UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 29 nC ) * Low reverse transfer Capacitance ( CRSS = typical 16pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness *Pb-free plating product number:7N60LL SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Normal Lead Free Plating 7N60L-x-TA3-T 7N60LL-x-TA3-T TO-220 7N60L-x-TF3-T 7N60LL-x-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 7 QW-R502-189.A 7N60L Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 7.4 A Continuous Drain Current ID 7.4 A Pulsed Drain Current (Note 1) IDM 29.6 A Single Pulsed (Note 2) EAS 600 mJ Avalanche Energy 14.2 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 142 W Power Dissipation PD TO-220F 81 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 7N60L-A 7N60L-B THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL TO-220 TO-220F TO-220 TO-220F θJA θJC RATINGS 62 62 0.88 1.54 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 7N60L-A 7N60L-B Drain-Source Leakage Current Gate- Source Leakage Current BVDSS TEST CONDITIONS VGS = 0V, ID = 250µA MIN TYP MAX UNIT 600 650 IDSS Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V ID = 250µA, △BVDSS/△TJ Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDS = VGS, ID = 250µA VGS = 10V, ID = 3.7A 1 100 -100 0.67 2.0 VDS=25V, VGS=0V, f=1.0 MHz 16 VDD =300V, ID =7.4A, RG =25Ω (Note 4, 5) VDS=480V, ID=7.4A, VGS=10 V (Note 4, 5) 29 7 14.5 V V µA nA nA V/℃ 4.0 1.2 V Ω 1400 180 21 pF pF pF 70 170 140 130 38 ns ns ns ns nC nC nC 2 of 7 QW-R502-189.A 7N60L Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/µs (Note 4) Reverse Recovery Charge QRR Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 22mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 320 2.4 1.4 V 7.4 A 29.6 A ns µC 3 of 7 QW-R502-189.A 7N60L Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-189.A 7N60L Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RG 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 7 QW-R502-189.A 7N60L TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Power MOSFET On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.5 101 VGS=10V 2.0 VGS=20V 1.5 1.0 100 0.5 *Note: TJ=25℃ 0 5 10 Capacitance (pF) 0.2 0.4 0.6 0.8 1.0 Source-Drain Voltage, VSD (V) Capacitance Characteristics Maximum Safe Operating Area 1800 CISS 1000 CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD COSS 800 CRSS 400 10-1 10-1 25 Drain Current, ID (A) 2000 0 20 15 100 *Notes: 1. VGS=0V 2. f = 1MHz 101 Drain-SourceVoltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 102 ID, Drain Current (A) 0.0 *Notes: 25℃ 1. VGS=0V 2. 250μs Pulse Test 150℃ 1.2 Operation in This Area is Limited by RDS(ON) 100μs 101 1ms 10ms 100 10-1 100 *Notes: 1. Tc=25℃ 2. TJ=150℃ 3. Single Pulse 101 DC 102 103 Drain-Source Voltage, VDS (V) 6 of 7 QW-R502-189.A 7N60L Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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