TSC MBRF10H150CT

MBRF10H100CT - MBRF10H200CT
Isolated 10.0 AMPS. Schottky Barrier Rectifiers
Pb
RoHS
COMPLIANCE
ITO-220AB
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: ITO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum
Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBRF
Type Number
Symbol
10H100CT
Maximum Recurrent Peak Reverse Voltage
VRRM
100
Maximum RMS Voltage
VRMS
70
Maximum DC Blocking Voltage
VDC
100
Maximum Average Forward Rectified
o
Current at TC=125 C
Peak Repetitive Forward Current (Rated VR,
o
Square Wave, 20KHz) at Tc=133 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Peak Repetitive Reverse Surge Current
(Note 1)
Maximum Instantaneous Forward Voltage at
o
(Note 2)
IF= 5A, Tc=25 C
o
IF= 5A, Tc=125 C
o
IF=10A, Tc=25 C
o
IF=10A, Tc=125 C
Maximum Instantaneous Reverse Current
o
at Rated DC Blocking Voltage @Tc=25 C
o
@ Tc=125 C
Voltage Rate of Change, (Rated VR)
RMS Isolation Voltage (t=1.0 second, R.H.
o
≦30%, TA=25 C)
(Note 4)
(Note 5)
(Note 6)
Typical Thermal Resistance Per Leg (Note3)
MBRF
10H150CT
150
105
150
MBRF
10H200CT
200
140
200
Units
V
V
V
I(AV)
10
A
IFRM
10
A
120
A
IFSM
IRRM
VF
1.0
A
0.5
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
V
IR
5.0
1.0
uA
mA
dV/dt
10,000
V/uS
VISO
RθJC
4500
3500
1500
3.5
V
o
C/W
o
Operating Junction Temperature Range
-65 to +175
TJ
C
o
Storage Temperature Range
-65 to +175
TSTG
C
Notes:
1. 2.0 us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg.
4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip mounting (on case), where leads do overlap heatsink.
6. Screw mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”)
Version: A07
RATINGS AND CHARACTERISTIC CURVES (MBRF10H100CT - MBRF10H200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
180
RESISTIVE OR
INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
12
10
8
6
4
2
0
0
25
120
90
60
30
0
50
75
125
100
o
CASE TEMPERATURE. ( C)
150
175
0.1
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
5
1
40
Tj=125 0C
INSTANTANEOUS REVERSE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT. (A)
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
150
20
10
Tj=25 0C
4
2
1
Tj=125 0C
0.1
Tj=75 0C
0.01
0.001
0.4
Tj=25 0C
0
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0.2
0.1
0.6
0.7
0.8
1.1
0.9
1.0
FORWARD VOLTAGE. (V)
1.2
0.0001
0
60
80
100
120
140
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
100
TRANSIENT THERMAL IMPEDANCE. ( OC/W)
5,000
JUNCTION CAPACITANCE.(pF)
40
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
1,000
500
100
0.1
20
1.3
1
10
REVERSE VOLTAGE. (V)
100
10
1
0.1
0.01
0.1
1
10
T, PULSE DURATION. (sec)
Version: A07
100