UTC-IC 88C42-AF5-R

UNISONIC TECHNOLOGIES CO.,
88CXX
CMOS IC
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR
3
2
1
DESCRIPTION
5
The UTC 88CXX series is a high-precision voltage detector
developed and foundry using CMOS process. The detection
voltage is fixed internally, with an accuracy of ±2.0%. The CMOS
output is available. Besides, 88CXX can easily delay a release
signal by attachment of an external capacitor with built-in delay
circuit.
FEATURES
4
SOT-25
*Pb-free plating product number: 88CXXL
* High-precision detection voltage: ±2.0%
* Hysteresis characteristics: 5% typ
* Ultra-low current consumption satisfied various detection voltage,
1.0μA typ. (VDD=2.0V) for ≤1.4V and 1.2μA typ. (VDD=3.5V) for
≥1.5V.
* Available detection voltage from 1.1~6.0V and step by 0.1V.
* Low operating voltage based on detection voltage, 0.8~6.0V for
for ≤1.4V and 0.95~10V for ≥1.5V.
* Delay time setting by an additional external capacitor.
PIN CONFIGURATION
PIN NO.
1
2
3
4
5
PIN NAME
OUT
VDD
VSS
NC
CD
ORDERING INFORMATION
Order Number
Lead Free
Normal
88CxxL-AF5-R
88Cxx-AF5-R
Package
Packing
SOT-25
Tape Reel
xx: Output Voltage, refer to Marking Information.
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Copyright © 2005 Unisonic Technologies Co.,
1
QW-R502-040,A
88CXX
CMOS IC
MARKING INFORMATION
PACKAGE
SOT-25
VOLTAGE CODE
36:3.6V
11:1.1V
37:3.7V
12:1.2V
38:3.8V
13:1.3V
39:3.9V
14:1.4V
40:4.0V
15:1.5V
41:4.1V
16:1.6V
42:4.2V
17:1.7V
43:4.3V
18:1.8V
44:4.4V
19:1.9V
45:4.5V
20:2.0V
46:4.6V
21:2.1V
47:4.7V
22:2.2V
48:4.8V
23:2.3V
49:4.9V
24:2.4V
50:5.0V
25:2.5V
51:5.1V
26:2.6V
52:5.2V
27:2.7V
53:5.3V
28:2.8V
54:5.4V
29:2.9V
55:5.5V
30:3.0V
56:5.6V
31:3.1V
57:5.7V
32:3.2V
58:5.8V
33:3.3V
59:5.9V
34:3.4V
60:6.0V
35:3.5V
UNISONIC TECHNOLOGIES CO., LTD
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MARKING
5
4
Space:Pb/Sn
L:Pb-free
CXXX
1
2
Voltage Code
3
2
QW-R502-040,A
88CXX
CMOS IC
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
≤1.4V
≥1.5V
Power Supply Voltage
CD terminal Input Voltage
Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
VDD-Vss
VCD
VOUT
IOUT
PD
TOPR
TSTG
RATINGS
8
12
UNIT
VSS-0.3 ~ VDD +0.3
VSS-0.3 ~ VDD+0.3
50
150
-40 ~ +85
-40 ~ +150
V
V
mA
mW
℃
℃
V
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.)
