KERSEMI MBRF2090CT

MBRF2035CT - MBRF20150CT
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum
Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Units
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
o
Maximum Average Forward Rectified Current at TC=135 C
Total device
Per Leg
Peak Repetitive Forward Current Per leg (Rated VR, Square
o
Wave, 20KHz) at Tc=135 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
o
IF=10A, Tc=25 C
IF=10A, Tc=125oC
o
IF=20A, Tc=25 C
o
IF=20A, Tc=125 C
o
Maximum Instantaneous Reverse Current @ Tc=25 C
o
at Rated DC Blocking Voltage
@ Tc=125 C
VRRM
VRMS
VDC
Voltage Rate of Change, (Rated VR)
Typical Junction Capacitance
RMS Isolation Voltage (MBRF Type Only) from Terminals to
Heatsink with t=1.0 Second, RH ≦30%
dV/dt
Typical Thermal Resistance Per Leg (Note 3)
2035
CT
35
24
35
2045
CT
45
31
45
2050
CT
50
35
50
2060
CT
60
42
60
IR
Cj
150
105
150
V
V
V
A
20
A
150
1.0
A
0.5
0.57
0.84
0.72
0.80
0.70
0.95
0.85
A
0.95
0.85
1.05
0.95
0.85
0.75
0.95
0.85
V
0.1
0.1
15
10
10,000
400
1.5
Operating Junction Temperature Range
TJ
-65 to +150
Storage Temperature Range
-65 to +175
TSTG
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate
4. Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip Mounting (on case), where leads do overlap heatsink.
6. Screw Mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”)
mA
5.0
V/uS
pF
310
4500 (Note 4)
3500 (Note 5)
1500 (Note 6)
VISO
RθJC
100
70
100
10
IFRM
VF
90
63
90
20
I(AV)
IFSM
IRRM
2090 20100 20150
CT
CT
CT
V
3.5
o
C/W
o
C
o
C
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RATINGS AND CHARACTERISTIC CURVES (MBRF2035CT THRU MBRF20150CT)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
150
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
20
RESISTIVE OR
INDUCTIVE LOAD
16
12
8
4
0
0
50
100
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
125
100
75
50
25
0
150
1
10
NUMBER OF CYCLES AT 60Hz
o
CASE TEMPERATURE. ( C)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
50
40
BR
F2
04
5C
T
Pulse Width=300 s
1% Duty Cycle
TM
10
RF
20
15
T
0C
RF
20
60
CT
MB
INSTANTANEOUS REVERSE CURRENT. (mA)
M
BR
F2
03
5C
Tj=25 0C
RF
CT
-M
20
BR
50
F2
01
CT
00
&
CT
MB
1
BR
F2
01
00
MB
0.1
M
INSTANTANEOUS FORWARD CURRENT. (A)
10
100
Tj=125 0C
1
Tj=75 0C
0.1
0.01
Tj=25 0C
MBRF2035CT-MBRF2045CT
MBRF2050CT-MBRF20150CT
0.01
0
0.1
0.2
0.5
0.3 0.4
0.001
0.6 0.7 0.8 0.9 1.0 1.1 1.2
TRANSIENT THERMAL IMPEDANCE, ( OC/W)
JUNCTION CAPACITANCE.(pF)
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
1,000
MBRF2035CT-MBRF2045CT
MBRF2050CT-MBRF20150CT
100
1
20
40
60
80
100
120
140
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
0.1
0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
10
REVERSE VOLTAGE. (V)
100
100
10
1
0.1
0.01
0.1
1
10
100
T, PULSE DURATION, sec.
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