MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in power supply – output rectification, power management, instrumentation Guardring for overvoltage protection High temperature soldering guaranteed: o 260 C/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-220AB molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% MBR Type Number Symbol 10H100CT Maximum Recurrent Peak Reverse Voltage VRRM 100 Maximum RMS Voltage VRMS 70 Maximum DC Blocking Voltage VDC 100 Maximum Average Forward Rectified Current O at Tc=125 C Peak Repetitive Forward Current (Rated VR, o Square Wave, 20KHz) at Tc=125 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: o (Note 2) IF=5A, TC=25 C o IF=5A, TC=125 C o IF=10A, TC=25 C o IF=10A, TC=125 C Maximum Instantaneous Reverse Current o @ Tc =25 C at Rated DC Blocking Voltage o (Note 2) @ Tc=125 C Voltage Rate of Change (Rated VR) Maximum Typical Thermal Resistance (Note 3) MBR 10H150CT 150 105 150 MBR 10H200CT 200 140 200 Units V V V I(AV) 10 A IFRM 32 A IFSM 120 A IRRM VF IR dV/dt RθJC 1.0 A 0.5 0.88 0.75 0.97 0.85 0.75 0.95 0.85 V 0.85 5 uA mA 1.0 10,000 V/uS o 1.5 C/W o Operating Junction Temperature Range -65 to +175 TJ C o Storage Temperature Range -65 to +175 TSTG C Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate. Version: A07 RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT) FIG.1- FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 180 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 12 10 8 6 4 2 Tj=Tj max. 8.3ms Single Half Sine-Wave JEDEC Method 150 120 90 60 30 0 0 0 25 50 75 100 125 o CASE TEMPERATURE. ( C) 150 1 175 FIG.3- TYPICAL FORWARD CHARACTERISTICS 100 10 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL REVERSE CHARACTERISTICS 5 Tj=25oC Pulse Width=300 s 1% Duty Cycle 1 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) 100 0 Tj=125 C 10 Tj=25 0C 5 1 Tj=125 0C 0.1 Tj=75 0C 0.01 0.001 Tj=25 0C 0.1 0.0001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG FIG.5- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) 5,000 Tj=25 0C f=1.0MHz Vsig=50mVp-p 1,000 500 100 0.1 1.0 10 REVERSE VOLTAGE. (V) 100 100 10.0 1 0.1 0.01 0.1 1 10 T, PULSE DURATION. (sec) Version: A07 100