SYMBOL
TEST
CIRCUIT
Detection Voltage
-VDET
1
Hysteresis Width
VHYS
1
VDD
1
PARAMETER
Operating Voltage
Current
Consumption
≤1.4V
≥1.5V
1.1V ~ 1.4V
1.5V ~ 2.6V
2.7V ~ 3.9V
4.0V ~ 5.4V
5.5V ~ 6.0V
1.1V ~ 1.4V
1.5V ~ 2.6V
ISS
2
2.7V ~ 3.9V
3
4.0V ~ 5.4V
Output Current
Delay Time
5.5V ~ 6.0V
1.1V ~ 1.4V
1.5V ~ 2.6V
2.7V ~ 3.9V
4.0V ~ 5.4V
5.5V ~ 6.0V
1.1V ~ 1.4V
1.5V ~ 2.6V
2.7V ~ 3.9V
4.0V ~ 5.4V
5.5V ~ 6.0V
IOUT
4
td
5
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TEST CONDITIONS
VDD=2.0V
VDD=3.5V
VDD=4.5V
VDD=6.0V
VDD=7.5V
VDD=0.95V
VDD=1.20V
VDD=1.20V
Nch
VDD=2.40V
VDS=0.5V
VDD=1.20V
VDD=2.40V
VDD=1.20V
VDD=2.40V
VDD=4.8V
Pch(CMOS VDD=4.8V
output)
VDD=4.8V
VDS=0.5V
VDD=6.0V
VDD=8.4V
VDD=4.5V, CD=4.7nF
VDD=4.5V, CD=4.7nF
VDD=4.5V, CD=4.7nF
VDD=7.0V, CD=4.7nF
VDD=7.0V, CD=4.7nF
MIN
TYP
MAX
-VDET
-VDET
×0.98
-VDET -VDET
×0.03 ×0.05
0.8
0.95
1.0
1.2
1.3
1.5
1.6
0.03
0.25
0.23
0.50
0.23
0.50
1.60
3.70
0.23
0.50
1.60
3.70
0.23
0.50
1.60
3.70
0.36
0.62
0.36
0.62
0.36
0.62
0.46
0.75
0.59
0.96
4.95
6.6
4.95
6.6
4.95
6.6
3
4
3
4
-VDET
×1.02
-VDET
×0.08
6.0
10.0
2.5
3.0
3.3
3.8
4.2
UNIT
V
V
V
µA
mA
8.25
8.25
8.25
5
5
ms
3
QW-R502-040,A
88CXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
Temperature Characteristic of
-VDET
SYMBOL
∆-VDET
∆Ta
TEST
CIRCUIT
TEST CONDITIONS
1
-VDET =1.1V
-VDET =1.2V
-VDET =1.3V
-VDET =1.4V
-VDET =1.5V
-VDET =1.6V
-VDET =1.7V
-VDET =1.8V
-VDET =1.9V
-VDET =2.0V
-VDET =2.1V
-VDET =2.2V
-VDET =2.3V
-VDET =2.4V
-VDET =2.5V
-VDET =2.6V
-VDET =2.7V
-VDET =2.8V
-VDET =2.9V
-VDET =3.0V
-VDET =3.1V
-VDET =3.2V
-VDET=3.3V
-VDET =3.4V
-VDET =3.5V
-VDET =3.6V
-VDET =3.7V
-VDET =3.8V
-VDET =3.9V
-VDET=4.0V
-VDET=4.1V
-VDET=4.2V
-VDET=4.3V
-VDET=4.4V
-VDET=4.5V
-VDET=4.6V
-VDET=4.7V
-VDET=4.8V
-VDET=4.9V
-VDET=5.0V
-VDET=5.1V
-VDET=5.2V
-VDET=5.3V
-VDET=5.4V
-VDET=5.5V
-VDET=5.6V
-VDET=5.7V
-VDET=5.8V
-VDET=5.9V
-VDET=6.0V
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MIN
TYP
MAX
UNIT
±0.19
±0.20
±0.22
±0.24
±0.18
±0.19
±0.20
±0.21
±0.22
±0.24
±0.25
±0.26
±0.27
±0.28
±0.29
±0.31
±0.32
±0.33
±0.34
±0.35
±0.36
±0.38
±0.39
±0.40
±0.41
±0.42
±0.44
±0.45
±0.46
±0.47
±0.48
±0.49
±0.51
±0.52
±0.53
±0.54
±0.55
±0.56
±0.58
±0.59
±0.60
±0.61
±0.62
±0.64
±0.65
±0.66
±0.67
±0.68
±0.69
±0.71
±0.57
±0.60
±0.66
±0.72
±0.54
±0.57
±0.60
±0.63
±0.66
±0.72
±0.75
±0.78
±0.81
±0.84
±0.87
±0.93
±0.96
±0.99
±1.02
±1.05
±1.08
±1.14
±1.17
±1.20
±1.23
mV/℃
±1.26
±1.32
±1.35
±1.38
±1.41
±1.44
±1.47
±1.53
±1.56
±1.59
±1.62
±1.65
±1.68
±1.74
±1.77
±1.80
±1.83
±1.86
±1.92
±1.95
±1.98
±2.01
±2.04
±2.07
±2.13
4
QW-R502-040,A
88CXX
CMOS IC
DECTECTION VOLTAGE RANGE vs HYSTERESIS WIDTH
DETECTION VOLTAGE
RANGE (V)
1.1V±2.0%
1.2V±2.0%
1.3V±2.0%
1.4V±2.0%
1.5V±2.0%
1.6V±2.0%
1.7V±2.0%
1.8V±2.0%
1.9V±2.0%
2.0V±2.0%
2.1V±2.0%
2.2V±2.0%
2.3V±2.0%
2.4V±2.0%
2.5V±2.0%
2.6V±2.0%
2.7V±2.0%
2.8V±2.0%
2.9V±2.0%
3.0V±2.0%
3.1V±2.0%
3.2V±2.0%
3.3V±2.0%
3.4V±2.0%
3.5V±2.0%
HYSTERESIS WIDTH
VHYS TYP (V)
0.055
0.060
0.065
0.070
0.075
0.080
0.085
0.090
0.095
0.100
0.105
0.110
0.115
0.120
0.125
0.130
0.135
0.140
0.145
