1
–0.01
–1
–0.1
Drain current
ID
Ta = 25°C
S
0.1
Ta = 100 °C
0.01
25 °C
0.001
−25 °C
0.0001
0
–10
IDR
G
Drain reverse current
3
D
VGS = 0 V
IDR
⎪Yfs⎪
Forward transfer admittance
10
10
0.2
(A)
0.4
0.6
Drain–source voltage
0.8
1.0
VDS
1.2
(V)
t – ID
C – VDS
600
1000
toff
(ns)
Switching time
Ciss
100
50
Coss
30
tf
10
ton
tr
Crss
10
–0.1
–1
–10
Drain–source voltage
1
–0.01
–100
VDS
–0.1
Drain current
(V)
–1
ID
–10
(A)
PD - Ta
1000
Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
Drain Power Dissipation PD (mW)
Capacitance
100
t
300
C
(pF)
500
800
600
400
200
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta (°C)
4
2007-11-01
SSM6J207FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01