0.150
0.155
0.160
0.165
0.170
0.175
DETECTION VOLTAGE
RANGE (V)
3.6V±2.0%
3.7V±2.0%
3.8V±2.0%
3.9V±2.0%
4.0V±2.0%
4.1V±2.0%
4.2V±2.0%
4.3V±2.0%
4.4V±2.0%
4.5V±2.0%
4.6V±2.0%
4.7V±2.0%
4.8V±2.0%
4.9V±2.0%
5.0V±2.0%
5.1V±2.0%
5.2V±2.0%
5.3V±2.0%
5.4V±2.0%
5.5V±2.0%
5.6V±2.0%
5.7V±2.0%
5.8V±2.0%
5.9V±2.0%
6.0V±2.0%
HYSTERESIS WIDTH
VHYS TYP (V)
0.180
0.185
0.190
0.195
0.200
0.205
0.210
0.215
0.220
0.225
0.230
0.235
0.240
0.245
0.250
0.255
0.260
0.265
0.270
0.275
0.280
0.285
0.290
0.295
0.300
OUTPUT CONFIGURATIONS
Implementation
With different power supplies
With active low reset CPUs
With active high reset CPUs
With voltage divider variable resistors
CMOS
No
Yes
No
No
Example with one power supply
VDD
V/D
CMOS OUT
CPU
CD
Vss
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5
QW-R502-040,A
88CXX
CMOS IC
TEST CIRCUITS
(1)
ISS
(2)
VDD
VDD
VDD
88CXX
Series
Vss
OUT
OUT
88CXX
Series
VDD
CD
Vss CD
(3)
(4)
VDD
VDD
88CXX
Series
Vss
OUT
CD
VDD
IOUT
88CXX
Series
VDD
Vss
VDS
(5)
IOUT
OUT
CD
VDD+VDS
1µ
VIH
VDD
P.G.
88CXX
Series
Vss
Input Voltage
OUT
Oscilloscope
CD
VIL
td
Output Voltage
VDD ×90%
Vss
(a):VIH=6V, VIL=0.80V
(b):VIH=10V, VIL=0.95V
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6
QW-R502-040,A
88CXX
CMOS IC
TECHNICAL TERMS
1. Detection voltage (-VDET)
The detection voltage -VDET is the voltage at which the output switches to low. This detection voltage varies
slightly among products of the same type. The variation of voltages between the specified minimum [(-VDET)min.]
and maximum [(-VDET)max.] values is called the detection voltage range (See Figure 1).
Example: For the -VDET=1.5V, detection voltage lies in the range of 1.470≦(-VDET)≦1.530. This means that -VDET
is 1.470 in a product while -VDET is 1.530 in another of the same -VDET=1.5V.
2. Release voltage (+VDET)
The release voltage +VDET is the voltage at which the output returns (is “released”) to high. This release voltage
varies slightly among products of the same type. The variation of voltages between the specified minimum
[(+VDET)min.] and maximum [(+VDET)max.] values is called the release voltage range (See Figure 2).
Example: For the -VDET=1.5V, the release voltage lies in the range of 1.514≦(+VDET)≦1.652. This means that
+VDET is 1.514 in a product while +VDET is 1.652 in another of the same -VDET=1.5V.
Remark: Although the detection voltage and release voltage overlap in the range of 1.514 V ~ 1.530 V, +VDET
will always be larger than -VDET.
VD
Detection voltage
(-VDET)Max.
Voltage range Detection
(-VDET)Min.
VDD
Release voltage
(+VDET) Max.
(+VDET) Min.
Release voltage range
OUT
OUT
Figure 1
Figure 2 (C D=0F)
3. Hysteresis width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (B-A=VHYS in
Figure 7). By giving a device hysteresis, trouble such as noise at the input is avoided.
4. Delay time (td)
The delay time is a time that the input voltage to VDD terminal exceeds the release voltage (+VDET) and then the
output of the OUT terminal inverts. The delay time can be changed by the additional external capacitor CD.
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7
QW-R502-040,A
88CXX
CMOS IC
V
VDD
+VDET
OUT
td
Figure 3
5. Through-type current
Through-type current refers to the current which flows instantaneously, at the time of detection and release of a
voltage detector. Through-type current is large in CMOS output devices.
6. Oscillation
In applications where a resistor is connected to the voltage detector input , in the CMOS active low products for
example, the through-type current generated when the output goes from low to high (release) causes a voltage
drop equal to [through-type current]×[input resistance] across the resistor. When the resultant input voltage drops
below the detection voltage -VDET, the output voltage returns to its low level. In this state, the through-type current
and its resultant voltage drop have disappeared, and the output goes back from low to high. A through-type current
is again generated, a voltage drop appears, and the process repeats. This unstable condition is referred to as
oscillation.
STANDARD CIRCUIT
Connect directly the CD capacitor for delay between CD and Vss terminals
VDD
OUT
CD
Vss
Figure 5
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8
QW-R502-040,A
88CXX
CMOS IC
OPERATION
1. Basic operation: CMOS active low output
(1) When power supply voltage VDD is greater than the release voltage +VDET, the Nch transistor is OFF and the
Pch transistor ON, causing VDD (high) to appear at the output.
(2) When power supply voltage VDD goes below +VDET, the output maintains the power supply voltage level, as
long as VDD remains above the detection voltage -VDET. When VDD does fall below -VDET (A in Figure 7), the Nch
transistor goes ON the Pch transistor goes OFF, and VSS appears at the output.
(3) When VDD falls below the minimum operating voltage, the output becomes undefined. However, output will
revert to VDD if a pull-up has been employed.
(4) VSS will again be output when VDD rises above the minimum operating voltage. VSS will continue to be output
even when VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET.
(5) When VDD rises above +VDET (B in Figure 7), the Nch transistor goes OFF the Pch transistor goes ON, and VDD
appears at the output. Then VDD at the OUT terminal appears with delay time (td) due to delay circuit.
VDD
(1)
(2)
(3)
(4)
(5)
VDD
*
+
Min.operating voltage
OUT
Vss
*
CD
RB
Release voltage (+VDET)
Detection voltage (-VDET)
A
Pch
Delay
circuit
-
B
Hysteresis
width(VHYS)
RA
Nch
VREF
RC
N
VDD
CD *Parasitic diode
Vss
OUT terminal output
CD
Vss
td
Figure 6
Figure 7
2. Delay circuit
The delay circuit outputs the signal delayed from the release voltage (+VDET) point of the power voltage VDD
rising. The output signal is not delayed when the VDD goes down the detection voltage (-VDET) or less. (See Figure 7).
The delay time (td) is determined by the time constant of the built-in constant current (approx. 100nA in the case
of products with detection voltage of 1.5V or more, approx. 570nA in the case of products with detection voltage of
1.4V or less) and the attached external capacitor (CD), and calculated from the following formula.
td (ms) = Delay factor×CD (nF)
Delay factor: (25℃)
Products with detection voltage of 1.4V or less: Min.0.57, Typ.0.77, Max.0.96
Products with detection voltage of 1.5V or more: Min.3.8, Typ. 5.1, Max.6.4
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9
QW-R502-040,A
88CXX
CMOS IC
Cautions
*The open of CD terminal may cause double pulses shown in Figure 8 at release. If the double pulses cause a
trouble, attach 10pF or larger capacitor to the CD terminal. Do not apply the voltage to the CD terminal.
Time
Figure 8
*Layout the print circuit board not to apply or flow out the current to/from the CD terminal. Doing not so may cause
inaccurate delay time.
*Use an external capacitor, CD of which leakage current can be ignored for the built-in constant-current value. A
leakage current may cause an error of delay time. Also, a leakage current over the built-in constant-current
causes unrelease status.
3. Other characteristics
(1) Temperature characteristic of detection voltage.
The temperature characteristics of the detection voltage are expressed by the oblique line parts in Figure 9.
-VDET (V)
+0.54mV/℃
1.500
-0.54mV/℃
-40
25
85
Ta(℃)
Figure 9
(2) Temperature characteristics of release voltage
Δ+VDEF
The temperature factor (
) of the release voltage is calculated by the temperature factor of the
ΔTa
detection voltage as follows:
∆ + V DET
=
∆ Ta
+ VDET
- VDET
×
∆ - V DET
∆ Ta
The temperature factor of the release voltage has a same sign characteristics as the temperature factor of the
detection voltage.
(3) Temperature characteristics of hysteresis voltage
The temperature characteristics of hysteresis voltage (
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Δ+VDEF
ΔTa
Δ-VDEF
-
ΔTa
) is calculated as follows:
10
QW-R502-040,A
88CXX
∆ + V DET
∆ - V DET
=
∆ Ta
∆ Ta
CMOS IC
VHYS
∆ - V DET
×
-VDET
∆ Ta
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11
QW-R502-040,A
88CXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Current consumption – Input voltage
-VDET=1.4V
Current consumption, Iss (µA)
Ta=25℃
15µA
2.5
2.0
1.5
1.0
0.5
0.0
0
2
1
4
3
6
5
8
1.0
0.5
0.0
0
2
1
3
4
5
Ta=25℃
0.5
4
10
8
6
12
Input voltage, VDD (V)
7
6
-VDET=6.0V
1.0
2
1.5
-VDET=1.5V
1.5
0
2.0
Input voltage, VDD (V)
2.0
0.0
Ta=25℃
18µA
2.5
Input voltage, VDD (V)
3.4µA
2.5
7
Current consumption, Iss (µA)
Current consumption, Iss (µA)
Current consumption, Iss (µA)
-VDET=1.1V
12.9µA
8
Ta=25℃
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
Input voltage, VDD (V)
Pch transistor output current, I OUT (mA)
(2) Pch transistor output current - VDS
-VDET=1.5V
30
Ta=25℃
25
VDD=8.4V
20
VDD=7.2V
15
VDD=6.0V
10
VDD=4.8V
VDD=3.6V
5
0
VDD=2.4V
0
2
4
VDS (V)
6
8
10
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12
QW-R502-040,A
88CXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERICS (Cont.)
Pch transistor output current, IOUT (mA)
(3) Nch transistor output current (IOUT) – VDS
-VDET=6.0V
60
Ta=25℃
50
VDD=6.0V
40
VDD=4.8V
30
20
VDD=3.6V
10
0
VDD=2.4V
VDD=1.2V
1
0
3
2
4
5
VDS (V)
(4) Nch transistor output current – Input voltage
-VDET=1.4V
Ta=25℃
2
Ta=85℃
1.5
1
0.5
0
0.5
1
1.5
VDS=0.5V
Ta=-40℃
15
IOUT (mA)
Nch transistor output current
Ta=-40℃
2.5
0
-VDET=6.0V
20
VDS=0.5V
3
IOUT (mA)
Nch transistor output current
3.5
Ta=25℃
10
5
0
2
Ta=85℃
0
2
Input voltag VDD (V)
4
8
6
Input voltag VDD (V)
(5) Pch transistor output current– Input voltage
-VDET=6.0V
5.0
Ta=-40℃
2
Ta=25℃
1.5
1
Ta=85℃
0.5
0
0
1.0
1.5
2
2.5
Input voltage, VDD (V)
3
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VDS=0.5V
4.0
IOUT (mA)
Pch transistor output current,
VDS=0.5V
2.5
IOUT (mA)
Pch transistor output current,
-VDET=1.1V
3
Ta=-40℃
Ta=25℃
3.0
2.0
Ta=85℃
1.0
0.0
0
2
4
6
8
12
10
Input voltage, VDD (V)
13
QW-R502-040,A
88CXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERICS (Cont.)
(6) Dynamic response (CD : Open)
-VDET = 1.1V
Ta=25℃
tPHL
0.1
tPLH
0.01
0.001
0.0001
0.001
0.01
-VDET = 1.4V
1
Response time (ms)
Response time (ms)
1
Ta=25℃
tPHL
0.1
tPLH
0.01
0.001
0.0001
0.1
0.001
Load capacitance (μF)
0.1
-VDET = 1.5V
tPHL
tPLH
0.01
0.001
0.0001
0.1
0.001
0.01
Load capacitance (μF)
-VDET = 1.1V
1
Ta=25℃
Response time (ms)
Response time (ms)
1
0.01
Load capacitance (μF)
Ta=25℃
tPHL
0.1
tPLH
0.01
0.001
0.0001
0.1
0.001
0.01
Load capacitance (μF)
0.1
Response Time Measure Circuit
VDD
UTC
88CXX
VDD
OUT
V
Vs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
14
QW-R502-040,A
88CXX
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
CMOS IC
15
QW-R502-040,A
88CXX
CMOS IC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
16
QW-R502-040,A